Non-Contact Metrology for Electrical Characterization of Photo-Voltaic Materials

2006 ◽  
Vol 945 ◽  
Author(s):  
Michael Ira Current ◽  
Vladimir Faifer ◽  
Tim Wong ◽  
Wojtek Walecki ◽  
Tan Nguyen
Keyword(s):  
Electrical Characterization ◽  
Native Oxides ◽  
Beam Modulation ◽  
High Resolution Mapping ◽  
Surface Measurements ◽  
Resolution Mapping ◽  
Photo Voltaic ◽  
Penetration Depths ◽  
Made In

ABSTRACTA non-contact metrology for electrical characterization of p-n junctions has been developed for use on photo-voltaic materials. By analysis of junction photo-voltage (JPV) measurements at multiple light beam modulation frequencies and multiple light penetration depths, a comprehensive electrical analysis of photo-voltaic materials is provided for junction sheet resistance, leakage current, capacitance and bulk carrier diffusion length. The JPV analysis can be made with screen and native oxides on the surface, so no pre-measurement chemical etching is required. Since the probe does not contact the p-n junction surface, measurements can be made in a continuous fashion with the junction moving under the probe, providing a method for efficient high-resolution mapping of local electrical properties. The non-contact probing also allows for non-damaging measurements in both “hard” (Si) and “soft” (organic) photo-voltaic materials. Examples of p-n junction properties in polished, crystalline-Si and cast poly-Si will be discussed.

scholarly journals High-resolution mapping and characterization of xa42, a resistance gene against multiple Xanthomonas oryzae pv. oryzae races in rice (Oryza sativa L.)

2018 ◽  
Vol 68 (2) ◽  
pp. 188-199 ◽  
Author(s):  
Constantine Busungu ◽  
Satoru Taura ◽  
Jun-Ichi Sakagami ◽  
Toyoaki Anai ◽  
Katsuyuki Ichitani
Keyword(s):  
Oryza Sativa ◽  
High Resolution ◽  
Resistance Gene ◽  
Xanthomonas Oryzae ◽  
High Resolution Mapping ◽  
Resolution Mapping

Omvpe Growth and Characterization of GaAs on Si for Device Applications

1988 ◽  
Vol 116 ◽  
Author(s):  
S. K. Shastry ◽  
S. Zemon ◽  
C. Armiento ◽  
M. B. Stern ◽  
M. Levinson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Spectral Width ◽  
Growth Technique ◽  
Temperature Growth ◽  
Vanadium Doping ◽  
Device Applications ◽  
First Time ◽  
Made In

AbstractSignificant progress has been made in the OMVPE growth of GaAs directly on Si by the previously reported low-temperature growth technique. These films have been characterized by low-temperature PL, SIMS, TEM, and DLTS. The epitaxial layers, whose quality has been determined by PL measurements (4.2 K PL spectral width of heavy-hole exciton ≈ 3 meV), were implanted with 29Si+ for fabrication of MESFET channels. Background concentrations of ≈ 1014 cm−3 have been achieved for the first time after rapid thermal annealing without the need to use oxygen implantation or vanadium doping. SIMS measurements do not show Si pileup on the surface or much Si diffusion at the GaAs-Si interface, a significant improvement over earlier results. DLTS measurements and electrical characterization of the GaAs-Si heterojunction diode indicate the presence of only two trap levels (< 1014 cm−3 in concentration) in the GaAs ≥ 2.5 μm away from the interface.

Effect of Water on the Electrical Properties of Carbon Nanotubes

2008 ◽  
Vol 8 (12) ◽  
pp. 6523-6527
Author(s):  
D. Mendoza ◽  
P. Santiago
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Deposition ◽  
Electrical Characterization ◽  
Charge Carriers ◽  
Hysteretic Behavior ◽  
Water Molecules ◽  
Humid Environment ◽  
Chemical Deposition Method ◽  
Made In

In this work we present the electrical characterization of carbon nanotubes synthesized by a thermal chemical deposition method, using carbon disulfide as the precursor of carbon and iron as the catalyst. We found a broad maximum in the electrical resistance as a function of temperature between 275–300 K and a hysteretic behavior when the measurements were made in a humid environment. We propose that the water molecules act as traps for charge carriers, and the overall behavior of the observed phenomenon is discussed in terms of the confinement of water inside the carbon nanotubes.

scholarly journals Micro-probing enables high-resolution mapping of neuronal subpopulations using fMRI

2019 ◽  
Author(s):  
Joana Carvalho ◽  
Azzurra Invernizzi ◽  
Khazar Ahmadi ◽  
Michael B. Hoffmann ◽  
Remco J. Renken ◽  
...  
Keyword(s):  
A Priori ◽  
Neural Basis ◽  
Biologically Inspired ◽  
Fine Grained ◽  
Non Invasive ◽  
High Resolution Mapping ◽  
Cognitive Behaviour ◽  
Resolution Mapping ◽  
Health And Disease

AbstractThe characterization of receptive field (RF) properties is fundamental to understanding the neural basis of sensory and cognitive behaviour. The combination of non-invasive imaging, such as fMRI, with biologically inspired neural modeling has enabled the estimation of population RFs directly in humans. However, current approaches require making numerous a priori assumptions, so these cannot reveal unpredicted properties, such as fragmented RFs or subpopulations. This is a critical limitation in studies on adaptation, pathology or reorganization. Here, we introduce micro-probing (MP), a technique for fine-grained and assumption free characterisation of subpopulation RFs. Without specific stimuli or adapted models, MP mapped the bilateral RFs characteristic of observers with a congenital pathway disorder. Moreover, in healthy observers, MP revealed voxels that capture the activity of multiple neuronal subpopulations. Thus, MP provides a versatile framework to visualize, analyze and model, without restrictions, the diverse RFs of cortical subpopulations in health and disease.

Nanoscale dielectric measurements from electrostatic force microscopy

2014 ◽  
Vol 28 (24) ◽  
pp. 1430011 ◽  
Author(s):  
Bharat Kumar ◽  
Scott R. Crittenden
Keyword(s):  
Electrostatic Force ◽  
Electrical Characterization ◽  
Electrostatic Force Microscopy ◽  
Liquid Environment ◽  
Force Microscopy ◽  
Dielectric Characterization ◽  
High Lateral Resolution ◽  
Standard Tool ◽  
Made In

Electrostatic force microscopy has evolved as a standard tool for electrical characterization of surfaces with high lateral resolution. Key to its success is an accurate and informative model of the cantilever capacitance. In this brief review, we summarize the progress made in the dielectric characterization of surfaces using electrostatic force microscopy and discuss the development of various models to analytically describe the capacitive forces between the cantilever tip and sample. We include a discussion of the recent extension of these measurements to the liquid environment.

scholarly journals Characterization of Complex Atrial Tachycardia in Patients With Previous Atrial Interventions Using High-Resolution Mapping

2020 ◽  
Vol 6 (7) ◽  
pp. 815-826
Author(s):  
Nicolas Derval ◽  
Masateru Takigawa ◽  
Antonio Frontera ◽  
Saagar Mahida ◽  
Vlachos Konstantinos ◽  
...  
Keyword(s):  
High Resolution ◽  
Atrial Tachycardia ◽  
High Resolution Mapping ◽  
Resolution Mapping

scholarly journals Study of Morphology Wear Model of Moulds from Alloys of Aluminium EN AW-6082 in Injection Process

2013 ◽  
Vol 554-557 ◽  
pp. 844-849 ◽  
Author(s):  
Alejandro Pereira ◽  
Primo Hernández ◽  
Javier Martínez ◽  
José A. Pérez ◽  
Thomas Mathia
Keyword(s):  
Surface Characterization ◽  
Plastic Material ◽  
Wear Model ◽  
Experimental Procedure ◽  
Surface Parameters ◽  
Injection Process ◽  
Surface Measurements ◽  
Mould Cavity ◽  
Made In

The main objective of this research is study the wear of a mould, made in easy machining material; aluminium EN AW-6082 T4 and the surface characterization of mould cavity, used in a polymeric manufacturing process, after several injection cycles. To evaluate the effectiveness of this materials in the plastic injection process, a test part with different thicknesses and shapes was designed and some inserts of aluminium were made. In the way of plastic material, a 30 % fiberglass reinforced polyamide PA6 has been employed in the experimental procedure. A reusable injection mould was used and surface measurements of mould cavity have been performed after 9200 cycles. The surface topography has been measured by using optical interferometry profiling technology and there have also been obtained roughness and surface parameters according to ISO 25178 and EUR15178N. In order to surface characterization, different areas of the mould cavity with different geometries, has been analysed. The behaviour of wear rate has been analysed by the study of the evolution of the surface parameters and functional parameters in different points of the surface mould.

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