A phenomenological model of ion-induced crystallization and amorphization

1991 ◽  
Vol 6 (10) ◽  
pp. 2103-2108 ◽  
Author(s):  
G. Carter ◽  
M.J. Nobes
Keyword(s):  
Phenomenological Model ◽  
Ion Irradiation ◽  
Ion Flux ◽  
Amorphous Zone ◽  
Induced Crystallization ◽  
Crystal Interface

A simple phenomenological model is developed to explain, qualitatively, the observed temperature and ion flux dependences of either recrystallization or further amorphous growth of amorphous layers in semiconductors when exposed to ion irradiation. The model includes radiation assisted annealing processes and thermally modified amorphous zone production at the amorphous-crystal interface.

Segregation and Trapping of Gold During Ion-Induced Crystallization of Amorphous Si

1988 ◽  
Vol 100 ◽  
Author(s):  
J. M. Poate ◽  
J. Linnros ◽  
F. Priolo ◽  
D. C. Jacobson ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Ion Irradiation ◽  
Equilibrium Concentration ◽  
Segregation Coefficient ◽  
Epitaxial Crystallization ◽  
Temperature Range ◽  
Interfacial Segregation ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Crystal Interface

ABSTRACTA novel regime of crystal growth and segregation has been observed. Amorphous Si layers were uniformly doped with Au and epitaxial crystallization was induced in the temperature range 250–420°C using 2.5 MeV Ar ion irradiation. The Au segregation at the amorphous/crystal interface is analogous to behavior at liquid/solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6A/sec. This process results in the trapping of Au in crystalline Si at concentrations some ten orders of magnitude in excess of equilibrium concentration.

Energetic ion irradiation induced crystallization of Ni–Mn–Sn ferromagnetic shape memory alloy thin film

Vacuum ◽  
2013 ◽  
Vol 89 ◽  
pp. 190-196 ◽  
Author(s):  
R. Vishnoi ◽  
R. Singhal ◽  
K. Asokan ◽  
J.C. Pivin ◽  
D. Kanjilal ◽  
...  
Keyword(s):  
Thin Film ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Ion Irradiation ◽  
Alloy Thin Film ◽  
Ferromagnetic Shape Memory Alloy ◽  
Ferromagnetic Shape Memory ◽  
Induced Crystallization

Helium ion irradiation behavior of Ni-1wt.%SiCNP composite and the effect of ion flux

2015 ◽  
Vol 467 ◽  
pp. 848-854 ◽  
Author(s):  
X.L. Zhou ◽  
H.F. Huang ◽  
R. Xie ◽  
G.J. Thorogood ◽  
C. Yang ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Flux ◽  
Helium Ion ◽  
Irradiation Behavior

A poly(vinylidene fluoride-co-hexafluoro propylene) nanohybrid membrane using swift heavy ion irradiation for fuel cell applications

2015 ◽  
Vol 3 (19) ◽  
pp. 10413-10424 ◽  
Author(s):  
Karun Kumar Jana ◽  
Amit K. Thakur ◽  
Vinod K. Shahi ◽  
Devesh K. Avasthi ◽  
Dipak Rana ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Vinylidene Fluoride ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Thin Polymer ◽  
Poly Vinylidene Fluoride ◽  
Amorphous Zone

Through channels in thin polymer/nanohybrid films have been made by irradiating with high energy swift heavy ions (SHI) followed by selective chemical etching of the amorphous zone in the latent track created by SHI during the bombardment.

Ion Beam Modification of TI-Ba-Ca-Cu-O Type High Temperature Superconductors During Irradiation

1994 ◽  
Vol 373 ◽  
Author(s):  
P.P. Newcomer ◽  
L. M. Wang ◽  
B. Morosin
Keyword(s):  
High Temperature ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Ion Beam Modification ◽  
Moiré Fringes ◽  
High Resolution Tem ◽  
20 Nm ◽  
Induced Crystallization

AbstractMicrostructural modification of high temperature superconductor (HTS) single-crystal plates of T1-1212 and T1-2212 (numbers designate the Tl/Ba/Ca/Cu cation ratio) was studied during 1.5 MeV Kr+ and Xe+ ion irradiation with in-situ electron diffraction and after ion irradiation with high resolution TEM (HRTEM). Similar in-situ temperature dependence effects are seen for both phases. During irradiations from 22K to 673K, an amorphous halo develops after very low ion dose or fluence (l.7X1012 ions/cm2). During irradiation at 100K and 300K, complete amorphization is obtained, while at 22K and ≥533K, the halo fades slightly and a polycrystalline ring pattern develops, indicating ion irradiation induced crystallization occurred. After a low ion dose (8.5XlO12ions/cm2) at 100K and 300K, HRTEM reveals amorphous regions 5 -20 nm in size which are not columnar and do not all penetrate the entire sample thickness. At 22K and ≥533K, Moire fringes and misoriented crystallites of cascade size are observed. The 4 - 6nm crystallites are thallium-rich.

Layer by Layer Amorphization in Si: Temperature, Ion Mass and Flux Effects

1993 ◽  
Vol 321 ◽  
Author(s):  
A. Battaglia ◽  
G. Romano ◽  
S. U. Campisano
Keyword(s):  
Activation Energy ◽  
Substrate Temperature ◽  
Apparent Activation Energy ◽  
Phenomenological Model ◽  
Ion Flux ◽  
Experimental Results ◽  
Layer By Layer ◽  
Kinetics Of Crystallization ◽  
Temperature Range ◽  
Kinetics Of

ABSTRACTThe layer-by-layer amorphization process is explored in a temperature range in which the kinetics of crystallization can be neglected. It has been found that the pure amorphization rate increases exponentially as the substrate temperature is decreased with an apparent activation energy of 0.48 eV. Moreover the rate increases with both the ion flux and the energy deposited into elastic collisions. A phenomenological model is proposed to explain the experimental results.

Sign in / Sign up

Export Citation Format

Share Document