Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

Chemical Vapor Deposition of ZrxTi1-xO and HfxTi1-xO Thin Films Using the Composite Anhydrous Nitrate Precursors

2006 ◽  
Vol 917 ◽  
Author(s):  
Qi-Yue Shao ◽  
Ai-Dong Li ◽  
Wen-Qi Zhang ◽  
Di Wu ◽  
Zhi-Guo Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Heating Time ◽  
Oxide Semiconductor ◽  
Molar Ratio ◽  
X Ray ◽  
The Individual

AbstractZr/Ti an Hf/Ti composite nitrate were developed as single-source precursors for deposition of multi-component metal oxide films. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) analyses confirmed that ZrxTi1-xO2 and HfxTi1-xO2 films were successfully prepared by the CVD technique from these composite precursors. The Zr/Ti nitrate can be taken as a solid solution of the individual Zr and Ti nitrate, and the Zr/Ti molar ratio in as-deposited ZrxTi1-xO2 films is nicely consistent with that of the precursor. The Hf/Ti nitrate appears to be a mixture of the Zr and Ti nitrates and the composition of the as-deposited HfxTi1-xO2 films depends remarkably on the heating time of precursor. Both ZrxTi1-xO2 and HfxTi1-xO2 films exhibit trading-off properties between band gap and dielectric constant, which suggesting that ZrxTi1-xO2 and HfxTi1-xO2 can be the promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the next generation complementary metal-oxide-semiconductor transistor (CMOS) devices.

Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

2009 ◽  
Vol 1155 ◽  
Author(s):  
Rahul Suri ◽  
Daniel J Lichtenwalner ◽  
Veena Misra
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
X Ray ◽  
Layer Deposition ◽  
Post Deposition ◽  
Gallium Oxides

AbstractThe interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of arsenic oxides at the HfAlO/GaAs interface after dielectric growth and post-deposition annealing at 500 °C. A minimal increase in the amount of gallium oxides at the interface was detected between the as-deposited and annealed conditions highlighting the effectiveness of HfAlO in suppressing gallium oxide formation. An equivalent oxide thickness (EOT) of ∼ 2 nm has been achieved with a gate leakage current density of less than 10-4 A/cm2. These results testify a good dielectric interface with minimal interfacial oxides and open up potential for further investigation of HfAlO/GaAs gate stack properties to determine its viability for n-channel MOSFETs.

scholarly journals Plasma Supported Deposition of Amorphous Hydrogenated Carbon (a-C:H) on Polyamide 6: Determining Interlayer Completion and Dehydrogenation Effects during Layer Growth

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1886
Author(s):  
Torben Schlebrowski ◽  
Henriette Lüber ◽  
Lucas Beucher ◽  
Melanie Fritz ◽  
Youssef Benjillali ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Polyamide 6 ◽  
Carbon Layer ◽  
Layer Growth ◽  
Ex Situ ◽  
X Ray ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Diffuse Reflectance Infrared

Polyamide 6 (PA6) is a commonly used material in many different sectors of modern industry. Herein, PA6 samples were coated with amorphous carbon layers (a-C:H) with increasing thickness up to 2 µm using radio frequency plasma enhanced chemical vapor deposition for surface adjustment. The morphology of the carbon coatings was inspected by ex situ atomic force microscopy and scanning electron microscopy. Surface wettability was checked by contact angle measurements. The chemical composition was analyzed using the surface sensitive synchrotron X-ray-based techniques near-edge X-ray absorption fine structure and X-ray photoelectron spectroscopy, supported by diffuse reflectance infrared Fourier transform spectroscopy. Particular attention was paid to the coating interval from 0 to 100 nm, to specify the interlayer thickness between the PA6 polymer and a-C:H coating, and the region between 1000 and 2000 nm, where dehydrogenation of the a-C:H layer occurs. The interlayer is decisive for the linkage of the deposited carbon layer on the polymer: the more pronounced it is, the better the adhesion. The thickness of the interlayer could be narrowed down to 40 nm in all used methods, and the dehydrogenation process takes place at a layer thickness of 1500 nm.

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Synthesis and Characterization of Zn Oxide Hexagonal Nano-Pole Films on Quartz Glass Substrate

2009 ◽  
Vol 7 (1) ◽  
Author(s):  
Jie Chen ◽  
Jun Wang
Keyword(s):  
Growth Mechanism ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Sol Gel ◽  
Layer Growth ◽  
Layer By Layer ◽  
Quartz Glass Substrate ◽  
Wurtzite Phase ◽  
X Ray

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.

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