Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

AgSbSe2 thin films for photovoltaic structures produced through reaction of chemically deposited selenium thin films with Ag and Sb2S3

2004 ◽  
Vol 836 ◽  
Author(s):  
K. Bindu ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Band Gap ◽  
Solid State Reaction ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Illumination Intensity ◽  
P Type ◽  
Ag Film

ABSTRACTSelenium thin films (350 nm) deposited from a 0.01 M solution of Na2SeSO3 of pH 4.5 maintained at 10 °C for 13 h, have been used as a source of selenium vapour for reaction with vacuum deposited Ag thin film on chemically deposited Sb2S3+Ag layers. When a stack of Sb2S3+Ag is heated in contact with Se film, AgSbSe2 is formed through solid state reaction of Sb2S3 and Ag2Se. The latter is formed at 80°C through the reaction of Ag-film in Se-vapour. This thin film is photoconductive and p-type. The optical band gap is nearly 1 eV and dark conductivity, 10-3 Ω-1cm-1. This thin film has been incorporated to form a photovoltaic structure, SnO2:F-(n)CdS:In-(i)Sb2S3-(p)AgSbSe2-silver print. Voc> 400 mV and Jsc>12 mA/cm2 have been observed in this under an illumination intensity of 1 kWm-2.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

scholarly journals Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films

2007 ◽  
Vol 4 (2) ◽  
pp. 255-264 ◽  
Author(s):  
Benny Joseph ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Band Gap ◽  
Electron Micrographs ◽  
Optical Band Gap ◽  
Scanning Electron Micrographs ◽  
Nickel Phthalocyanine ◽  
Glass Substrates ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Nickel Phthalocyanine (NiPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

scholarly journals Effects of Sintering Atmosphere on the Optical, Thermal and Electrical Properties of Inkjet Printed ZnxCu(1-x)Fe2O4 Thin Films

2021 ◽  
Vol 81 (2) ◽  
pp. 25-35
Author(s):  
Lim Joon Hoong
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Optical Band Gap ◽  
Electronic Band Structure ◽  
Copper Ferrite ◽  
Electronic Band ◽  
Sintering Atmosphere ◽  
P Type

The effects of sintering atmosphere on the optical, thermal and electric properties of inkjet printed ZnxCu(1-x)Fe2O4 thin films have been investigated. The thin film samples were sintered separately in vacuum and oxygen. The obtained samples were then characterized by X-ray diffraction (XRD), optical band gap, electrical conductivity, Seebeck coefficient and thermal conductivity. XRD analysis showed that the fabricated samples have a cubic spinel structure of zinc copper ferrite regardless of the sintering atmosphere. The electrical conductivity of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen was about 5 % higher compared to ZnxCu(1-x)Fe2O4 thin films sintered in vacuum. The optical band gap shows that the samples sintered in oxygen had smaller band gap compared to samples sintered in vacuum. The electronic band structure simulated through ABINIT shows ZnxCu(1-x)Fe2O4 is an indirect band gap material. A smaller electronic band gap was observed in O2 rich condition and was in agreement with the optical band gap and electrical conductivity test results. Seebeck coefficient of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen remained positive , confirming charge transport by hole carries as p-type semiconductors. A change from p-type to n-type semiconductors was observed when ZnxCu(1-x)Fe2O4 thin films sintered in vacuum.

scholarly journals Conductivity and Density of States of New Polyphenylquinoline

Polymers ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 934 ◽  
Author(s):  
Shamil R. Saitov ◽  
Dmitriy V. Amasev ◽  
Alexey R. Tameev ◽  
Vladimir V. Malov ◽  
Marine G. Tedoradze ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Density Of States ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Localized States ◽  
Energy Distance ◽  
Temperature Dependences

Electrical, photoelectrical, and optical properties of thin films of a new heat-resistant polyphenylquinoline synthesized using facile methods were investigated. An analysis of the obtained temperature dependences of the dark conductivity and photoconductivity indicates the hopping mechanism of conductivity over localized states arranging at the energy distance of 0.8 eV from the Fermi level located inside the band gap of the investigated material. The optical band gap of the studied material was estimated from an analysis of the spectral dependences of the photoconductivity and absorption coefficient before (1.8–1.9 eV) and after (2.0–2.2 eV) annealing at temperatures exceeding 100 °C. The Gaussian character of the distribution of the localized states of density inside the band gap near the edges of the bands was established. A mechanism of changes in the optical band gap of the investigating polymer under its annealing is proposed.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

THE INFLUENCE OF CARBON AND BORON ATOMS ON THE OPTICAL AND ELECTRICAL PROPERTIES OF THIN FILM a-Si:H

2006 ◽  
Vol 20 (25) ◽  
pp. 1591-1596 ◽  
Author(s):  
ISIK KARABAY
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Window Layer ◽  
Optical And Electrical Properties ◽  
Research Plan ◽  
P Type ◽  
Gas Ratio ◽  
Made In

A series of undoped and p-doped a-SiC:H samples have been made in the framework of a research plan for obtaining high quality p-type window layers by "Plasma Enhanced Chemical Vapor Deposition (PECVD)" technique from the mixtures of silane ( SiH 4), methane ( CH 4) and diborane ( B 2 H 6) gases. For the optimization of the window layer, the dependence of the electrical (conductivity) and optical (band gap) properties due to altered ratios of methane and diborane gases were investigated. When the diborane gas ratio was changed from Y = 0.06 to Y = 0.24 with an increase of 0.06 steps at a constant of X = 0.948 methane gas ratio, the dark conductivity and optical band gap values changed from ~ 10-19 (Ω· cm )-1 to ~ 10-10 (Ω· cm )-1 and 2.542 eV to 2.178 eV, respectively, and between these values, the most appropriate layers can be selected.

Characteristics of Chemically Deposited Thin Film Solar Cells using SnS and Sb2S3 Absorbers

2006 ◽  
Vol 974 ◽  
Author(s):  
M. T. Santhamma Nair ◽  
David Avellaneda ◽  
Sarah Messina ◽  
P. K. Nair
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Large Scale ◽  
Optical Band Gap ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Open Circuit ◽  
Published Data ◽  
Scale Production ◽  
Silver Paint

ABSTRACTWe use SnS and Sb2S3 thin films of about 500 nm in thickness deposited on glass substrates by chemical deposition to develop solar cell structures: glass-SnO2:F/CdS/SnS/CuS/silver paint and SnO2:F/CdS/Sb2(S/Se)3/PbS/silver paint. Here, SnS and Sb2S3, and PbS are absorber materials suitable for large scale production, considering their abundance at 0.2 ppm (Sb) and 2 ppm (Sn) and 8ppm (pb) in the earth's crust according to published data. SnS films deposited through distinct reaction routes have optical band gap of 1.1 eV or 1.7 eV. In SnO2:F/CdS/SnS(1.1eV)/SnS(1.7 eV)/CuS/silver paint, open circuit voltage (Voc) of ≈ 400 mV, and short circuit current (Jsc)of 7 mA/cm2 are obtained with a cell efficiency of 1%. Sb2S3 thin films have optical band gap 1.7 eV, but could be reduced through reaction in Se-vapor, upon which solid solutions of Sb2(S/Se)3 are formed. In SnO2:F/CdS/Sb2(S/Se)3/PbS/silver paint, Voc of ≈ 640 mV, Jsc of 7 mA/cm2 and conversion efficiency of 1.5% are obtained.

scholarly journals Effect of Annealing on the Nanostructure Formation in Alkoxy Substituted Phthalocyanine Thin Films

2012 ◽  
Vol 9 (4) ◽  
pp. 1992-1999
Author(s):  
Vinu. T. Vadakel ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Sem Images ◽  
Glass Substrates ◽  
Heat Treated ◽  
Different Temperatures ◽  
Post Deposition

Vacuum deposited 2,3,9,10,16,17,23,24-octakis (octyloxy) phthalocyanine (H2PcOC8) thin films on glass substrates have exhibited a change on their surface morphology with the post deposition annealing temperature under normal atmosphere. These films have been characterized by optical absorptions and Scanning Electron Microscopy. SEM images also have shown nano-rod like structures for the samples annealed at different temperatures. The variation of optical band gap with annealing temperature is determined. The direct and allowed optical band gap energy has been evaluated from the α2versus hυ plots. The electrical conductivity of the films at various heat treated samples are also studied. The activation energies are determined from the Arrhenius plots of lnσ versus 1000/T . It shows variation with the annealing temperature.

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