High-Quality Thin Si Film By Spe Regrowth on Epitaxially Grown Spinel

1985 ◽  
Vol 53 ◽  
Author(s):  
Takafumi Kimura ◽  
Hideki Yamawaki ◽  
Yoshihiro Arimoto ◽  
Kazuto Ikeda ◽  
Masaru Ihara ◽  
...  
Keyword(s):  
Hall Mobility ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Stacking Fault ◽  
High Electron ◽  
Si Substrate ◽  
High Quality ◽  
Spinel Layer ◽  
Fault Density ◽  
Amorphous Si

ABSTRACTA high-quality thin Si layer on epitaxial spinel(MgO·Al2O3) on Si substrate has been developed. It was obtained by the solid phase epitaxial (SPE) regrowth of amorphous Si with Si seed islands on the epitaxially grown spinel. The SPE-Si layer on the epitaxial spinel was superior to conventional Si on sapphire (SOS) in stacking-fault density, Hall mobility, and contamination from the insulating materials. The SPESi layer has low stacking-fault density of 10–50 cm-2, even for 0.4 μm thickness. This value is eight orders of magnitude less than that of Si on epitaxial spinel obtained by vapor phase epitaxial (VPE) growth with SiH4. The SPE-Si also has high electron Hall mobility of 880 cm2/V-s for n=5×l016 cm-3, for 1-μm-thick Si. This value is about 85% of that in bulk Si, and is higher than that in Si on spinel grown by VPE-growth and SOS. (100) spinel layer was grown on (100) Si substrate by a MgCI2-Al-HCI-CO2-H2 VPE growth system. After thermal oxidation, Si seed islands were grown on the spinel by the pyrolysis of SiH4. Amorphous Si was deposited on the Si seed islands by chemical vapor deposition (CVD) of SiH4. The SPE-Si layer was obtained by regrowth of the amorphous Si in a hydrogen atmosphere.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (21) ◽  
pp. 15795-15799 ◽  
Author(s):  
Qi Fu ◽  
Wenhui Wang ◽  
Lei Yang ◽  
Jian Huang ◽  
Jingyu Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Disulfide ◽  
Controllable Synthesis ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
Direct Band

Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.

Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed SiO2 Layer

1984 ◽  
Vol 35 ◽  
Author(s):  
M. Tabe ◽  
Y. Kunii
Keyword(s):  
Solid Phase ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Ultra High Vacuum ◽  
Low Density ◽  
Solid Phase Epitaxy ◽  
Planar Substrate ◽  
Shadowing Effect ◽  
Amorphous Si

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.

Ge epilayer of high quality on a Si substrate by solid‐phase epitaxy

1993 ◽  
Vol 63 (10) ◽  
pp. 1405-1407 ◽  
Author(s):  
W. S. Liu ◽  
J. S. Chen ◽  
D. Y. C. Lie ◽  
M.‐A. Nicolet
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality

scholarly journals Ion Beam Annealing of Si Co-Implanted with Ga and As

1989 ◽  
Vol 157 ◽  
Author(s):  
S. P. Withrow ◽  
O. W. Holland ◽  
S. J. Pennycook ◽  
J. Pankove ◽  
A. Mascarenhas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ion Beam ◽  
Ion Pairing ◽  
Si Substrate ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTIon beam annealing of amorphous Si(100) layers formed by co-implantation of overlapping Ga and As distributions is studied. Annealing was done using 750 keV Si+ ions with the Si substrate held at 300°C. The samples were characterized using 2.0 and 5.0 MeV He+ backscattering/channeling as well as by transmission electron microscopy (TEM). Crystallization of the amorphous Si layer occurs during irradiation via solid-phase-epitaxial growth without impurity precipitation or segregation. Both the Ga and As are mainly substitutional in the Si lattice, even at concentrations in excess of 7 at. % for each species. These results are attributed to compensation effects, most likely through ion pairing of the dopants.

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

Deposition and Characterization of Polycrystalline Silicon Films on Glass for thin Film Solar Cells

1997 ◽  
Vol 467 ◽  
Author(s):  
R. B. Bergmann ◽  
J. Krinke ◽  
H. P. Strunk ◽  
J. H. Werner
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Solid Phase ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Random Nucleation ◽  
Amorphous Si ◽  
Log Normal ◽  
Polycrystalline Silicon Films

ABSTRACTWe deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600°C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 μm. Using transmission electron microscopy we find a log-normal grain size distribution in our films. We demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

Photosensitivity of Monolayer Graphene-Base Field Effect Transistor

2018 ◽  
Author(s):  
Jowesh Avisheik Goundar ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Color Temperature ◽  
Monolayer Graphene ◽  
Light Illumination ◽  
Si Substrate ◽  
High Quality ◽  
Effect Transistor

The optical properties and device physics of monolayer graphene under light is investigated in this study. In order to understand the change of the electronic behavior of graphene under light, it was necessary to study from the most fundamental layer with high quality. Thus, it became mandatory to develop a highly efficient, low-cost fabrication process for synthesis of high-quality monolayer graphene. The high-quality monolayer graphene was grown on a copper foil using a low-pressure chemical vapor deposition (LP-CVD) method at temperature of 1035°C for 10 minutes. Acetylene was used as the precursor gas for the synthesis of monolayer graphene. Thin Pt/Au films were, then, deposited on a silicon dioxide/silicon (SiO2/Si) substrate using electron beam (EB) lithography which served as source and drain electrodes of a transistor. The synthesized graphene was, then, transferred to a SiO2/Si substrate using PMMA (polymethyl methacrylate)-assisted method. The quality of the synthesized graphene was validated using Raman spectroscopy. No significant D peak was observed in the Raman spectra of the synthesized graphene. This result validated the high quality of the transferred graphene. Next, the photo-sensitivity of G-FET was investigated under light source of color temperature of 2856 K at room temperature. The electron transfer characteristic of the fabricated G-FET was measured under dark and light illumination conditions. Finally, the graphene-based field effect transistor G-FET demonstrated an external photo responsivity of about 200 μA/W with a maximum photocurrent attained to be 0.2 μA at an incident luminance power of 1 mW. The active detection region of this sample was 1000 × 60 μm2.

Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

2011 ◽  
Vol 4 (11) ◽  
pp. 115501 ◽  
Author(s):  
Binh-Tinh Tran ◽  
Edward-Yi Chang ◽  
Kung-Liang Lin ◽  
Yuen-Yee Wong ◽  
Kartika Chandra Sahoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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