Effect of Microstructure on the Sheet Resistance of Ion-Beam Deposited ZnO Thin Film

1988 ◽  
Vol 128 ◽  
Author(s):  
Saliman A. Isa ◽  
P. K. Ghosh ◽  
P. G. Kornreich
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Substrate Temperatures

ABSTRACTZnO thin films were deposited by ion-beam sputtering technique. Preliminary results show that the films are stoichiometric and crystalline in nature. The microstructure of ZnO films obtained depends very much on the process parameters. Among these parameters is the substrate temperature whose effect has been carefully examined.ZnO films were deposited with substrate temperatures ranging from 200°C to 350°C. We observed that the sheet resistance of the films varies with their microstructure. In this investigation, a sheet resistance of 6.6 Mega-ohms per square is measured on a dense film deposited at a substrate temperature of 325°C.We present in this paper a correlation between the film's microstructure and stoichiometry with some of it's electrical properties.

The effect of charged particles when preparing ZnO thin film by ion beam sputtering deposition

1988 ◽  
Vol 33-34 ◽  
pp. 1114-1119 ◽  
Author(s):  
Yoshihiko Suzuki ◽  
Tsutom Yotsuya ◽  
Katsumi Takiguchi ◽  
Masaaki Yoshitake ◽  
Soichi Ogawa
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Charged Particles ◽  
Zno Thin Film ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

The effect of Porosity of Metal Zinc Films on the Formation of ZnO Prepared by Thermal Oxidation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Liang-chiun Chao ◽  
Chung-chi Liau
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Zno Films ◽  
High Porosity ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Pl Intensity ◽  
Low Porosity

AbstractZnO thin films have been prepared by thermal oxidation of metal zinc films with different porosity. High and low porosity metal zinc films are prepared by DC magnetron sputtering and capillaritron ion beam sputtering, respectively. Near bandgap UV emission of ZnO thin films prepared from thermal oxidation of the low porosity film exhibit a maximum PL intensity after thermal oxidation at 410°C, while ZnO films prepared by thermal oxidation of the high porosity films exhibit a maximum PL intensity at oxidation temperature of 900°C. SEM micrographs indicate that ZnO prepared by thermal oxidation of low porosity films have a smooth surface morphology after thermal oxidation at 410°C, while ZnO prepared by thermal oxidation of high porosity zinc films exhibit a grain size of ∼ 800 nm after thermal oxidation at 1000°C.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Sputtering ◽  
Thin Film Thickness ◽  
Optical Thin Film ◽  
Beam Sputtering ◽  
Beam Parameters

Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering

2017 ◽  
Vol 25 (1) ◽  
pp. 21-27
Author(s):  
刘华松 LIU Hua-song ◽  
杨 霄 YANG Xiao ◽  
王利栓 WANG Li-shuan ◽  
姜玉刚 JIANG Yu-gang ◽  
季一勤 JI Yi-qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Ion Beam ◽  
Tantalum Oxide ◽  
Oxide Thin Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Ln-Ba-Cu-O Thin Film Deposited by Ion Beam Sputtering

1989 ◽  
pp. 527-531
Author(s):  
Tsutomu Yotsuya ◽  
Yoshihiko Suzuki ◽  
Soichi Ogawa ◽  
Hajime Kuwahara ◽  
Tetsuro Tajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Controlled thin-film deposition of α or β Ga2O3 by ion-beam sputtering

2020 ◽  
Vol 38 (6) ◽  
pp. 063412
Author(s):  
Martin Becker ◽  
Sebastian L. Benz ◽  
Limei Chen ◽  
Angelika Polity ◽  
Peter J. Klar ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Electrical Properties of Pulsed Laser Deposited ZnO Thin Films

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Films ◽  
Visible Absorption ◽  
Substrate Temperatures

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.

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