The Effects of N2 and Ar as the Ambient Gas During Rapid Thermal Annealing of Tungsten Silicide

1988 ◽  
Vol 100 ◽  
Author(s):  
Paul Martin Smith ◽  
Michael O. Thompson
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Film ◽  
Nitride Layer ◽  
Nucleation And Growth ◽  
Tungsten Silicide ◽  
Film Adhesion ◽  
Columnar Grains ◽  
Ambient Gases

ABSTRACTRapid thermal annealing of amorphous tungsten silicide thin films (W0.62 Si0 38) on Si at 1100°C in Ar and N2 ambient gases was studied. All films annealed in N2 exhibited good adhesion and remained smooth with no large grain growth. Films annealed in Ar showed grain nucleation and growth from the film perimeter until a critical stress was achieved, followed by stress-assisted grain growth. The resulting growth of large columnar grains caused the films to delaminate. Removal of the surface oxide/nitride layer from the silicide prior to annealing resulted in uniform nucleation and growth over the entire film during annealing in Ar, with no stress-assisted grain growth or film delamination. No difference, however, was observed during annealing in N2. These results suggest that a surface film produced during annealing in N2 slows the nucleation and growth and consequently enhances film adhesion.

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  
Keyword(s):  
Grain Growth ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Morphology Evolution ◽  
Smooth Interface ◽  
Substrate Side ◽  
Nickel Germanides

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

Role of negatively charged vacancies in secondary grain growth in polycrystalline silicon during rapid thermal annealing

1991 ◽  
Vol 58 (21) ◽  
pp. 2414-2416 ◽  
Author(s):  
Keunhyung Park ◽  
Shubneesh Batra ◽  
Sanjay Banerjee
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon

Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing

1991 ◽  
Vol 230 ◽  
Author(s):  
S. Batra ◽  
K. Park ◽  
M. Lobo ◽  
S. Banerjee
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon On Insulator ◽  
Active Devices ◽  
Drastic Increase ◽  
Heavily Doped ◽  
Soi Technology

AbstractTo successfully implement Silicon-on-Insulator (SOI) technology using polysilicon-on-oxide, it is necessary to maximize the grain size such that the active devices are entirely within very large single crystal grains. A drastic increase in grain size in polysilicon has been reported due to secondary grain growth in ultra-thin, heavily n-type doped films upon regular furnace annealing. Very little work has been undertaken, however, to study secondary grain growth during Rapid Thermal Annealing (RTA).This paper is a study of the grain growth mechanism in heavily P-doped, amorphous silicon films during RTA. Secondary grains as large as 16 μm have been obtained in 160 nm thick films after a 180 s RTA at 1200 °C, representing a grainsize- to-film-thickness-ratio of 100:1. This is the largest secondary grain size and grain-size-to-film-thickness reported in the literature. A detailed analysis of negatively charged silicon vacancies has also been employed to explain the lower activation energy (1.55 eV) of secondary grain growth compared to that of normal grain growth (2.4 eV).

Selective tungsten silicide formation by ion‐beam mixing and rapid thermal annealing

1985 ◽  
Vol 57 (6) ◽  
pp. 1890-1894 ◽  
Author(s):  
B‐Y. Tsaur ◽  
C. K. Chen ◽  
C. H. Anderson ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Silicide Formation ◽  
Ion Beam Mixing ◽  
Tungsten Silicide

Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films

1987 ◽  
Vol 92 ◽  
Author(s):  
R. C. Cammarata ◽  
C. V. Thompson ◽  
S. M. Garrison
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
Polysilicon Films ◽  
Heavily Doped ◽  
Grain Growth Behavior ◽  
Short Times

ABSTRACTRecently there has been a great deal of interest in the use of thin (≤0.1µm) heavily doped polysilicon films as diffusion sources for shallow junctions in silicon substrates. It has been reported that grain growth and solid phase epitaxy occur during annealing of such films and that the apparent rates of both are much greater during rapid thermal annealing. We report similar grain growth behavior for rapid thermal annealed thin polysilicon films deposited onto amorphous SiO2. Based on these experimental results we propose that solid phase homoepitaxy in polysilicon films occurs via secondary grain growth. This process proceeds rapidly at first but slows down due to grain boundary drag. Rapid thermal annealing of polysilicon films provides a method for selectively utilizing the kinetic process that dominates for short times.

Surface‐energy‐driven grain growth during rapid thermal annealing (<10 s) of thin silicon films

1987 ◽  
Vol 61 (4) ◽  
pp. 1652-1655 ◽  
Author(s):  
S. M. Garrison ◽  
R. C. Cammarata ◽  
C. V. Thompson ◽  
Henry I. Smith
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films ◽  
Thin Silicon

Rapid Thermal Annealing of Amorphous Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Pei-Yi Lin ◽  
Ping-Jung Wu ◽  
I-Chen Chen
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor

AbstractHydrogenated amorphous silicon (a-Si:H) thin films were deposited on pre-oxidized Si wafers by electron cyclotron resonance chemical vapor deposition (ECRCVD). The rapid thermal annealing (RTA) treatments were applied to the as-grown samples in nitrogen atmosphere, and the temperature range for the RTA process is from 450 to 950 °C. The crystallization and grain growth behaviors of the annealed films were investigated by Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The onset temperature for the crystallization and grain growth is around 625 ∼ 650°C. The crystalline fraction of annealed a-Si:H films can reach ∼80%, and a grain size up to 17 nm could be obtained from the RTA treatment at 700 °C. We found that the crystallization continues when the grain growth has stopped.

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