Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane

2015 ◽  
Vol 418 ◽  
pp. 52-56 ◽  
Author(s):  
Hideki Nakazawa ◽  
Daiki Suzuki ◽  
Tsugitada Narita ◽  
Kazuki Meguro ◽  
Masato Tsuchiya
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Pressure Chemical

Low Pressure Chemical Vapor Deposition of Silicon Carbide from Diethylsilane

1993 ◽  
Vol 140 (3) ◽  
pp. 851-854 ◽  
Author(s):  
J. M. Grow ◽  
R. A. Levy ◽  
Y. T. Shi ◽  
R. L. Pfeffer
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

1988 ◽  
Vol 131 ◽  
Author(s):  
Wei Lee ◽  
Leonard V. Interrante ◽  
Corrina Czekaj ◽  
John Hudson ◽  
Klaus Lenz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Organometallic Precursor ◽  
Pressure Chemical ◽  
By Products

ABSTRACTDense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide

1997 ◽  
Vol 82 (6) ◽  
pp. 2990-2995 ◽  
Author(s):  
C.-M. Zetterling ◽  
M. Östling ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
X. Tang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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