Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung-Bae Park ◽  
Ji-Sim Jung ◽  
Jong-Man Kim ◽  
Myung-kwan Ryu ◽  
Sang-Yoon Lee ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon

AbstractMicrocrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10Å/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

Effect of Hydrogen Radical on Properties of Hydrogen in Hydrogenated Microcrystalline Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Takashi Itoh ◽  
Noriyuki Yamana ◽  
Hiroki Inouchi ◽  
Norimitsu Yoshida ◽  
Hidekuni Harada ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Integrated Intensity ◽  
Hydrogen Radical ◽  
Integrated Intensities

ABSTRACTHydrogenated microcrystalline silicon (μc-Si:H) films are prepared by hot-wire assisted plasma enhanced chemical vapor deposition, which controls the hydrogen radical density by filament temperatures, Tf, without changing other conditions. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is studied using infrared absorption and gas effusion spectroscopies. The hydrogen concentration decreases with increasing Tf. The crystalline volume fraction, Xc, increases with Tf and shows a peak at Tf of 1850 °C. Integrated intensities of the modes near 2000 and 2100 cm-1 decrease with increasing Tf. Integrated intensity of the mode near 880 cm-1 shows almost same tendency of Xc. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is discussed.

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

2013 ◽  
Vol 537 ◽  
pp. 197-200
Author(s):  
Chun Ya Li ◽  
Hao Zhang ◽  
Jun Li ◽  
Xi Feng Li ◽  
Jian Hua Zhang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Reaction Pressure ◽  
Silicon Thin Films

Under different growth conditions, microcrystalline silicon thin films are deposited successfully on glass substrates by the double-frequency plasma enhanced chemical vapor deposition (PECVD). We report the systematic investigation of the effect of process parameters (hydrogen dilution, substrate temperature, forward power, reaction pressure, et al.) on the growth characteristics of microcrystalline silicon thin films. Raman scattering spectra are used to analyze the crystalline condition of the films and the experimental results. Optimizing the process parameters, the highest crystalline volume fraction of microcrystalline silicon films was achieved. It is found that the crystalline volume fraction of microcrystalline silicon films reaches 72.2% at the reaction pressure of 450 Pa, H2/SiH4 flow ratio of 800sccm/10sccm, power of 400 W and substrate temperature of 350 °C.

scholarly journals Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Kee-Seok Nam ◽  
Yongsoo Jeong ◽  
Dong-Ho Kim ◽  
Sung-Gyu Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Crystalline Volume Fraction ◽  
Working Pressure ◽  
Scan Speed ◽  
Si Films ◽  
High Working Pressure

The crystalline volume of nanocrystalline silicon (Si) films could be successfully controlled simply by changing the substrate scan speed at the high working pressure of 300 Torr. The Si crystalline volume fraction was increased from 30% to 57% by increasing the scan speed from 8 to 30 mm/s. When the Si film was prepared at a low scan speed (8 mm/s), Si crystals of size 5 nm grew homogeneously through the whole film. The higher scan speed was found to accelerate crystallization, and crystals of size up to 25 nm were deposited in the Si film deposited when the scan speed was 30 mm/s.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Transport Path in Hydrogenated Microcrystalline Silicon

2002 ◽  
Vol 715 ◽  
Author(s):  
N. Wyrsch ◽  
C. Droz ◽  
L. Feitknecht ◽  
J. Spitznagel ◽  
A. Shah
Keyword(s):  
Raman Spectroscopy ◽  
Volume Fraction ◽  
Conductivity Measurement ◽  
Dark Conductivity ◽  
Transition Regime ◽  
Conductivity Data ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Transport Path

AbstractUndoped microcrystalline silicon samples deposited in the transition regime between amorphous and microcrystalline growth have been investigated by dark conductivity measurement and Raman spectroscopy. From the latter, a semi-quantitative crystalline volume fraction Xc of the sample was deduced and correlated with dark conductivity data in order to reveal possible percolation controlled transport. No threshold was observed around the critical crystalline fraction value Xc of 33%, as reported previously, but a threshold in conductivity data was found at Xc≈50%. This threshold is interpreted here speculatively as being the result of postoxidation, and not constituting an actual percolation threshold.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

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