Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films

1987 ◽  
Vol 92 ◽  
Author(s):  
R. C. Cammarata ◽  
C. V. Thompson ◽  
S. M. Garrison
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
Polysilicon Films ◽  
Heavily Doped ◽  
Grain Growth Behavior ◽  
Short Times

ABSTRACTRecently there has been a great deal of interest in the use of thin (≤0.1µm) heavily doped polysilicon films as diffusion sources for shallow junctions in silicon substrates. It has been reported that grain growth and solid phase epitaxy occur during annealing of such films and that the apparent rates of both are much greater during rapid thermal annealing. We report similar grain growth behavior for rapid thermal annealed thin polysilicon films deposited onto amorphous SiO2. Based on these experimental results we propose that solid phase homoepitaxy in polysilicon films occurs via secondary grain growth. This process proceeds rapidly at first but slows down due to grain boundary drag. Rapid thermal annealing of polysilicon films provides a method for selectively utilizing the kinetic process that dominates for short times.

Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing

1991 ◽  
Vol 230 ◽  
Author(s):  
S. Batra ◽  
K. Park ◽  
M. Lobo ◽  
S. Banerjee
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon On Insulator ◽  
Active Devices ◽  
Drastic Increase ◽  
Heavily Doped ◽  
Soi Technology

AbstractTo successfully implement Silicon-on-Insulator (SOI) technology using polysilicon-on-oxide, it is necessary to maximize the grain size such that the active devices are entirely within very large single crystal grains. A drastic increase in grain size in polysilicon has been reported due to secondary grain growth in ultra-thin, heavily n-type doped films upon regular furnace annealing. Very little work has been undertaken, however, to study secondary grain growth during Rapid Thermal Annealing (RTA).This paper is a study of the grain growth mechanism in heavily P-doped, amorphous silicon films during RTA. Secondary grains as large as 16 μm have been obtained in 160 nm thick films after a 180 s RTA at 1200 °C, representing a grainsize- to-film-thickness-ratio of 100:1. This is the largest secondary grain size and grain-size-to-film-thickness reported in the literature. A detailed analysis of negatively charged silicon vacancies has also been employed to explain the lower activation energy (1.55 eV) of secondary grain growth compared to that of normal grain growth (2.4 eV).

Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic. Implanted Metastable Pseudomorphic Ge0.08Si0.92 AND GeO.16SiO.84 ON Si(100)

1995 ◽  
Vol 379 ◽  
Author(s):  
D.Y.C. Lie ◽  
J.H. Song ◽  
M.-A. Nicolet ◽  
N.D. Theodore ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Epitaxial Regrowth ◽  
Control Samples

ABSTRACTMetastable pseudomorphic GexSi1−x (x=8%,16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800 × for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600 ×C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.

Rapid Thermal Annealing And Solid Phase Epitaxy Of Ion Implanted InP

1986 ◽  
Author(s):  
G. Bahir ◽  
J. L. Merz ◽  
J. R. Abelson ◽  
T. W. Sigmon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Ion Implanted

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

scholarly journals Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2248 ◽  
Author(s):  
Hadi Mahmodi ◽  
Md Hashim ◽  
Tetsuo Soga ◽  
Salman Alrokayan ◽  
Haseeb Khan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Infrared Region ◽  
Alloy Formation ◽  
Phase Mixing ◽  
Si Substrates ◽  
Msm Photodetector

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing

2007 ◽  
Vol 124-126 ◽  
pp. 447-450 ◽  
Author(s):  
Hyoung June Kim
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Radiative Heating ◽  
Solid Phase Crystallization ◽  
Glass Substrates ◽  
Grain Structures ◽  
Amorphous Si ◽  
Si Thin Film

Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

scholarly journals Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032150 ◽  
Author(s):  
Min-Hao Hong ◽  
Chun-Wei Chang ◽  
Dung-Ching Perng ◽  
Kuan-Ching Lee ◽  
Shiu-Ko Jang Jian ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Substrates

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  
Keyword(s):  
Grain Growth ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Morphology Evolution ◽  
Smooth Interface ◽  
Substrate Side ◽  
Nickel Germanides

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

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