Ion Beam Lithography for Nano-scale Pattern Features

2007 ◽  
Vol 1020 ◽  
Author(s):  
John E.E. Baglin ◽  
Andrew J. Kellock ◽  
Jane E. Frommer
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Proximity Effects ◽  
Low Energy ◽  
Silicon Substrates ◽  
Ion Beam Lithography ◽  
Ion Species ◽  
Very High ◽  
Selection Of ◽  
Ion Beam Patterning

AbstractWith the expected availability of new tools for creating patterned ion beams, containing few-nanometer features, it is important to examine the fidelity of registering such patterns in the receiving medium, such as a photoresist layer in a lithographic fabrication process. In this paper, we report experiments exploring the characteristics of ion beam patterning of poly methyl methacrylate (PMMA) and polystyrene (PS) coatings on silicon substrates, with respect to their response as positive / negative resists to patterned low-energy H+, He+ and Ne+ beams. We examine by AFM the feature profiles thus created after solvent development of the polymer layers, and we examine the dependence of the polymer response upon ion species and fluence. Edge resolution ¡Ü20 nm is readily obtained, and broad process windows are identified in fluence ranges around 1013 ions/cm2. Proximity effects are shown to be negligible, except after exposure at very high ion fluences. Granularity within the final pattern features is shown to be a potential concern for high energy, light ion irradiations. Optimization of edge resolution is clearly possible, by appropriate selection of ion species, energy and fluence to suit the receiving medium.

The Dipole Magnets Temperature Monitoring and Interlocking Protection System of HIRFL-CSRm

2015 ◽  
Vol 789-790 ◽  
pp. 1078-1081 ◽  
Author(s):  
Jia Yin ◽  
Li Li Li ◽  
Yan Yu Wang
Keyword(s):  
Storage Ring ◽  
Ion Beam ◽  
Economic Loss ◽  
Heavy Ion ◽  
High Energy ◽  
Temperature Monitoring ◽  
Low Energy ◽  
Protection System ◽  
Research Facility ◽  
Very High

HIRFL-CSRm is a heavy ion synchrotron, named the main Cooling Storage Ring of Heavy Ion Research Facility of Lanzhou. Its role is to cool and accumulate the injected low energy ion beam, and then accelerate to high energy and extract. So, requirements for performance and safety of the magnet which directly affect the intensity and stability of ion beam is very high. This paper mainly state temperature monitoring and interlocking protection for the dipole magnets of HIRFL-CSRm to protect magnets, reduce the economic loss, and ultimately ensure safe running of HIRFL.

High energy heavy ion beam lithography in silicon

2007 ◽  
Vol 261 (1-2) ◽  
pp. 731-735 ◽  
Author(s):  
Bibhudutta Rout ◽  
Alexander D. Dymnikov ◽  
Daniel P. Zachry ◽  
Elia V. Eschenazi ◽  
Yongqiang Q. Wang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beam Lithography ◽  
Heavy Ion Beam

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Germanium selenide: A resist for low‐energy ion beam lithography

1981 ◽  
Vol 19 (4) ◽  
pp. 1363-1367 ◽  
Author(s):  
A. Wagner ◽  
D. Barr ◽  
T. Venkatesan ◽  
W. S. Crane ◽  
V. E. Lamberti ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Germanium Selenide ◽  
Ion Beam Lithography

scholarly journals ION BEAM MATERIALS ANALYSIS AND MODIFICATIONS AT keV TO MeV ENERGIES AT THE UNIVERSITY OF NORTH TEXAS

2014 ◽  
Vol 27 ◽  
pp. 1460147 ◽  
Author(s):  
BIBHUDUTTA ROUT ◽  
MANGAL S. DHOUBHADEL ◽  
PRAKASH R. POUDEL ◽  
VENKATA C. KUMMARI ◽  
WICKRAMAARACHCHIGE J. LAKSHANTHA ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nuclear Physics ◽  
Ion Beam ◽  
High Energy ◽  
Particle Accelerators ◽  
Educational Training ◽  
North Texas ◽  
University Of North Texas ◽  
Ion Beam Lithography ◽  
The University

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

SUPER SEPARATOR SPECTROMETER FOR THE LINAG HEAVY ION BEAMS

2009 ◽  
Vol 18 (10) ◽  
pp. 2160-2168 ◽  
Author(s):  
A. DROUART ◽  
J. A. NOLEN ◽  
H. SAVAJOLS
Keyword(s):  
Electron Spectroscopy ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
Low Energy ◽  
Current Status ◽  
Secondary Reactions ◽  
Two Stages ◽  
Rotating Target ◽  
Very High

The Super Separator Spectrometer (S3) will receive the very high intensity heavy ion beams from the LINAG accelerator of SPIRAL2. Its privileged fields of physics are the delayed study of rare nuclei and secondary reactions with exotic nuclei. The project is presently in a phase of conceptual design. It includes a rotating target to sustain the high energy deposit, a two stages separator (momentum achromat) and spectrometer (mass spectrometer). Various detection set-ups are foreseen, especially a delayed α, γ, and electron spectroscopy array and a gas catcher coupled to a low energy branch. We present here the current status of the project and its main features.

Low energy resonances in21Ne(p,?)22Na examined with a high energy resolution ion beam

1992 ◽  
Vol 343 (3) ◽  
pp. 361-366 ◽  
Author(s):  
H. W. Becker ◽  
H. Ebbing ◽  
W. H. Schulte ◽  
S. W�stenbecker ◽  
M. Berheide ◽  
...  
Keyword(s):  
Energy Resolution ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
High Energy Resolution
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