Thin Films: Growth of Transparent and Conductive Polycrystalline (0001)-ZnO Films on Glass Substrates Under Low-Temperature Hydrothermal Conditions (Adv. Funct. Mater. 15/2012)

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.

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Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

Thin Solid Films ◽

10.1016/j.tsf.2005.08.258 ◽

2006 ◽

Vol 496 (1) ◽

pp. 112-116 ◽

Cited By ~ 154

Author(s):

A.N. Banerjee ◽

C.K. Ghosh ◽

K.K. Chattopadhyay ◽

Hideki Minoura ◽

Ajay K. Sarkar ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Zno Thin Films ◽

Glass Substrates ◽

Dc Sputtering ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Dc Sputtering Technique

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Effect of Solution Concentration in the Optical and Structural Properties of ZnO Thin Films

Diffusion Foundations ◽

10.4028/www.scientific.net/df.18.113 ◽

2018 ◽

Vol 18 ◽

pp. 113-117 ◽

Cited By ~ 1

Author(s):

Abdelkader Hafdallah ◽

Aimane Guedri ◽

Mohamed Salah Aida ◽

Nadhir Attaf

Keyword(s):

Thin Films ◽

Solution Concentration ◽

Zno Films ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

Glass Substrates ◽

Optical Band Gaps ◽

Optical Films ◽

Spray Technique ◽

Uv Visible

In the present work we prepared conducting and transparent thin films ZnO with different solution concentrations by pyrolysis spray technique on glass substrates. These films are obtained starting from solution of zinc acetate dehydrate [Zn(CH3COO)2.2H2O] dissolved in methanol, at substrate temperature fixed T =350°C with a concentration of solution vary from 0.05-0.2 M. Our interest is on the investigation of solution concentration on the structural and optical properties of these films. The X-ray diffraction (XRD) results showed that the synthesized ZnO films are polycrystalline with preferred orientation along the (002) plane. The optical films characterization was carried out by the UV-Visible transmission. The optical gap and films disorder were deduced from the absorption spectra, The values of optical band gaps vary between 3.24 and 3.43 eV.

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Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.773-774.739 ◽

2015 ◽

Vol 773-774 ◽

pp. 739-743

Author(s):

A.N. Afaah ◽

N.A.M. Asib ◽

Aadila Aziz ◽

Ruziana Mohamed ◽

Kevin Alvin Eswar ◽

...

Keyword(s):

Thin Films ◽

Raman Scattering ◽

Ultra Violet ◽

Peak Shift ◽

Zno Thin Films ◽

Zno Films ◽

Deposition Method ◽

Immersion Method ◽

Glass Substrates ◽

Doped Zno

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

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Microstructure and thermoelectric transport properties of BiCuSeO thin films on amorphous glass substrates

Dalton Transactions ◽

10.1039/c8dt02026d ◽

2018 ◽

Vol 47 (32) ◽

pp. 11091-11096

Author(s):

Dachao Yuan ◽

Shuang Guo ◽

Shuaihang Hou ◽

Yuejin Ma ◽

Jianjun Hao ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Transport Properties ◽

Structural Defects ◽

Thermoelectric Transport ◽

Glass Substrates ◽

Thermoelectric Transport Properties ◽

Amorphous Glass

Effect of structural defects on the low temperature thermoelectric transport properties of c-axis-textured BiCuSeO thin films on amorphous glass substrates.

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Structural and Optical Properties of Nickel-Doped and Undoped Zinc Oxide Thin Films Deposited by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.250 ◽

2014 ◽

Vol 895 ◽

pp. 250-253 ◽

Cited By ~ 2

Author(s):

Siti Hajar Basri ◽

Mohd Arif Mohd Sarjidan ◽

Wan Haliza Abd Majid

Keyword(s):

Thin Films ◽

Zinc Acetate ◽

Zinc Acetate Dihydrate ◽

Sol Gel ◽

Chelating Agent ◽

Zno Films ◽

Ni Doping ◽

Gel Method ◽

Sol Gel Method ◽

Glass Substrates

ZnO thin films with and without Ni-doping were successfully deposited by sol-gel method with zinc acetate dihydrate as inorganic precursor, and nickel (II) acetate tetrahydrate as dopant. The solutions were prepared by dissolving zinc acetate and nickel (II) acetate in ethanol and diethanolamine (DEA) as its chelating agent. Thin films were fabricated by using spin-coating method on glass substrates. ZnO films were obtained by pre-heating and post-heating at 300 °C for 10 minutes and 500 °C for 1 h respectively. The films were analyzed by X-ray diffraction (XRD), UV-Vis transmittance and photoluminescence (PL). All samples exhibit high transparency in visible. Ni dopant does not alter so much ZnO structure, which due to the ion substitution between Ni and Zn. However, the Ni tends to create a dopant energy interlayer in ZnO energy band gap which cause significant change in PL intensity.

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Development of ZnO/Ta2O5 heterojunction using low-temperature technological processes

MRS Proceedings ◽

10.1557/opl.2011.1434 ◽

2011 ◽

Vol 1287 ◽

Author(s):

R. Baca ◽

J. A. Andraca ◽

M. G. Arellano ◽

G. R. Paredes ◽

R. P. Sierra

Keyword(s):

Low Temperature ◽

Transient Response ◽

Rectangular Pulse ◽

Voltage Source ◽

Zno Films ◽

X Ray Diffraction ◽

Glass Substrates ◽

Air Atmosphere ◽

Current Voltage ◽

Potential Alternative

ABSTRACTZnO/Ta2O5 heterojunctions were formed on glass substrates using low temperature processes. Formerly insulating Ta2O5 films were deposited on glass substrates by vacuum evaporation using Ta2O5 powder, Afterwards transparent and conductive ZnO films were formed on the Ta2O5 films by thermal oxidation at 3200C in air atmosphere of zinc (Zn) films deposited by dc sputtering process. Structural and optical properties of ZnO were investigated by X-ray diffraction (XRD) and photoluminescence (PL). The Ta2O5 insulating films were characterized by Raman scattering. The ZnO/Ta2O5 heterojunction was characterized by current-voltage measurements at room temperature as well as transient response under a rectangular-pulse voltage source. The electrical and the transient response suggest that the ZnO/Ta2O5 heterojunction is a potential alternative for the fabrication of alternating-current-driven thin film electroluminescent (ACTFEL) devices.

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