Investigation of the Promotion Effect of Germane in Low Temperature Uhv-Cvd Silicon
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ABSTRACTHigh quality, low defect density, single crystalline silicon/germanium alloys have been grown on Si(100) substrate wafers in a low temperature UHV-CVD reactor. Using a silane/germane gaseous source, the growth rate of the epitaxial layer increases from 4 angstroms/minute with no germane present to 82 angstroms/minute with 12.7% germane present in the reaction gas mixture at 550C. The germanium/silicon ratio in the deposited alloy is a factor of two greater than the germane/silane ratio in the reaction gas mixture. The kinetics of this effect are studied and correlation to UHV hydrogen thermal desorption from single crystal silicon-germanium alloys are made.
1988 ◽
Vol 38
(17)
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pp. 12383-12387
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1991 ◽
Vol 6
(6)
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pp. 1278-1286
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