Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

2006 ◽  
Vol 917 ◽  
Author(s):  
Karthik Ramani ◽  
Chad Robert Essary ◽  
Valentin Craciun ◽  
Rajiv K Singh
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Electrical Response ◽  
Ultra Violet ◽  
Oxide Thickness ◽  
Dielectric Thin Films ◽  
Nitrogen Doped ◽  
Ultra Violet Radiation

AbstractThe electrical response and interfacial layer characterization of nitrogen doped HfO2 gate dielectric thin films are reported. The films were processed at relatively low temperature (~ 400 0C) by pulsed laser deposition and ultra-violet radiation assisted oxidation technique. Nitrogen incorporation in the hafnia films led to O-N and Hf-Si-O-N bonding in the bulk and at hafnia-Si interface respectively. The nitrogen doped hafnia films exhibited a leakage current density lower than 10E-5 A/sq cm at -1 V and a simulated equivalent oxide thickness of 9.4 Å.

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

On-wafer characterization of thermomechanical properties of dielectric thin films by a bending beam technique

2000 ◽  
Vol 88 (5) ◽  
pp. 3029-3038 ◽  
Author(s):  
Jie-Hua Zhao ◽  
Todd Ryan ◽  
Paul S. Ho ◽  
Andrew J. McKerrow ◽  
Wei-Yan Shih
Keyword(s):  
Thin Films ◽  
Thermomechanical Properties ◽  
Dielectric Thin Films ◽  
Beam Technique

Mechanical characterization of low-k and barrier dielectric thin films

2005 ◽  
Vol 82 (3-4) ◽  
pp. 368-373 ◽  
Author(s):  
N. Chérault ◽  
G. Carlotti ◽  
N. Casanova ◽  
P. Gergaud ◽  
C. Goldberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Characterization ◽  
Dielectric Thin Films ◽  
Low K

Two-step interfacial reaction of HfO2 high-k gate dielectric thin films on Si

2004 ◽  
Vol 30 (7) ◽  
pp. 1267-1270 ◽  
Author(s):  
P.F. Lee ◽  
J.Y. Dai ◽  
H.L.W. Chan ◽  
C.L. Choy
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Gate Dielectric ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Gate Dielectric

High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer

2003 ◽  
Vol 77 (5) ◽  
pp. 721-724 ◽  
Author(s):  
L. Yan ◽  
H.B. Lu ◽  
G.T. Tan ◽  
F. Chen ◽  
Y.L. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
High Quality ◽  
High K ◽  
High K Gate Dielectric

Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs

2015 ◽  
Vol 36 (12) ◽  
pp. 1355-1358 ◽  
Author(s):  
Maryam Olyaei ◽  
Eugenio Dentoni Litta ◽  
Per-Erik Hellstrom ◽  
Mikael Ostling ◽  
Bengt Gunnar Malm
Keyword(s):  
Interfacial Layer ◽  
Low Frequency ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Equivalent Oxide Thickness ◽  
Low Frequency Noise ◽  
Noise Characterization
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