Thermoelectric Generators Made with Novel Lead Telluride Based Materials

2009 ◽  
Vol 1218 ◽  
Author(s):  
Chun-I Wu ◽  
Steven N Girard ◽  
Joseph Sootsman ◽  
Edward Timm ◽  
Jennifer Ni ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Short Circuit ◽  
Lead Telluride ◽  
Short Circuit Current ◽  
Nucleation And Growth ◽  
Thermoelectric Generators ◽  
Cold Side ◽  
Metal Electrodes ◽  
Thermoelectric Figure ◽  
P Type

AbstractFor the material (Pb0.95Sn0.05Te)1-x(PbS)x nanostructuring from nucleation and growth and spinodal decomposition were reported to enhance the thermoelectric figure of merit over bulk PbTe, producing ZT of 1.1 - 1.4 at 650 K for x = 0.08[1]. Thermoelectric modules made from (Pb0.95Sn0.05Te)1-x(PbS)x materials with various hot-side metal electrodes were fabricated and tested. Short circuit current was measured on unicouples of Pb0.95Sn0.05Te – PbS 8% (n-type) legs and Ag0.9Pb9Sn9Sb0.6Te20 (p-type) legs over 10 (A) for a hot side temperature of 870K, and a cold side of 300K. Hot pressed (Pb0.95Sn0.05Te)1-x(PbS)x materials were also investigated for module fabrication. Investigations of the electrical properties of hot-pressed (Pb0.95Sn0.05Te)1-x(PbS)x materials are presented along with the latest advancements in the fabrication and characteristics of modules based on the processing of these materials.

Novel Lead Telluride Based Thermoelectric Materials

2011 ◽  
Vol 1314 ◽  
Author(s):  
Chun-I Wu ◽  
Steven N. Girard ◽  
Joe Sootsman ◽  
Edward Timm ◽  
Eldon D. Case ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Powder Processing ◽  
Lead Telluride ◽  
Nucleation And Growth ◽  
Device Fabrication ◽  
Thermoelectric Figure Of Merit ◽  
Temperature Dependent ◽  
Thermoelectric Figure ◽  
Pulsed Electric Current

ABSTRACTPbTe-PbS materials are promising for thermoelectric power generation applications. For the composition of (Pb0.95Sn0.05Te)0.92(PbS)0.08 nanostructuring from nucleation and growth and spinodal decomposition has been reported along with thermal conductivity of approximately 1.1 W/m·K at 650 K [1]. Based on temperature-dependent measurements of electrical conductivity, thermopower, and thermal conductivity, the thermoelectric figure of merit, ZT, are ~1.5 at 650 K for cast ingots.To develop larger quantities of material for device fabrication, advancement in the synthesis, processing and production of (Pb0.95Sn0.05Te)0.92(PbS)0.08 is necessary. Powder processing of samples is a well-known technique for increasing sample strength, and uniformity. In this presentation, we show sample fabrication and processing details of pulsed electric current sintering (PECS) processed (Pb0.95Sn0.05Te)0.92(PbS)0.08 materials and their thermoelectric properties along with the latest advancements in the preparation of these materials.

Advances in thermoelectric (GeTe) x (AgSbTe2)100-x

2021 ◽  
Author(s):  
Hongxia Liu ◽  
Xinyue Zhang ◽  
Wen Li ◽  
Yanzhong Pei
Keyword(s):  
Band Structure ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Generators ◽  
Thermoelectric Figure ◽  
Promising Candidate ◽  
Thermoelectric Transport Properties ◽  
Electronic Performance ◽  
P Type ◽  
Strong Anharmonicity

Abstract The (GeTe) x (AgSbTe2)100-x alloys, also called TAGS-x in short, have long been demonstrated as a promising candidate for thermoelectric applications with successful services as the p-type leg in radioisotope thermoelectric generators for space missions. This largely stems from the complex band structure for a superior electronic performance and strong anharmonicity for a low lattice thermal conductivity. Utilization of the proven strategies including carrier concentration optimization, band and defects engineering, an extraordinary thermoelectric figure of merit, zT, has been achieved in TAGS-based alloys. Here, crystal structure, band structure, microstructure, synthesis techniques and thermoelectric transport properties of TAGS-based alloys, as well as successful strategies for manipulating the thermoelectric performance, are surveyed with opportunities for further advancements. These strategies involved are believed to be in principle applicable for advancing many other thermoelectrics.

OXYCHALCOGENIDES AS NEW EFFICIENT p-TYPE THERMOELECTRIC MATERIALS

2013 ◽  
Vol 06 (05) ◽  
pp. 1340007 ◽  
Author(s):  
CELINE BARRETEAU ◽  
LIN PAN ◽  
YAN-LING PEI ◽  
LI-DONG ZHAO ◽  
DAVID BERARDAN ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Parent Compound ◽  
Thermoelectric Figure ◽  
Medium Temperature ◽  
Temperature Range ◽  
The Past ◽  
Thermoelectric Conversion ◽  
New Directions ◽  
Wide Scale ◽  
P Type

During the past two years, we have underlined the great potential of p-type oxychalcogenides, with parent compound BiCuSeO , for thermoelectric applications in the medium temperature range (400–650°C). These materials, which do not contain lead and are less expensive than Te containing materials, exhibit large thermoelectric figure of merit, exceeding 1 in a wide temperature range, mainly due to an intrinsically very low thermal conductivity. This paper summarizes the main chemical and crystallographic features of this system, as well as the thermoelectric properties. It also gives new directions to improve these properties, and discuss the potential of these materials for wide scale applications in thermoelectric conversion system in the medium temperature range.

High-Thermoelectric Figure of Merit Realized in p-Type Half-Heusler Compounds: ZrCoSnxSb1-x

2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Heusler Compounds ◽  
Thermoelectric Figure ◽  
P Type

Solar Cell Contacts Using Nano-Sized Dispersions

1999 ◽  
Vol 581 ◽  
Author(s):  
Doug Schulz ◽  
R. Ribelin ◽  
X. Wu ◽  
K.M. Jones ◽  
R.J. Matson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spray Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Cdte Layer ◽  
Open Circuit ◽  
Alloy Formation ◽  
Current Densities ◽  
P Type ◽  
Open Circuit Voltages

ABSTRACTNano-sized dispersions have been employed as precursor inks for the spray deposition of contacts to both Si and CdTe materials. In the case of Si, nano-sized Al particles (nano-Al) were dispersed and spray deposited onto p-type Si. Annealing above the eutectic temperature causes alloy formation yielding a p+ layer with p ∼ 10−4 Ω•cm. For CdTe, nano-sized Te particles (nano-Te) were dispersed and sprayed onto CdTe/CdS/SnO2/glass heterostructures. Contact to the CdTe layer occurred during a 30 min anneal in He (T = 215 to 255 °C). These solar cells were finished by spin-coating the Te layer with Ag paint and subsequently annealing in air (100 °C / 1 h). This approach produces solar cells with open circuit voltages (Voc) from 720 to 800 mV, short circuit current densities (Jsc) from 18 to 20 mA/cm2 and efficiencies up to 10.3%. The performance of these cells was similar to those produced using the standard NREL contact.

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

Enhanced thermoelectric figure of merit in p-type Ag-doped ZnSb nanostructured with Ag3Sb

2013 ◽  
Vol 69 (5) ◽  
pp. 397-400 ◽  
Author(s):  
Ding-Bang Xiong ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type
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