Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

First Study of Iron Self-Diffusion in Fe2O3 Single Crystals by SIMS

2005 ◽  
Vol 237-240 ◽  
pp. 277-281 ◽  
Author(s):  
Antônio Claret Soares Sabioni ◽  
Antônio Márcio J.M. Daniel ◽  
W.A.A. Macedo ◽  
M.D. Martins ◽  
Anne Marie Huntz ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stable Isotope ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Reliable Data ◽  
Oxygen Atmosphere ◽  
Self Diffusion ◽  
Secondary Ion

Iron bulk self-diffusion coefficients were measured in Fe2O3 single crystals using an original methodology based on the utilization of 57Fe stable isotope as iron tracer and depth profiling by secondary ion mass spectrometry (SIMS). The iron self-diffusion coefficients measured along c-axis direction, between 900 and 1100o C, in oxygen atmosphere, can be described by the following Arrhenius relationship: D(cm2/s)= 5.2x106 exp [-510 (kJ/mol)/RT], and are similar to reliable data available in the literature, obtained by means of radioactive techniques.

The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

2019 ◽  
Vol 954 ◽  
pp. 104-108
Author(s):  
Heng Yu Xu ◽  
Cai Ping Wan ◽  
Jin Ping Ao
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Annealing Conditions ◽  
N Concentration ◽  
Higher Temperature ◽  
Secondary Ion

We fabricated SiO2/4H-SiC (0001) MOS capacitors with oxidation temperature at 1350°C, followed by post-oxide-annealing (POA) in NO simply by the control of POA temperatures and times. A correlation between the reduction of interface state density and the increasing of N concentration at the interface has been indicated by C-ψs measurement and secondary ion mass spectrometry (SIMS). The SiO2/4H-SiC interface density decreased when POA temperature was elevated, and the sample annealed at 1300°C for 30min showed the lowest interface state density about 1.5×1012 cm-2eV-1 at Ec-E=0.3 eV when the N concentration is 11.5×1020 cm-3. Meanwhile, the SiO2 /4H-SiC interface annealed at 1200°C for 120min showed the highest N concentration at the 4H-SiC/SiO2 interface is 12.5×1020 cm-3, whereas the interface state density is 2.5×1012 cm-2eV-1 at Ec-E=0.3 eV higher than 1300°C for 30min. The results suggested that higher temperature POA might be much more efficiency in decreased the 4H-SiC MOS interface density with increasing the N area concentration.

Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

2005 ◽  
Vol 237-240 ◽  
pp. 998-1003
Author(s):  
Mudith S.A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Peter Ashburn ◽  
Arthur F.W. Willoughby
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficients ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Coated Surfaces ◽  
Secondary Ion ◽  
Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

Bulk Diffusion of Homovalent Atomic Probes of Scandium, Lanthanum and Thorium in Single Crystals of Tungsten

2010 ◽  
Vol 305-306 ◽  
pp. 1-13 ◽  
Author(s):  
S.M. Klotsman ◽  
G.N. Tatarinova ◽  
Alexander N. Timofeev
Keyword(s):  
Mass Spectrometry ◽  
Melting Point ◽  
Single Crystals ◽  
Periodic Table ◽  
Secondary Ion Mass Spectrometry ◽  
Volume Diffusion ◽  
Bulk Diffusion ◽  
Relaxation Energy ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

The volume diffusion of nonmagnetic homovalent atomic probes (APs) from the IIIB group of the periodic table of the elements (PTE)Sc, La, and Th in Whas been studied by the method of secondary ion mass spectrometry. The Arrhenius dependences have the following parameters: the coefficients DSc - (D0)Sc = (1.4  0.3)10-4 m2s-1 and QSc = (546±4) kJ/mole; the coefficients D¬La - (D0)La = (1.6  0.8)×10-6 m2s-1 and QLa = (41010) kJ/mole; and the coefficients DTh - (D0)Th = 4.4×10-6 m2s-1 and QTh = 447 kJ/mole. It has been found that the coefficients D5dAP(Tm)W of the bulk diffusion of transition 5d APs in W coincide at its melting point (Tm)W. The enthalpies, QWSc,La,Th, of the volume diffusion of nonmagnetic homovalent APs from the IIIB group of PTE increase linearly with decreasing relaxation volumes, , of these APs, which interact with vacancies in W. The sums, (Q + E)WSc,La,Th, of the bulk diffusion enthalpies, QWSc,La,Th, and the relaxation energy, (E)WSc,La,Th, of the environments of homovalent APs diffusing to W are nearly constant.

Impurity diffusion of Al in Ni single crystals studied by secondary ion mass spectrometry (SIMS)

1981 ◽  
Vol 64 (1) ◽  
pp. 187-194 ◽  
Author(s):  
W. Gust ◽  
M. B. Hintz ◽  
A. Loddwg ◽  
H. Odelius ◽  
B. Predel
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Secondary Ion Mass Spectrometry ◽  
Impurity Diffusion ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Формирование преципитатов в Si, имплантированном ионами -=SUP=-64-=/SUP=-Zn-=SUP=-+-=/SUP=- и -=SUP=-16-=/SUP=-O-=SUP=-+-=/SUP=-

2018 ◽  
Vol 52 (8) ◽  
pp. 827
Author(s):  
В.В. Привезенцев ◽  
Е.П. Kириленко ◽  
А.В. Горячев ◽  
А.В. Лютцау
Keyword(s):  
Mass Spectrometry ◽  
Surface Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Secondary Ion ◽  
Post Implantation ◽  
Scanning Electron

AbstractThe results of studying the surface Si layer and precipitate formation in CZ n -Si(100) samples sequentially implanted with ^64Zn^+ ions with a dose of 5 × 10^16 cm^2 and energy of 100 keV and ^16O^+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R _ p = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

Grain Boundary Diffusion in Cation-Doped Superplastic 3Y-TZP

2006 ◽  
Vol 45 ◽  
pp. 1626-1631
Author(s):  
Marek Boniecki ◽  
Rafał Jakieła ◽  
Zdzislaw Librant ◽  
Wladyslaw Wesolowski ◽  
Danuta Dabrowska ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Grain Boundary ◽  
Diffusion Coefficients ◽  
Boundary Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Tetragonal Zirconia ◽  
Grain Boundary Diffusion ◽  
Depth Profiles ◽  
Secondary Ion

The superplastic flow in tetragonal zirconia polycrystals stabilised 3mol% Y2O3 (3YTZP) is strongly affected by the dopant cations, which segregate at the grain boundary. It is proposed that this flow is controlled by grain boundary diffusion of Zr4+ ions and therefore the dopant cations should change the grain boundary diffusion. In order to prove this thesis the measurements of grain boundary diffusion coefficients were made using Hf4+ ions as tracer. Zirconia samples were doped with 1mol% of Al2O3, SiO2, MgO, MgAl2O4, GeO2 and TiO2. The tracer was deposited on the surface of the zirconia specimens by placing several drops of hafnium nitrate and then drying at 373 K. In this way, thin films of HfO 2 were obtained. The samples were heated in the range 1553 – 1773 K for 1 to 24 h. The concentration versus depth profiles were measured using secondary ion mass spectrometry (SIMS). Calculated hence grain boundary diffusion coefficients were several times bigger for doped samples than for pure 3Y-TZP samples.

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