Plasmonic Oscillations in Au Nano-rods Fabricated by Electron Beam Lithography

2010 ◽  
Vol 1248 ◽  
Author(s):  
Urcan Guler ◽  
Rasit Turan

AbstractLocalized Surface Plasmon Resonances (LSPR) in rod-shaped Gold (Au) nanoparticles patterned with Electron Beam Lithography (EBL) technique are observed via reflectance measurements. Resonance peaks corresponding to the principal axes of the nano-rods are shown to be affected by each other. Excitation of one of the peaks is found to result in a decrease in the peak intensity of the resonance through the other axis. Arrays of Au nanoparticles with constant width and thickness but increasing length are examined for further understanding of the effect. As the particle length increased from 70 nm to 300 nm, resonance peak wavelength shifted from 650 nm to 1200 nm. Total reflectance intensities of samples with varying principal axis dimensions obtained through the spectral region of interest are also examined to see the relation between contributing electrons and total amount of reflected intensity. Results corresponding to both polarized and unpolarized illumination of samples are presented together to gain better understanding of lowered reflectance peak intensities obtained from the latter case. Based on the results obtained so far, nano-sized metal rods are promising tools for optically switched intensity modulation in the visible and near-IR region.

2012 ◽  
Vol 3 ◽  
pp. 773-777 ◽  
Author(s):  
Fabian Enderle ◽  
Oliver Dubbers ◽  
Alfred Plettl ◽  
Paul Ziemann

For many applications it is desirable to have nanoparticles positioned on top of a given substrate well separated from each other and arranged in arrays of a certain geometry. For this purpose, a method is introduced combining the bottom-up self-organization of precursor-loaded micelles providing Au nanoparticles (NPs), with top-down electron-beam lithography. As an example, 13 nm Au NPs are arranged in a square array with interparticle distances >1 µm on top of Si substrates. By using these NPs as masks for a subsequent reactive ion etching, the square pattern is transferred into Si as a corresponding array of nanopillars.


2007 ◽  
Vol 601 (21) ◽  
pp. 5057-5061 ◽  
Author(s):  
G. Barbillon ◽  
J.-L. Bijeon ◽  
J. Plain ◽  
M. Lamy de la Chapelle ◽  
P.-M. Adam ◽  
...  

Author(s):  
L. D. Jackel

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.


2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.


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