Rapid Thermal Process Integration

1989 ◽  
Vol 146 ◽  
Author(s):  
I.D. Calder ◽  
A.A. Naem
Keyword(s):  
Chemical Reactions ◽  
Performance Optimization ◽  
Thermal Process ◽  
Process Integration ◽  
Thermal Processes ◽  
Rapid Thermal Process ◽  
Equilibrium Conditions ◽  
Thermal Budget ◽  
Process Sequence ◽  
Complete Process

ABSTRACTA manufacturable process must be designed with device integrity and reliability in mind. The optimum cumulative thermal budget should be chosen to achieve a shallow junction (for performance optimization) while minimizing junction leakage. At the same time the processing must satisfy reliability requirements such as good metal step coverage and oxide integrity. Interactions between thermal processes create problems such as repeated anneals, chemical reactions, pattern shifts, and non-equilibrium conditions, as well as opportunities for process simplification, such as greater flexibility in anneal and silicidation processes. In general RTP integration requires a redesign of the complete process sequence.

4H-SiC Defects Evolution by Thermal Processes

2017 ◽  
Vol 897 ◽  
pp. 181-184 ◽  
Author(s):  
Nicolò Piluso ◽  
Maria Ausilia di Stefano ◽  
Simona Lorenti ◽  
Francesco La Via
Keyword(s):  
Ion Implantation ◽  
Thermal Process ◽  
Defect Density ◽  
Annealing Process ◽  
Fine Tuning ◽  
Thermal Processes ◽  
Thermal Budget ◽  
Annealing Temperatures ◽  
Preliminary Annealing

4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind of defect, generated by implant and subsequent annealing, can be removed by an appropriate thermal budget, while others can increase. A fine tuning of thermal process parameters, temperature and timing, is useful to recover the crystallographic quality of the epilayer and increase the yield of the power device.

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Non-Prefabricated Nanocrystal Mesoporous TiO2-Based Photoanodes Tuned by A Layer-by-Layer and Rapid Thermal Process

2009 ◽  
Vol 2 (1) ◽  
pp. 265-269 ◽  
Author(s):  
Junchao Tao ◽  
Yan Sun ◽  
Meiying Ge ◽  
Xin Chen ◽  
Ning Dai
Keyword(s):  
Thermal Process ◽  
Mesoporous Tio2 ◽  
Layer By Layer ◽  
Rapid Thermal Process

Intermediate band materials obtained by rapid thermal process of Co-implanted silicon

2017 ◽  
Vol 209 ◽  
pp. 522-524 ◽  
Author(s):  
Jiren Yuan ◽  
Haibin Huang ◽  
Xinhua Deng ◽  
Mingang Gong ◽  
Cuicui Liu ◽  
...  
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Intermediate Band

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

2010 ◽  
Vol 28 (5) ◽  
pp. 1115-1121 ◽  
Author(s):  
Z. P. Shan ◽  
S. L. Gu ◽  
K. P. Wu ◽  
S. M. Zhu ◽  
K. Tang ◽  
...  
Keyword(s):  
Thermal Process ◽  
Visible Emission ◽  
Zno Films ◽  
Rapid Thermal Process ◽  
Doped Zno ◽  
Induced Changes

Growth Monitoring of Cu-Poor Prepared CuInS2 Thin Films

2001 ◽  
Vol 668 ◽  
Author(s):  
Ilka V. Luck ◽  
Jacobo Alvarez-Garcia ◽  
Lorenzo Calvo-Barrio ◽  
Axel Werner ◽  
Alejandro Perez-Rodriguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Process ◽  
Elemental Sulfur ◽  
Film Formation ◽  
Sample Surface ◽  
Growth Monitoring ◽  
Rapid Thermal Process ◽  
Intermediate Phases ◽  
Cuins2 Thin Films ◽  
Thin Film Formation

ABSTRACTThe CuInS2 thin film formation from a Cu/In precursor stack in the presence of elemental sulfur using a rapid thermal process under Cu-poor conditions has been studied. The process has been aborted at appropriate stages and the corresponding samples were investigated by XRD, Raman spectroscopy and SEM. The sulfurisation starts from elemental Cu and CuIn2. Elemental In and the binary phases Cu11In9 and Cu7In3 appear as intermediate phases. At the end of the sulfurisation the sample contains the ternary phases CuInS2 and CuIn5S8. CuS and β-In2S3 are detected by Raman spectroscopy at the sample surface and at distinct stages of the sulfurisation only. A difference in CuInS2 crystal quality is observed between the surface and the bottom of the samples.

Application and Verification Properties of the Thermal Process Model

2015 ◽  
Vol 669 ◽  
pp. 400-408
Author(s):  
Radoslav Krehel' ◽  
Slavko Pavlenko ◽  
Jozef Maščeník
Keyword(s):  
Simulation Model ◽  
Thermal Process ◽  
Process Model ◽  
Control Plot ◽  
Thermal Processes ◽  
Mathematical Function ◽  
Reasonable Time ◽  
Transient Events ◽  
Simulation Results

The article contains sub-results from analyses of processes in thermodiagnostics. In this paper we give examples of the response simulation model of thermal processes on the step pulse. It describes a method of applying diagnostics in machine production. The paper describes a method of prediction values of consistently transient events that can be described by a mathematical function. This article focuses on thermal process. This gives some reasonable time to take an appropriate control plot in the desired values of variables borders. The article contains results of the simulation and plot comparison of simulation results with the measured value.

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