Study of a Fabrication Process and Characterization of One Dimensional Array of Un-cooled Micro-bolometers Based on Germanium Films Deposited by Plasma

2007 ◽  
Vol 989 ◽  
Author(s):  
Mario Moreno ◽  
Andrey Kosarev ◽  
Alfonso Torres ◽  
Roberto Ambrosio
Keyword(s):  
High Resistance ◽  
Low Frequency ◽  
Deposition Process ◽  
Film Deposition ◽  
Fabrication Process ◽  
Thermal Coefficient ◽  
One Dimensional ◽  
Dimensional Array ◽  
Bridge Type

AbstractIn our previous works we have studied the fabrication process and characterization of single cell micro-bolometers based on germanium thin films deposited by low frequency (LF) PECVD technique at low temperature and fully compatible with the IC fabrication technology. We have demonstrated promising properties of those devices for further development of IR imaging systems.In this work we report the study of a fabrication process and characterization of one dimensional array of 32 un-cooled micro-bolometers. We have used surface micro-machining techniques for the array fabrication onto a silicon wafer. The micro-bolometers in the array have a “bridge type” configuration, in which a SiNx supporting film is suspended 2.5 μm from the substrate by two legs forming the bridge in order to provide sufficient thermo-isolation for thermo-sensing layer, which is deposited by LF PECVD over it. The a-GexSiy:H film used in this devices showed high activation energy Ea= 0.34 eV, providing high thermal coefficient of resistance, TCR=α=0.043 K-1 and improved but still high resistance. We studied the effect of include boron in the a-GexSiy:H film deposition process in order to reduce its undesirable high resistance and we used this layer (a-GexBySiz:H) as thermo-sensing film in the micro-bolometers arrays also. The active area of the cells in the array is Ab=70×66 μm2 and the area of the array including interconnection lines and pads is A=1600×3120 μm2. The temperature dependence of conductivity σ(T), current-voltage characteristics I(U) and spectral noise density have been measured in the micro-bolometers in the array in order to characterize and compare their performance characteristics, such as responsivity and detectivity.

Optical Characterization of a One-Dimensional Array of Narrow Antiwires

1993 ◽  
Vol 326 ◽  
Author(s):  
D. Huang ◽  
G. Gumbs ◽  
V. Fessatidis ◽  
N.J.M. Horing
Keyword(s):  
Optical Characterization ◽  
One Dimensional ◽  
Dimensional Array

Synthesis and Characterization of Bi2Mn0.1V0.9O5.35-δ Thin Films

2011 ◽  
Vol 480-481 ◽  
pp. 639-643
Author(s):  
Ming Guo ◽  
Lan Ying Wu ◽  
Chang Xin Liu ◽  
Song Hua Zhou
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Complex Impedance ◽  
Low Frequency ◽  
Deposition Process ◽  
Debye Model ◽  
Homogeneous Distribution ◽  
Solution Deposition ◽  
Complex Impedance Spectra

The Bi2Mn0.1V0.9O5.35-δ (BIMNVOX.10) thin films have been successfully deposited on the LaNiO3(LNO)/Si (100) substrates by chemical solution deposition process. The phases, morphology and electrical properties of samples have been studied. The BIMNVOX.10 films show a (00l)-preferred orientation and have a homogeneous distribution of grains. A low frequency dielectric dispersion observed in the films may be originated from the short distant diffusion of oxygen vacancies. The Cole-Cole plots of dielectric constant for the BIMNVOX.10 films appear semicircular arc with the center off the x-axis and deviate from the ideal mono-dispersive Debye model. The frequency dependent of ac conductivity for BIMNVOX.10 films follows the Joscher’s power law, mainly contributed to the grain resistivity and predicts the nature of an oxygen vacancies conduction process. The complex impedance spectra reveal that electrical process arises due to contribution from the grain interior and grain boundary effects.

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices

2019 ◽  
Vol 963 ◽  
pp. 244-248
Author(s):  
Ling Guo ◽  
Koji Kamei ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Schottky Barrier ◽  
Deposition Process ◽  
Film Deposition ◽  
Schottky Barrier Diode ◽  
Fabrication Process ◽  
Electrical Characteristics ◽  
Imaging Technology ◽  
Measurement Results

In this paper, the effects of various defects on the initial electrical characteristics of planar-MOSFET devices were investigated. The measurement results revealed that some pit defects that resulted from the fabrication process were as harmful as traditional killer defects in Schottky barrier diode devices. These pit defects could be observed and distinguished by photoluminescence imaging technology. It is necessary to inspect wafers during fabrication—especially before the film deposition process, when the pit defects are easily overlaid and hidden.

Correlation of Cleaning Conditions and Wafer Out-Gassing

2014 ◽  
Vol 219 ◽  
pp. 260-264
Author(s):  
Sok Hyung Han ◽  
Tae Ho Hwang ◽  
Si Chul Kim ◽  
Seung Ha Park ◽  
Byung Sul Ryu
Keyword(s):  
Deposition Process ◽  
Device Fabrication ◽  
Film Deposition ◽  
Fabrication Process ◽  
Single Type ◽  
Thickness Change ◽  
Layer Deposition ◽  
Dispersion Problem ◽  
Deposition Thickness ◽  
The Difference

To remove the oxide layer, BOE (Buffered Oxide Etchant) is widely used solution in semiconductor fabrication process. When using the BOE solution in single type equipment, NH3 ions are created by the chemical reaction. Because BOE is a mixture solution of NH4F and HF. And created NH3 ions make some problems during device fabrication process. As the device is shrinked, NH3 ion control in process chamber becomes more important. We studied the thickness change caused by NH3 ion.When backside cleaning process using the BOE solution, surface of backside was changed. And it affected the next poly layer deposition process. As a result, poly layer deposition thickness dispersion problem was occurred. We find that the difference between normal wafer and issued wafer about backside layer and fumed NH3 ion is main factor of this problem. In this paper, we will explain the cause of poly thickness dispersion issue that occurred at poly film deposition and analyze measurement of cleaning conditions by NH3 out-gassing.Key Words: Poly deposition thickness, NH3+ ion, BOE(Buffered Oxide Etchant),APM(Ammonium Peroxide Mixture), Out-gassing

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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