Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording

2007 ◽  
Vol 996 ◽  
Author(s):  
Salvador Duenas ◽  
Helena Castán ◽  
Héctor García ◽  
Luis Bailón ◽  
Kaupo Kukli ◽  
...  
Keyword(s):  
Electric Fields ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Localized States ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
High K ◽  
Mos Structures

AbstractWe have carried out a comparison between flat-band transients displayed in metal-oxide-semiconductor (MOS) structures fabricated on several atomic layer deposited (ALD) high-k dielectric films: HfO2, ZrO2, Al2O3, Ta2O5, TiO2, and Gd2O3. The gate voltage as a function of time is recorded while keeping constant the capacitance at the initial flat band condition (CFB). Since samples are in darkness, under no electric fields and no charge-injection conditions, transients must be due to charge trapping of localized states produced by electrons (holes) coming from the semiconductor by tunnelling. The process is assisted by phonons and it is therefore thermally activated. The temperature-transient amplitude relation follows an Arrhenius plot which provides the thermal activation energy of soft-optical phonons. Finally, we describe the dependencies of the flat-band voltage on the setup bias history (accumulation or inversion) and the hysteresis sign (clockwise or counter-clockwise) of the capacitance-voltage (C-V) characteristics of MOS structures.

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 705-708 ◽  
Author(s):  
Marc Avice ◽  
Ulrike Grossner ◽  
Edouard V. Monakhov ◽  
Joachim Grillenberger ◽  
Ola Nilsen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Deep Level ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift ◽  
Layer Deposition

In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.

High-k MNOS-Like Stacked Dielectrics for Non-Volatile Memory Application

2016 ◽  
Vol 39 ◽  
pp. 121-133
Author(s):  
Larysa Khomenkova ◽  
Pascal Normand ◽  
Fabrice Gourbilleau ◽  
Abdelilah Slaoui ◽  
Caroline Bonafos
Keyword(s):  
Electrical Characterization ◽  
Charge Trapping ◽  
Flat Band ◽  
Carrier Injection ◽  
High K ◽  
Structural And Electrical Properties ◽  
Non Volatile Memory ◽  
High Resolution Tem ◽  
Mis Capacitors ◽  
Dielectric Structures

Charge-trapping memories such as SONOS and MONOS have attracted considerable attention as promising alternatives for next-generation flash memories due to dielectric layer’s scalability, process simplicity, power economy, operation versatility. Nevertheless, the continued miniaturization of the devices forces an application of high-k dielectrics. In this work high-k stacked dielectric structures based on the combination of Hf-based and SiNx materials were fabricated. Their structural and electrical properties versus deposition conditions are studied by means of FTIR-ATR and high-resolution TEM techniques. All samples demonstrated smooth surface (roughness below 1 nm) and abrupt interfaces between the different stacked layers. No crystallization of Hf-based layers was observed after annealing at 800°C for 30 min, demonstrating their amorphous nature and phase stability upon annealing. Electrical characterization was carried out for all samples through capacitance-voltage (C-V) measurements of MIS capacitors. Uniform C-V characteristics were measured along the samples for all stacks. Besides, significant flat-band hysteresis due to charging of the stacks caused by carrier injection from the substrate was observed for the structures with pure HfO2 layers.

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

2010 ◽  
Vol 97 (13) ◽  
pp. 132908 ◽  
Author(s):  
X. H. Zheng ◽  
A. P. Huang ◽  
Z. S. Xiao ◽  
Z. C. Yang ◽  
M. Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Metal Gate ◽  
High K

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

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