New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction

2007 ◽  
Vol 997 ◽  
Author(s):  
Yasuhisa Naitoh ◽  
Masayo Horikawa ◽  
Tetsuo Shimizu
Keyword(s):  
Bias Voltage ◽  
Nonvolatile Memory ◽  
Negative Resistance ◽  
Applied Bias Voltage ◽  
Metal Electrodes ◽  
Resistance Change ◽  
Characteristic Behaviour ◽  
High Bias ◽  
High Level ◽  
Gap Width

AbstractA large negative resistance is observed in the I-V characteristics of gold nanogap junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.

Effect of Filament Bias on the Properties of Amorphous and Nanocrystalline Silicon from Hot-Wire Chemical Vapor Deposition

1998 ◽  
Vol 507 ◽  
Author(s):  
H.N. Wanka ◽  
R. Brüggemann ◽  
C. Köhler ◽  
I. Zrinscak ◽  
M.B. Schubert
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Hot Wire ◽  
Applied Bias Voltage ◽  
Substrate Current ◽  
High Bias

ABSTRACTAt the high temperatures during hot-wire assisted chemical vapor deposition, ther- mal emission of electrons from the filament occurs. We studied the effect of filament bias, and thus the filament-to-substrate current, on the structural, electronic and optical properties of amorphous and nanocrystalline silicon deposited by this method. The current drawn by the substrate can be varied by many orders of magnitude as thermally emitted electrons are increasingly collected with applied bias voltage. The crystallinity of the nanocrystalline samples is not affected by the bias voltage. The defect density in amorphous silicon is affected by the electron bombardment at high bias voltage only, for which we also find a significant reduction in the mobility-lifetime product from steady-state photoconductivity.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Laser-Induced Growth of Titanium Nitride Microcolumns on Biased Titanium Targets

2005 ◽  
Vol 20 (1) ◽  
pp. 62-67 ◽  
Author(s):  
E. György ◽  
A. Pérez del Pino ◽  
P. Serra ◽  
J.L. Morenza
Keyword(s):  
Bias Voltage ◽  
Single Pulse ◽  
Laser Pulses ◽  
High Repetition Rate ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Surface Microrelief ◽  
High Repetition ◽  
Melting Threshold ◽  
Biased Samples

Titanium targets with a bias voltage ranging from −500 to +500 V were submitted to multipulse high repetition rate Nd:yttrium aluminum garnet (YAG; λ = 1.064 μm, τ ∼ 300 ns, ν = 30 kHz) laser irradiations in nitrogen at intensity values below the single-pulse melting threshold. The morphology of the TiN structures formed under the cumulative action of the laser pulses on the surface of the unbiased and biased targets was investigated by profilometry and scanning electron microscopy. Under these irradiation conditions, a specific columnar surface microrelief developed. The height of the microcolumns reached about 10–15 μm, and their diameter about 1–2 μm. The development of TiN microcolumns was enhanced by the applied bias voltage. The enhancement in the negative biased samples was stronger than that in the positive biased ones.

Effect of substrate bias voltage on the properties of arc ion-plated TiN films onto high speed steels

1996 ◽  
Vol 11 (5) ◽  
pp. 1149-1156 ◽  
Author(s):  
Syuji Yamamoto ◽  
Hiroshi Ichimura
Keyword(s):  
Bias Voltage ◽  
High Speed ◽  
Chemical Properties ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Tin Films ◽  
High Bias ◽  
Physical And Chemical ◽  
Deposited Films ◽  
And Chemical Properties

The effect of substrate bias voltage on the properties of arc ion-plated TiN films onto high speed steels has been investigated. The high density structure with a large crystallite size grew at the high bias voltage. TiN films deposited by higher bias exhibited strong preferential (111) orientation from XRD. The internal stress of TiN films increased at first with increasing substrate bias voltage; however, it decreased as the bias voltage increased over 100 V. The coating adhesion measured by the scratch tester increased with increasing bias voltage, and this is coupled with a cohesion of films. Cutting performance of TiN coated drills, which increased markedly with increasing substrate bias, has been studied in relation to the physical and chemical properties of deposited films.

Generation of wide range and stable THz waves using a laser chaos and a high bias voltage

2013 ◽  
Author(s):  
Fumiyoshi Kuwashima ◽  
Takuya Shirao ◽  
Masahiko Tani ◽  
Kazuyoshi Kurihara ◽  
Kohji Yamamoto ◽  
...  
Keyword(s):  
Bias Voltage ◽  
High Bias Voltage ◽  
Wide Range ◽  
High Bias ◽  
Thz Waves

Towards a high bias voltage MEMS filter using electrostatic levitation

2021 ◽  
Vol 150 ◽  
pp. 107250
Author(s):  
Mark Pallay ◽  
Ronald N. Miles ◽  
Shahrzad Towfighian
Keyword(s):  
Bias Voltage ◽  
Electrostatic Levitation ◽  
High Bias Voltage ◽  
High Bias ◽  
Mems Filter
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