Formation of Insulating Layers in GaAs-Aigaas Heterostructures

1989 ◽  
Vol 148 ◽  
Author(s):  
W. S. Hobson ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
A. E. Von Neida
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Thermal Activation Energy ◽  
High Resistivity ◽  
Thermally Stable ◽  
Damage Compensation ◽  
A Value ◽  
First Case ◽  
Deep Donor ◽  
P Type

ABSTRACTWe describe two methods for producing thermally stable high resistivity layers in GaAs-AlGaAs heterostructures. These rely on the interaction of implanted ions with dopant impurities already present in a buried layer in the heterostructure. In the first case, oxygen implanted at a concentration above that of the acceptors in p-type GaAs is shown to create thermally stable, highresistivity material only in the case of Be-doping in the GaAs. The effect is not seen for Mg-, Znor Cd-doping. Similarly there is no apparent interaction of 0 with n-type dopants (S or Si). The Be-O complex in p-type GaAs is a deep donor, creating material whose sheet resistivity shows a thermal activation energy of 0.59 eV. In the second case oxygen implantation into n+ AlGaAs, followed by annealing above 600°C, creates a deep acceptor level that compensates the shallow donors in the material. Temperature dependent Hall measurements show the resistivity of the compensated AlGaAs has a thermal activation energy of 0.49 eV, in contrast to a value of 0.79 eV for non-induced damage compensation.

Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface

2011 ◽  
Vol 178-179 ◽  
pp. 233-242 ◽  
Author(s):  
Anton Bondarenko ◽  
Oleg Vyvenko ◽  
Iliya Kolevatov ◽  
Ivan Isakov ◽  
Oleg Kononchuk
Keyword(s):  
Activation Energy ◽  
Band Gap ◽  
Thermal Activation ◽  
Electronic States ◽  
Luminescent Properties ◽  
Thermal Activation Energy ◽  
Enhanced Luminescence ◽  
Valence Bands ◽  
P Type ◽  
Dislocation Related Luminescence

The dislocation-related luminescence (DRL) in the vicinity of D1 band (0.8 eV) in hydrophilically bonded n- and p-type silicon wafers is investigated by means of recently developed pulsed trap refilling enhanced luminescence technique (Pulsed-TREL). The shallow and deep dislocation related electronic states in both upper and lower part of the band gap are determined and characterized by means of DLTS. Among those traps we have established ones which directly participate in D1 DRL. We have shown that D1 luminescence goes via shallow dislocation related states (SDRS) located close to the conduction and valence bands with thermal activation energy of about 0.1 eV whereas deep levels do not participate in D1 DRL. The model explaining the fact how the 0.8 eV luminescence may go through levels which interlevel energy is at least 0.97 eV in terms of Coulomb interaction between ionized SDRS is suggested.

Investigation of Resistivity Distributions in CdTe Crystals by Time Dependent Charge Measurements (TDCM)

1995 ◽  
Vol 378 ◽  
Author(s):  
C. Eiche ◽  
W. Joerger ◽  
M. Fiederle ◽  
R. Schwarz ◽  
M. Salk ◽  
...  
Keyword(s):  
Activation Energy ◽  
Spatial Variation ◽  
Temperature Dependence ◽  
Thermal Activation ◽  
Radial Direction ◽  
Thermal Activation Energy ◽  
Time Dependent ◽  
Resistivity Measurements ◽  
Spatially Resolved ◽  
Deep Donor

AbstractSpatially resolved resistivity measurements of CdTe crystals doped with Titanium (Ti) and Vanadium (V) were performed. From the temperature dependence of the resistivity the spatial variation of the thermal activation energy was deduced. Variations in axial as well as radial direction were observed and qualitatively explained by a combined segregation and compensation model. It is based on the deep donor levels of Ti and V at 0.95 eV below the conduction band.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

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