Surface Processes in CVD: Laser- and Low Energy Electron-Induced Decomposition of W(CO)6 on Si(111)-(7×7)

1988 ◽  
Vol 131 ◽  
Author(s):  
Cynthia M. Friend ◽  
J. R. Swanson ◽  
F. A. Flitsch

ABSTRACTThe decomposition of W(CO)6 adsorbed on Si(111)-(7×7) using low energy electrons and ultraviolet photons has been investigated under ultrahigh vacuum conditions. This work is motivated by a desire to understand the mechanism for laser- and electron-assisted chemical vapor deposition (CVD) of tungsten using volatile coordination complexes and to specifically understand the role of the surface in these processes. Both electron stimulated and photo-assisted decomposition of the adsorbed W(CO)6 are observed. No thermal decomposition of the W(CO)6 occurs under the conditions of these experiments, based on independent temperature programmed reaction experiments, ruling out the possibility of laser- or electron-induced heating as the cause of decomposition. Furthermore, the interaction of the W(CO)6 with the Si(111)-(7×7) surface is shown to be exceedingly weak based on the fact that the desorption energy is 9.46 ± 0.77 kcal/mol. Desorption of CO is induced during both ultraviolet photolysis and electron bombardment. Carbon monoxide is exclusively evolved during ultraviolet photolysis: no W-containing fragments are desorbed. During electron bombardment, a small amount of the W(CO)6 is desorbed, accounting for ∼10% of the desorption. In both cases, CO-containing W fragments remain on the surface after decomposition at low surface temperature. The remaining surface fragments do not undergo further photolysis at 308 nm but do react thermally. Competing desorption and dissociation of CO are thermally induced resulting in carbide and oxide impurities in the deposited material. The fact that strongly bound W(CO)x fragments are trapped on the surface is proposed as a limiting factor in the purity of tungsten deposits using the decomposition of W(CO)6.

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 108
Author(s):  
Paolo Sberna ◽  
Piet X. Fang ◽  
Changming Fang ◽  
Stoyan Nihtianov

The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by the chemical vapor deposition of amorphous boron on n-type crystalline silicon was a shallow p-n junction, although experimental results could not provide evidence for such a conclusion. Only recently, quantum-mechanics based modelling revealed the unique nature and the formation mechanism of this new junction. Here, we review the initiation and the history of understanding the a-B/c-Si interface (henceforth called the “boron-silicon junction”), as well as its importance for the microelectronics industry, followed by the scientific perception of the new junctions. Future developments and possible research directions are also discussed.


2001 ◽  
Vol 16 (1) ◽  
pp. 293-295 ◽  
Author(s):  
J. A. Gonzaález ◽  
O. L. Figueroa ◽  
B. R. Weiner ◽  
G. Morell

The effects of low-energy electron bombardment during the chemical vapor deposition of diamond were studied. The film growth was monitored in real time with in situ phase-modulated ellipsometry, in order to trigger the electron bombardment at different growth stages. Ex situ Raman spectroscopy and scanning electron microscopy were employed to evaluate the crystalline quality and the morphology of the grown films, respectively. The results indicated that triggering the electron bombardment after high-quality scattered diamond crystallites had formed results in finely grained smoother films of similar diamond yield and crystalline quality as those grown without bombardment. However, the electron bombardment deteriorates the film crystalline quality and the diamond yield when it was triggered from the start of deposition.


Author(s):  
G. G. Hembree ◽  
Luo Chuan Hong ◽  
P.A. Bennett ◽  
J.A. Venables

A new field emission scanning transmission electron microscope has been constructed for the NSF HREM facility at Arizona State University. The microscope is to be used for studies of surfaces, and incorporates several surface-related features, including provision for analysis of secondary and Auger electrons; these electrons are collected through the objective lens from either side of the sample, using the parallelizing action of the magnetic field. This collimates all the low energy electrons, which spiral in the high magnetic field. Given an initial field Bi∼1T, and a final (parallelizing) field Bf∼0.01T, all electrons emerge into a cone of semi-angle θf≤6°. The main practical problem in the way of using this well collimated beam of low energy (0-2keV) electrons is that it is travelling along the path of the (100keV) probing electron beam. To collect and analyze them, they must be deflected off the beam path with minimal effect on the probe position.


2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.


2012 ◽  
Vol 51 (05) ◽  
pp. 179-185 ◽  
Author(s):  
M. Wendisch ◽  
D. Aurich ◽  
R. Runge ◽  
R. Freudenberg ◽  
J. Kotzerke ◽  
...  

SummaryTechnetium radiopharmaceuticals are well established in nuclear medicine. Besides its well-known gamma radiation, 99mTc emits an average of five Auger and internal conversion electrons per decay. The biological toxicity of these low-energy, high-LET (linear energy transfer) emissions is a controversial subject. One aim of this study was to estimate in a cell model how much 99mTc can be present in exposed cells and which radiobiological effects could be estimated in 99mTc-overloaded cells. Methods: Sodium iodine symporter (NIS)- positive thyroid cells were used. 99mTc-uptake studies were performed after preincubation with a non-radioactive (cold) stannous pyro - phosphate kit solution or as a standard 99mTc pyrophosphate kit preparation or with pure pertechnetate solution. Survival curves were analyzed from colony-forming assays. Results: Preincubation with stannous complexes causes irreversible intracellular radioactivity retention of 99mTc and is followed by further pertechnetate influx to an unexpectedly high 99mTc level. The uptake of 99mTc pertechnetate in NIS-positive cells can be modified using stannous pyrophosphate from 3–5% to >80%. The maximum possible cellular uptake of 99mTc was 90 Bq/cell. Compared with nearly pure extracellular irradiation from routine 99mTc complexes, cell survival was reduced by 3–4 orders of magnitude after preincubation with stannous pyrophosphate. Conclusions: Intra cellular 99mTc retention is related to reduced survival, which is most likely mediated by the emission of low-energy electrons. Our findings show that the described experiments constitute a simple and useful in vitro model for radiobiological investigations in a cell model.


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