Segregation and Trapping of Gold During Ion-Induced Crystallization of Amorphous Si

1988 ◽  
Vol 100 ◽  
Author(s):  
J. M. Poate ◽  
J. Linnros ◽  
F. Priolo ◽  
D. C. Jacobson ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Ion Irradiation ◽  
Equilibrium Concentration ◽  
Segregation Coefficient ◽  
Epitaxial Crystallization ◽  
Temperature Range ◽  
Interfacial Segregation ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Crystal Interface

ABSTRACTA novel regime of crystal growth and segregation has been observed. Amorphous Si layers were uniformly doped with Au and epitaxial crystallization was induced in the temperature range 250–420°C using 2.5 MeV Ar ion irradiation. The Au segregation at the amorphous/crystal interface is analogous to behavior at liquid/solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6A/sec. This process results in the trapping of Au in crystalline Si at concentrations some ten orders of magnitude in excess of equilibrium concentration.

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs

1986 ◽  
Vol 74 ◽  
Author(s):  
R. G. Elliman ◽  
J. S. Williams ◽  
S. T. Johnson ◽  
E. Nygren
Keyword(s):  
Crystal Growth ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Poor Quality ◽  
Layer By Layer ◽  
Epitaxial Crystallization ◽  
Non Linear ◽  
Thickness Layer

AbstractThin amorphous layers in crystalline Si and GaAs substates have been irradiated at selected temperatures with 1.5 MeV Ne+ ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 A surface amorphous layer for temperatures typically >200°C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures >65°C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

Interface Velocity and Noble Metal Segregation During Ion Beam Induced Epitaxial Crystallization

1989 ◽  
Vol 157 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Interface Velocity ◽  
Solid Phase Epitaxy ◽  
Segregation Coefficient ◽  
Time Resolved ◽  
Interfacial Segregation ◽  
Amorphous Si ◽  
Impurity Profiles

ABSTRACTThe interface velocity of Au and Ag doped amorphous Si during ion beam induced epitaxy was measured using in situ time resolved reflectivity. Interfacial segregation coefficients were determined as a function of composition from numerical simulations. At 320°C Au impurities enhanced the velocity by up to a factor of 2.5 compared to the intrinsic case. Silver slightly retarded re-growth by 10 %. These effects are qualitatively similar to the case of thermal solid phase epitaxy. Using the measured impurity profiles and interface velocity, computer simulations relate the segregation coefficient to the concentrations of the impurity at the interface. In both cases, the segregation coefficient increases with increasing interfacial impurity concentration.

A phenomenological model of ion-induced crystallization and amorphization

1991 ◽  
Vol 6 (10) ◽  
pp. 2103-2108 ◽  
Author(s):  
G. Carter ◽  
M.J. Nobes
Keyword(s):  
Phenomenological Model ◽  
Ion Irradiation ◽  
Ion Flux ◽  
Amorphous Zone ◽  
Induced Crystallization ◽  
Crystal Interface

A simple phenomenological model is developed to explain, qualitatively, the observed temperature and ion flux dependences of either recrystallization or further amorphous growth of amorphous layers in semiconductors when exposed to ion irradiation. The model includes radiation assisted annealing processes and thermally modified amorphous zone production at the amorphous-crystal interface.

Aluminum induced crystallization of amorphous Si: Thermal annealing and ion irradiation process

2019 ◽  
Vol 523 ◽  
pp. 119628 ◽  
Author(s):  
G. Maity ◽  
R. Singhal ◽  
S. Dubey ◽  
S. Ojha ◽  
P.K. Kulriya ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ion Irradiation ◽  
Amorphous Si ◽  
Irradiation Process ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Concentration-Independent Solute Segregation in Laser Annealing of Semiconductor Crystals

1983 ◽  
Vol 23 ◽  
Author(s):  
Jun-ichi Chikawa ◽  
Fumio Sato ◽  
Tadasu Sunada
Keyword(s):  
Mixed Crystal ◽  
Laser Annealing ◽  
Solute Segregation ◽  
Atomic Processes ◽  
Segregation Coefficient ◽  
Depth Profiles ◽  
Semiconductor Crystals ◽  
Impurity Segregation ◽  
Solute Atoms ◽  
Interfacial Segregation

ABSTRACTAtomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.

scholarly journals Metal-Induced Crystallization Mechanism of Amorphous Si0.OGe0.4 Thin Film

Materia Japan ◽  
2004 ◽  
Vol 43 (12) ◽  
pp. 1010-1010
Author(s):  
Masaru Itakura ◽  
Noriyuki Kuwano
Keyword(s):  
Thin Film ◽  
Crystallization Mechanism ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Induced Crystallization

Suppression of Crystal Nucleation in Amorphous Si Thin Films by High Energy Ion Irradiation at Intermediate Temperatures

1990 ◽  
Vol 201 ◽  
Author(s):  
James S. Im ◽  
Jung H. Shin ◽  
Harry A. Atwater
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Intermediate Temperature ◽  
Crystal Nucleation ◽  
Potential Applications ◽  
Annealing Cycle ◽  
Amorphous Si ◽  
Si Films ◽  
Device Technology

AbstractIn situ electron microscopy has been used to observe crystal nucleation and growth in amorphous Si films. Results demonstrate that a repeated intermediate temperature ion irradiation/thermal annealing cycle can lead to suppression of nucleation in amorphous regions without inhibition of crystal growth of existing large crystals. Fundamentally, the experimental results indicate that the population of small crystal clusters near the critical cluster size is affected by intermediate temperature ion irradiation. Potential applications of the intermediate temperature irradiation/thermal anneal cycle to lateral solid epitaxy of Si and thin film device technology are discussed.

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