Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.457-460.845 ◽

2004 ◽

Vol 457-460 ◽

pp. 845-848 ◽

Author(s):

Amador Pérez-Tomás ◽

Dominique Tournier ◽

Josep Montserrat ◽

Narcis Mestres ◽

F. Sandiumenge ◽

...

Keyword(s):

Dielectric Film ◽

Electrical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521383 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A901 ◽

Author(s):

A. Gómez ◽

H. Castán ◽

H. García ◽

S. Dueñas ◽

L. Bailón ◽

...

Keyword(s):

Electrical Characterization ◽

Negative Resistance ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

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Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2011.05.055 ◽

2011 ◽

Vol 509 (31) ◽

pp. 8001-8007 ◽

Author(s):

V. Rajagopal Reddy ◽

M. Siva Pratap Reddy ◽

B. Prasanna Lakshmi ◽

A. Ashok Kumar

Keyword(s):

Electrical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6212 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6212-6215 ◽

Author(s):

Helena Castán ◽

Salvador Dueñas ◽

Juan Barbolla ◽

Estefanía Redondo ◽

Ignacio Mártil ◽

...

Keyword(s):

Nitrogen Content ◽

Electrical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

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Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication

Journal of Applied Physics ◽

10.1063/1.371774 ◽

1999 ◽

Vol 86 (12) ◽

pp. 6924-6930 ◽

Author(s):

R. Peláez ◽

E. Castán ◽

S. Dueñas ◽

J. Barbolla ◽

E. Redondo ◽

...

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electrical Characterization ◽

Electron Cyclotron ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90140-1 ◽

1986 ◽

Vol 29 (6) ◽

pp. 597-606 ◽

Author(s):

Sanjay Jain ◽

Walter E. Dahlke

Keyword(s):

Interface State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al[sub 2]O[sub 3] and ZnO for Transparent Thin Film Transistor Applications

Journal of The Electrochemical Society ◽

10.1149/1.3421680 ◽

2010 ◽

Vol 157 (7) ◽

pp. H727 ◽

Author(s):

Sung-Min Yoon ◽

Sang-Hee Ko Park ◽

Chun-Won Byun ◽

Shin-Hyuk Yang ◽

Chi-Sun Hwang

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Electrical Characterization ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Transparent Thin Film Transistor

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Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.366247 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4372-4377 ◽

Author(s):

I. Thurzo ◽

S. Teramura ◽

R. Durny ◽

V. Nádaždy ◽

M. Kumeda ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Transient Spectroscopy ◽

Charge Capacitance

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