Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory

AbstractWe have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

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A Study On Dispersion Stability Of Nickel Nanoparticles Synthesized By Wire Explosion In Liquid Media

Archives of Metallurgy and Materials ◽

10.1515/amm-2015-0135 ◽

2015 ◽

Vol 60 (2) ◽

pp. 1379-1382 ◽

Cited By ~ 2

Author(s):

C.K. Kim ◽

G.-J. Lee ◽

M.K. Lee ◽

C.K. Rhee

Keyword(s):

Nickel Nanoparticles ◽

Spherical Shape ◽

Physical Method ◽

Average Diameter ◽

Dispersion Stability ◽

Wire Explosion ◽

Transmission Electron ◽

One Step ◽

Polymer Surfactant ◽

Microscopy Images

Abstract In this study, nickel nanoparticles were synthesized in ethanol using portable pulsed wire evaporation, which is a one-step physical method. From transmission electron microscopy images, it was found that the Ni nanoparticles exhibited a spherical shape with an average diameter of 7.3 nm. To prevent aggregation of the nickel nanoparticles, a polymer surfactant was added into the ethanol before the synthesis of nickel nanoparticles, and adsorbed on the freshly synthesized nickel nanoparticles during the wire explosion. The dispersion stability of the prepared nickel nanofluids was investigated by zeta-potential analyzer and Turbiscan optical analyzer. As a result, the optimum concentration of polymer surfactant to be added was suggested for the maximized dispersion stability of the nickel nanofluids.

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Effect of C60 concentrations on the flat-band voltage shift of nonvolatile memory devices with a hybrid poly-4-vinyl-phenol and C60 active layer

2007 Digest of papers Microprocesses and Nanotechnology ◽

10.1109/imnc.2007.4456185 ◽

2007 ◽

Author(s):

Hyuk Joo Kim ◽

Jae Hun Jung ◽

Jung Hun Ham ◽

Tae Whan Kim

Keyword(s):

Active Layer ◽

Nonvolatile Memory ◽

Flat Band ◽

Memory Devices ◽

Flat Band Voltage ◽

Voltage Shift ◽

Nonvolatile Memory Devices ◽

Vinyl Phenol

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BIODEGRADABLE GELATIN DECORATED Fe3O4 NANOPARTICLES FOR PACLITAXEL DELIVERY

Vietnam Journal of Science and Technology ◽

10.15625/2525-2518/55/1b/12085 ◽

2018 ◽

Vol 55 (1B) ◽

pp. 7 ◽

Cited By ~ 2

Author(s):

Dai Hai Nguyen

Keyword(s):

Fe3o4 Nanoparticles ◽

Drug Loading ◽

Spherical Shape ◽

Average Diameter ◽

Precipitation Method ◽

Loop Analysis ◽

Transmission Electron ◽

Potential Applications ◽

Size And Morphology ◽

Co Precipitation

The objective of this study is to prepare biodegradable iron oxide nanoparticles with gelatin (GEL) for paclitaxel (PTX) delivery. In detail, Fe3O4 nanoparticles were prepared and then coated them with GEL (Fe3O4@GEL) conjugate by co–precipitation method. Furthermore, the formation of Fe3O4@GEL was demonstrated by Fourier transform infrared (FT–IR) and powder X–ray diffraction (XRD). The superparamagnetic property of Fe3O4@GEL was also showed by hysteresis loop analysis, the saturation magnetization reached 20.36 emu.g–1. In addition, size and morphology of Fe3O4@GEL nanoparticles were determined by transmission electron microscopy (TEM). The results indicated that Fe3O4@GEL nanoparticles were spherical shape with average diameter of 10 nm. Especially, PTX was effectively loaded into the coated magnetic nanoparticles, 86.7 ± 3.2 % for drug loading efficiency and slowly released up to 5 days. These results suggest that the potential applications of Fe3O4@GEL nanoparticles in the development of stable drug delivery systems for cancer therapy.

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Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording

MRS Proceedings ◽

10.1557/proc-0996-h07-11 ◽

2007 ◽

Vol 996 ◽

Author(s):

Salvador Duenas ◽

Helena Castán ◽

Héctor García ◽

Luis Bailón ◽

Kaupo Kukli ◽

...

Keyword(s):

Electric Fields ◽

Electrical Characterization ◽

Charge Trapping ◽

Atomic Layer ◽

Localized States ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

High K ◽

Mos Structures

AbstractWe have carried out a comparison between flat-band transients displayed in metal-oxide-semiconductor (MOS) structures fabricated on several atomic layer deposited (ALD) high-k dielectric films: HfO2, ZrO2, Al2O3, Ta2O5, TiO2, and Gd2O3. The gate voltage as a function of time is recorded while keeping constant the capacitance at the initial flat band condition (CFB). Since samples are in darkness, under no electric fields and no charge-injection conditions, transients must be due to charge trapping of localized states produced by electrons (holes) coming from the semiconductor by tunnelling. The process is assisted by phonons and it is therefore thermally activated. The temperature-transient amplitude relation follows an Arrhenius plot which provides the thermal activation energy of soft-optical phonons. Finally, we describe the dependencies of the flat-band voltage on the setup bias history (accumulation or inversion) and the hysteresis sign (clockwise or counter-clockwise) of the capacitance-voltage (C-V) characteristics of MOS structures.

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Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures

MRS Proceedings ◽

10.1557/proc-830-d5.9 ◽

2004 ◽

Vol 830 ◽

Cited By ~ 1

Author(s):

Seiichi Miyazaki ◽

Taku Shibaguchi ◽

Mitsuhisa Ikeda

Keyword(s):

Visible Light ◽

Energy State ◽

Floating Gate ◽

Flat Band ◽

Displacement Current ◽

Light Illumination ◽

Flat Band Voltage ◽

Mos Capacitors ◽

Symmetric Pattern ◽

Visible Light Illumination

ABSTRACTWe have studied capacitance-voltage (C-V) and displacement current-voltage characteristics of MOS capacitors with Si nanocrystals embedded in the gate oxide as a floating gate in dark and under visible light illumination at room temperature to gain a better understanding of discrete charged states of the Si-dots floating gate. The Si-dots floating gate with a dot density of 2.8×1011cm-2 and an average dot size of 8nm was fabricated on ∼2.8nm-thick thermally-grown SiO2 as a tunnel oxide by the thermal decomposition of SiH4, and covered with 7.5nm-thick control oxide prepared by thermal oxidation of a-Si. C-V characteristics of Al-gate MOS capacitors on p-type and n-type Si(100) show unique hystereses due to the charging and discharging of the Si-dots floating gate with a symmetric pattern reflecting the Fermi level of the substrate, which enable us to rule out the contribution of traps with a specific energy state to the observed hystereses. For each of high-frequency C-V curves measured in dark, a single capacitance peak appears only around a flat-band voltage condition, which is attributed to the quick flat-band voltage shift caused by the collective emission of charges retaining in the Si-dots floating gate as confirmed from the corresponding displacement current peak. Under visible light illumination, another capacitance peak due to collective charge injection to the electrically neutral Si-dots floating gate becomes observable in the inversion condition governing the on-state of MOS FETs. Thus, the optimum bias conditions for dot-floating gate MOSFETs can be predicted from the capacitor characteristics measured under light illumination.

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Nanocrystallization of Anthocyanin Extract from Red-Fleshed Apple ′QN-5′ Improved Its Antioxidant Effect through Enhanced Stability and Activity under Stressful Conditions

Molecules ◽

10.3390/molecules24071421 ◽

2019 ◽

Vol 24 (7) ◽

pp. 1421 ◽

Cited By ~ 3

Author(s):

Xiang Zhang ◽

Heqiang Huo ◽

Xiaohong Sun ◽

Jun Zhu ◽

Hongyi Dai ◽

...

Keyword(s):

Storage Time ◽

Spherical Shape ◽

Average Diameter ◽

Anthocyanin Content ◽

Capacity Loss ◽

Transmission Electron ◽

Scavenging Capacity ◽

Alkaline Conditions ◽

Regular Spherical Shape ◽

Scavenging Rates

Red-flesh apples are known as functional fruits because of their rich anthocyanin. The anthocyanin content of the red flesh apple cultivar ′QN-5′ we bred can reach 361 mg·kg−1 (FW), and showed higher scavenging capacity to DPPH radicals, hydroxyl radicals, and superoxide anion radicals, with scavenging rates of 80.0%, 54.0%, and 43.3%, respectively. We used this particular anthocyanin-rich ′QN-5′ apple as material to examine how nanocrystallization affects the antixodiant effect of anthocyanin. The anthocyanin extract was encapsulated with biocompatible zein to form zein-anthocyanin nanoparticles (ZANPs). Transmission electron microscopy (TEM) scanning showed that ZANPs had a regular spherical shape with an average diameter size of 50–60nm. When the ratio of the zein and the anthocyanin was 1:0.5, the results suggested that the encapsulation efficiency (EE) of the ZANPs could reach as high as 92.8%, and that scavenging rate for DPPH radicals was increased from 87.1% to 97.2% compared to the non-nanocrystallized anthocyanin extract. Interestingly, treatment under alkaline conditions (pH 9.0), high temperature (90 °C), and a storage time of 7 days could decrease the scavenging capacity of the ZANPs for DPPH radicals, but this scavenging capacity loss for ZANPs was significantly lower than that observed in the non-nanocrystallized anthocyanin, suggesting the higher stability of ZANPs is caused by encapsulation. These results would provide a theoretical basis for the application of the anthocyanin in scavenging free radicals under stress conditions.

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Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.39.17 ◽

2016 ◽

Vol 39 ◽

pp. 17-33 ◽

Cited By ~ 7

Author(s):

Tamara Rudenko ◽

Sylvain Barraud ◽

Yordan M. Georgiev ◽

Vladimir Lysenko ◽

Alexei N. Nazarov

Keyword(s):

Experimental Data ◽

Threshold Voltage ◽

Carrier Mobility ◽

Doping Concentration ◽

Series Resistance ◽

Electrical Characterization ◽

Parameter Extraction ◽

Flat Band ◽

Flat Band Voltage ◽

Nanowire Transistors

This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold voltage, flat-band voltage, doping concentration, carrier mobility, and parasitic series resistance. The applicability and limitations of different methods are analyzed using numerical simulations and experimental data for planar and tri-gate nanowire JL transistors with various nanowire widths.

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Gold Nanoparticles Supported on SrTiO3 by Solution Plasma Sputter Deposition for Enhancing UV- and Visible-light Photocatalytic Efficiency

MRS Proceedings ◽

10.1557/opl.2013.729 ◽

2013 ◽

Vol 1509 ◽

Cited By ~ 4

Author(s):

Gasidit Panomsuwan ◽

Nobuyuki Zettsu ◽

Nagahiro Saito

Keyword(s):

Visible Light ◽

Au Nanoparticles ◽

Spherical Shape ◽

Average Diameter ◽

Sputter Deposition ◽

Transmission Electron ◽

One Step ◽

Blue Solution ◽

Photocatalytic Applications ◽

Visible Light Photocatalytic

ABSTRACTGold (Au) nanoparticles were synthesized and deposited on the perovskite SrTiO3 (STO) via a one-step solution plasma sputter deposition (SPSD) without any reducing reagents at ambient condition. Good dispersion of the Au nanoparticles deposited on the STO surface was clearly observed. The synthesized Au nanoparticles were well-crystallized with a spherical shape and preferably exhibited multiply twinned structure. An average diameter of Au nanoparicles was estimated to be 6.1 ± 1.4 nm by transmission electron microscopy. Enhanced photocatalytic activity was found for the Au-STO when compared to the pure STO, as investigated from the degradation of methylene blue solution under ultraviolet and visible light irradiation. The SPSD seems to be a rapid and facile approach to prepare the Au nanoparticles supported on the metal oxide for photocatalytic applications.

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Hydrothermal Synthesis of Carbon Quantum Dots from Persimmons as Probe for Determination of Ferric Ions

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19140 ◽

2021 ◽

Vol 21 (3) ◽

pp. 1728-1734

Author(s):

Yingte Wang ◽

Yujie Yang ◽

Xiaoyue Chang ◽

Rong Duan ◽

Yong Zhang

Keyword(s):

Quantum Dots ◽

Spherical Shape ◽

Average Diameter ◽

Carbon Quantum Dots ◽

Excitation Wavelength ◽

Blue Fluorescence ◽

Environment Friendly ◽

Transmission Electron ◽

Relative Standard

Local natural persimmons were used as a new precursor to synthesize carbon quantum dots (CQDs) by a brief and environment friendly strategy, hydrothermal method. The as-prepared CQDs were characterized by transmission electron microscopy, Fourier transform infrared spectroscopy, Ultraviolet-visible spectroscopy, as well as fluorescence spectrophotometer. The average diameter of CQDs was 2.5±0.5 nm with spherical shape and exhibited blue fluorescence with the maximum emission wavelength at 438 nm and excitation wavelength at 345 nm. The influences of pH and ionic strength on CQDs fluorescence were evaluated. Moreover, the CQDs were used for determination of Fe3+ by blue fluorescence quenching as the result of the interaction between Fe3+ and –OH, –COOH on the CQDs surfaces. The proposed CQDs displayed high selectivity and sensitivity of Fe3+ in comparison with other metal ions. Therefore, a good linear relationship was established with the Fe3+ concentration in the range of 0.6–400 μM. The correlation coefficient of the calibration curve was 0.996. The detection limit of the method was 0.56 μM. Eventually, the CQDs made from persimmons were used for determination of Fe3+ in actual water sample with satisfactory results and gave recoveries between 95.66% and 99.90%. The relative standard deviation was 1.20%–1.86%. The results demonstrated the potential towards diverse applications of the local persimmons.

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