4H-SiC Defects Evolution by Thermal Processes

4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind of defect, generated by implant and subsequent annealing, can be removed by an appropriate thermal budget, while others can increase. A fine tuning of thermal process parameters, temperature and timing, is useful to recover the crystallographic quality of the epilayer and increase the yield of the power device.

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Raman Spectra of Ion Implanted Graphite

MRS Proceedings ◽

10.1557/proc-7-425 ◽

1981 ◽

Vol 7 ◽

Cited By ~ 2

Author(s):

B.S. Elman ◽

H. Mazurek ◽

M.S. Dresselhaus ◽

G. Dresselhaus

Keyword(s):

Raman Spectroscopy ◽

Ion Implantation ◽

Raman Spectra ◽

Annealing Temperature ◽

Annealing Process ◽

Lattice Order ◽

Annealing Temperatures ◽

High Fluences ◽

Lattice Damage ◽

The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

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Rapid Thermal Process Integration

MRS Proceedings ◽

10.1557/proc-146-203 ◽

1989 ◽

Vol 146 ◽

Author(s):

I.D. Calder ◽

A.A. Naem

Keyword(s):

Chemical Reactions ◽

Performance Optimization ◽

Thermal Process ◽

Process Integration ◽

Thermal Processes ◽

Rapid Thermal Process ◽

Equilibrium Conditions ◽

Thermal Budget ◽

Process Sequence ◽

Complete Process

ABSTRACTA manufacturable process must be designed with device integrity and reliability in mind. The optimum cumulative thermal budget should be chosen to achieve a shallow junction (for performance optimization) while minimizing junction leakage. At the same time the processing must satisfy reliability requirements such as good metal step coverage and oxide integrity. Interactions between thermal processes create problems such as repeated anneals, chemical reactions, pattern shifts, and non-equilibrium conditions, as well as opportunities for process simplification, such as greater flexibility in anneal and silicidation processes. In general RTP integration requires a redesign of the complete process sequence.

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Dopant Enhanced Grain Growth During Crystallization of Amorphous Silicon Using Rapid Thermal Anealing

MRS Proceedings ◽

10.1557/proc-182-115 ◽

1990 ◽

Vol 182 ◽

Cited By ~ 2

Author(s):

R. Kakkad ◽

S. J. Fonash ◽

P. R. Howell

Keyword(s):

Ion Implantation ◽

Amorphous Silicon ◽

Grain Growth ◽

Thermal Budget ◽

Low Resistivity ◽

Annealing Temperatures ◽

Grain Sizes ◽

Precursor Material ◽

Low Thermal Budget

AbstractPECVD a-Si deposited at 250ºC on 7059 glass was used as precursor material to produce low resistivity large grain doped poly Si. The films doped in the range of 1020−1021 cm-3 with P during growth or by ion implantation wereannealed at 700ºC for times 2 to 5 minutes using RTA. A dopant enhanced grain growth was observed with grain sizes of the order of 3 μm for films of only 2000Å thickness. Resistivity as low as 6x10-4 Ω-cm and mobility as highas 34 cm2 /V-sec. were obtained using this low thermal budget process.These values are comparable to those obtained in the literature using significantly higher annealing temperatures.

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Damage Removal of Low Energy Ion Implanted BF2 Layers in Silicon

MRS Proceedings ◽

10.1557/proc-147-27 ◽

1989 ◽

Vol 147 ◽

Cited By ~ 2

Author(s):

E. Myers ◽

J. J. Hren

Keyword(s):

Free Surface ◽

Ion Implantation ◽

Thermal Processing ◽

Low Energy ◽

Silicon Substrates ◽

Dislocation Loops ◽

Tem Analysis ◽

Thermal Budget ◽

Damage Location ◽

Annealing Temperatures

AbstractRecent results indicate that thermal budgets associated with ion implantation induced end of range damage removal is affected by the presence of a free surface. Low energy BF2 implants (6 keV) were done into both single crystal and Ge preamorphized silicon substrates. Rapid thermal processing was used to study the residual end of range defect structure in the temperature range from 700 to 1000°C. 6 keV, 5E14 cm-2 BF2 implantation resulted in formation of continuous amorphous layers approximately 10 nm deep with a mean B penetration of approximately 7 nm. Conventional TEM analysis found the structures to be completely free of any spanning “hairpin” dislocations or stacking faults associated with the BF2 implant for all the annealing temperatures. For anneals between 700 °C and 900°C end of range damage formation resulted, but the size of the dislocation loops remained small. Annealing at 1000°C, 10 seconds showed no evidence of residual end of range damage. Location of the end of range damage region close to the free surface was found to decrease the thermal budget required for the removal of ion implantation induced radiation damage.

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Properties of P(VDF-TeFE) thin film formed by annealing process with electric field

MRS Proceedings ◽

10.1557/proc-1218-z05-20 ◽

2009 ◽

Vol 1218 ◽

Cited By ~ 1

Author(s):

Jong-Hyeon Jeong ◽

Chiharu Kimura ◽

Hidemitsu Aoki ◽

Masanori Okuyama ◽

Takashi Sugino

Keyword(s):

Thin Film ◽

Curie Point ◽

Spin Coating ◽

Thermal Process ◽

Annealing Process ◽

Film Properties ◽

Surface Stability ◽

Piezoelectric Polymer ◽

Coating Method

AbstractIn order to apply P(VDF-TeFE) piezoelectric polymer to micro-generator as a membrane, the polymer is deposited on a substrate by spin-coating method. In this process, some changes of properties and quality of the film are caused by a solvent which was used to dissolve the polymer granule. Since a solvent affects the film properties and surface stability, we have carried out the thermal process at a temperature higher than melting point. However, this thermal process due to a temperature higher than Curie point of the polymer causes a falling-off in electrical properties. In this paper, we have studied a method to prevent a falling-off in electric properties of P(VDF-TeFE) film even though the film is annealed at a temperature higher than Curie point.

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INFLUENCE OF FORCED CONVECTION IN LIQUID INSIDE THE TIN ON DURATION OF STERILIZATION IN THE COURSE OF FISH PROCESSING

VESTNIK OF ASTRAKHAN STATE TECHNICAL UNIVERSITY SERIES FISHING INDUSTRY ◽

10.24143/2073-5529-2017-1-137-144 ◽

2017 ◽

pp. 137-144

Author(s):

Gennadiy Valentinovich Alexeev ◽

Elena Igorevna Verboloz

Keyword(s):

High Temperature ◽

Liquid Phase ◽

Forced Convection ◽

Thermal Process ◽

Processing Time ◽

Fish Processing ◽

Study Results ◽

Equipment Modernization ◽

Bottom To Top

The article focuses on the process of intensive mixing of liquid phase in the tin during high-temperature sterilization, i.e. sterilization when temperature of the heat carrier reaches 150-160°C. It has been stated that for intensification of the thermal process during sterilization of tinned fish with liquid filling it is preferable to turn a tin from bottom to top. This operation helps to increase the driving power of the process and to shorten warming time. Besides, high-temperature sterilization carried out according to experimental modes, where the number of tin turnovers is calculated, greatly shortens processing time and improves quality of the product. In this case there is no superheating, all tins are evenly heated. The study results will contribute to equipment modernization and to preserving valuable food qualities.

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Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.110-116.1094 ◽

2011 ◽

Vol 110-116 ◽

pp. 1094-1098

Author(s):

Haleh Kangarlou ◽

Mehdi Bahrami Gharahasanloo ◽

Akbar Abdi Saray ◽

Reza Mohammadi Gharabagh

Keyword(s):

Room Temperature ◽

Structural Changes ◽

Annealing Temperature ◽

Annealing Process ◽

Oxygen Flow ◽

Glass Substrates ◽

Annealing Temperatures ◽

Titanium Thin Films ◽

Deposition Angle ◽

Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

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Experimental Investigation on Micro Deep Drawing of Stainless Steel Foils with Different Microstructural Characteristics

Chinese Journal of Mechanical Engineering ◽

10.1186/s10033-021-00556-5 ◽

2021 ◽

Vol 34 (1) ◽

Author(s):

Jingwei Zhao ◽

Tao Wang ◽

Fanghui Jia ◽

Zhou Li ◽

Cunlong Zhou ◽

...

Keyword(s):

Stainless Steel ◽

Deep Drawing ◽

Annealing Temperature ◽

Localized Deformation ◽

Microstructural Characteristics ◽

Height Profile ◽

Annealing Temperatures ◽

Micro Deep Drawing ◽

Profile Distribution

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.

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Optical Waveguide Formation by Ion Implantation of Ti or Ag

MRS Proceedings ◽

10.1557/proc-100-311 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

D. B. Poker ◽

D. K. Thomas

Keyword(s):

Ion Implantation ◽

Concentration Profile ◽

Optical Waveguides ◽

Annealing Temperature ◽

Solid Phase ◽

Effective Means ◽

Complete Removal ◽

Solid Phase Epitaxy ◽

Annealing Temperatures ◽

Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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