Characteristics of Chemically Deposited Thin Film Solar Cells using SnS and Sb2S3 Absorbers

2006 ◽  
Vol 974 ◽  
Author(s):  
M. T. Santhamma Nair ◽  
David Avellaneda ◽  
Sarah Messina ◽  
P. K. Nair
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Large Scale ◽  
Optical Band Gap ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Open Circuit ◽  
Published Data ◽  
Scale Production ◽  
Silver Paint

ABSTRACTWe use SnS and Sb2S3 thin films of about 500 nm in thickness deposited on glass substrates by chemical deposition to develop solar cell structures: glass-SnO2:F/CdS/SnS/CuS/silver paint and SnO2:F/CdS/Sb2(S/Se)3/PbS/silver paint. Here, SnS and Sb2S3, and PbS are absorber materials suitable for large scale production, considering their abundance at 0.2 ppm (Sb) and 2 ppm (Sn) and 8ppm (pb) in the earth's crust according to published data. SnS films deposited through distinct reaction routes have optical band gap of 1.1 eV or 1.7 eV. In SnO2:F/CdS/SnS(1.1eV)/SnS(1.7 eV)/CuS/silver paint, open circuit voltage (Voc) of ≈ 400 mV, and short circuit current (Jsc)of 7 mA/cm2 are obtained with a cell efficiency of 1%. Sb2S3 thin films have optical band gap 1.7 eV, but could be reduced through reaction in Se-vapor, upon which solid solutions of Sb2(S/Se)3 are formed. In SnO2:F/CdS/Sb2(S/Se)3/PbS/silver paint, Voc of ≈ 640 mV, Jsc of 7 mA/cm2 and conversion efficiency of 1.5% are obtained.

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

Advances in CZTS thin films and nanostructured

2015 ◽  
Vol 23 (2) ◽  
Author(s):  
N. Ali ◽  
R. Ahmed ◽  
Bakhtiar-Ul-Haq ◽  
A. Shaari
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Solar Spectrum ◽  
Nanostructured Material ◽  
Chemical Processes ◽  
Published Data ◽  
Copper Zinc ◽  
Czts Thin Films ◽  
Nanostructured Copper

AbstractAlready published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

Chemically and Electrochemically Deposited Thin Films of Tin Sulfide for Photovoltaic Structures

2009 ◽  
Vol 1165 ◽  
Author(s):  
Nini Rose Mathews
Keyword(s):  
Thin Films ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tin Sulfide ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Glass Substrates

AbstractThin films of tin sulfide (SnS) were deposited on TCO-coated glass substrates by pulse electrodeposition. Cyclic voltammetry showed that SnS deposition occurs in the -0.8 V to −1 V range. The films deposited using the potential pulses of -0.95V (Von) and +0.1V (Voff) are of orthorhombic crystal structure with lattice parameters and grain size similar to those of the thin films of orthorhombic structure obtained by chemical deposition. The optical band gap of the films was 1.3 eV. In CdS/SnS heterojunctions an open circuit voltage110 mV, short circuit current density 0.72 mA/cm2 and fill factor of 0.32 are reported here.

Influence of OVPD parameters on the performance of organic solar cells utilizing pentacene/PTCDI absorption layers

2012 ◽  
Vol 1390 ◽  
Author(s):  
S. Axmann ◽  
M. Brast ◽  
N. Wilck ◽  
H. Windgassen ◽  
M. Heuken ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Organic Solar Cells ◽  
Energy Demand ◽  
Large Scale ◽  
Short Circuit ◽  
Electrical Characterization ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Scale Production

ABSTRACTAs global energy demand is steadily growing, renewable energy generation by solar cells is becoming increasingly important. The use of mono- and polycrystalline silicon solar cells, which nowadays dominate the market, is limited by wafer size, rigidness of substrates and the requirement of large energy amounts for manufacturing. Organic solar cells (OSC) have the potential to overcome these limitations; especially organic vapor phase deposition (OVPD) technology offers the possibility of reproducible, large-scale production at low temperatures and on flexible substrates.We report on planar heterojunction OSC utilizing an active layer of pentacene/N, N’- ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide (PTCDI) fabricated by an Aixtron Gen-1 OVPD tool. The influence of substrate temperature was studied using atomic force microscopy (AFM) on single layers and bilayers. In addition electrical characterization with and without illumination of fully processed solar cells which utilize different cathode layers was carried out.AFM images indicate that crystallization of pentacene layers can be widely influenced by substrate temperature, a PTCDI-C13H27 layer atop of these covers the crystallites. Open-circuit voltage was found to be 0.47 V and short-circuit current densities beyond 0.8 mA/cm2 were measured under a spectrum close to AM 1.5 with 100 mW/cm2. Fill factors were determined to be as high as 44 %.

Heterojunction solar cells on flexible silicon wafers

MRS Advances ◽  
2016 ◽  
Vol 1 (15) ◽  
pp. 997-1002 ◽  
Author(s):  
André Augusto ◽  
Pradeep Balaji ◽  
Harsh Jain ◽  
Stanislau Y. Herasimenka ◽  
Stuart G. Bowden
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Short Circuit ◽  
Open Circuit ◽  
Additional Stress ◽  
Scale Production ◽  
Heterojunction Solar Cells ◽  
Cell Efficiency ◽  
Low Efficiency

ABSTRACTCurrent large-scale production of flexible solar devices delivers cells with low efficiency. In this paper we present an alternative path to organic or inorganic thin films. Our cells combine the remarkable surface passivation properties of the silicon heterojunction solar cells design, and the quality of n-type Cz wafers. The cells were manufactured on 50-70 µm-thick wafers. The cells have and efficiency of 17.8-19.2%, open-circuit voltages of 735-742 mV, short-circuit currents of 34.5-35.5 mA/cm2, and fill-factors of 72-75%. The cells are not as flexible as bare wafers. Thin cells are particular sensitive to the additional stress introduced by the busbars and the soldered ribbons. For radiuses of curvature over 8cm the cells efficiency remains the same, for radius equal to 6cm the cell efficiency drops less than 2%, and for radius equal to 4cm the drop is less than 3%. The broken fingers due to smaller bend radius lead to higher series resistance and subsequently lower field-factors.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Effect of Zn doping concentration on optical band gap of PbS thin films

2019 ◽  
Vol 792 ◽  
pp. 1000-1007 ◽  
Author(s):  
Mengting Liu ◽  
Qiuqiang Zhan ◽  
Wei Li ◽  
Rui Li ◽  
Qinyu He ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Zn Doping

scholarly journals Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Optoelectronic Applications
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