Kinetics and Thermodynamics of Amorphous Silicide Formation in Nickel/Amorphous-Silicon Multilayer Thin Films

1989 ◽  
Vol 148 ◽  
Author(s):  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. de Avillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Kinetic Analysis ◽  
Amorphous Silicon ◽  
Nickel Silicide ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Kinetic Barriers

ABSTRACTCross-sectional transmission and scanning transmission electron microscopy and thermodynamic and kinetic analysis have been used to characterize amorphous and crystalline nickel silicide formation in nickel/amorphous-silicon multilayer thin films. An amorphous-nickelsilicide layer was formed between the nickel and amorphous-silicon layers during deposition. Heating caused crystalline Ni2Si to form at the nickel/amorphous-nickel-silicide interface. The composition of the amorphous-siicide was determined to be approximately 1 Ni atom to 1 Si atom. Thermodynamic analysis indicates that amorphous-nickel-silicide could be in equilibrium with nickel and amorphous-silicon if there were kinetic barriers to the formation of the crystalline silicides. Kinetic analysis indicates that the “nucleation surface energies” of the crystalline silicides, other than Ni3Si, must be 1.6 to 3.0 times larger than that of amorphous-nickel-silicide.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/Amorphous-Silicon Multilayer Thin Films

1990 ◽  
Vol 187 ◽  
Author(s):  
C. V. Thompson ◽  
L. A. Clevenger ◽  
R. DeAvillez ◽  
E. Ma ◽  
H. Miura
Keyword(s):  
Amorphous Silicon ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Scanning Calorimetry ◽  
Crystalline Phases ◽  
X Ray ◽  
Calorimetric Measurements ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Original Metal

AbstractFormation of intermetallic phases upon heating of films composed of alternating layers of metal and amorphous silicon has been studied using power-compensated differential scanning calorimetry, crosssectional transmission electron microscopy, and thin film x-ray diffractrometry. Results for Ni/amorphous-Si (Ni/a-Si), Ti/a-Si, V/a- Si, and Co/a-Si are reviewed. In the first three cases, an amorphous silicide is the first phase to form. Further heating leads to thickening of the amorphous silicide and eventually to formation and growth of layers of crystalline silicides. In the case of Co/a-Si multilayer films, a crystalline silicide (CoSi) appears to be the first phase to form. In these systems calorimetric measurements suggest that there are barriers to nucleation of the crystalline phases, even though the energy reduction that would accompany their formation from pure components is large. It is suggested that interdiffusion may precede the formation of new phases at the original metal/a-Si interfaces, resulting in a significant decrease in the driving force for nucleation of the crystalline phases.

Microstructure Evolution During Solid-State Reactions in Polycrystalline Nb/Al and Ti/Ai Multilayer Thin-Films

1999 ◽  
Vol 562 ◽  
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
D. T. Carpenter ◽  
C. Lavoie ◽  
C. Cabral ◽  
...  
Keyword(s):  
Thin Films ◽  
Microstructure Evolution ◽  
Metastable Phase ◽  
Scanning Transmission Electron Microscope ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTThe microstructural changes that occur during the reaction of sputter-deposited Nb/Al and Ti/Al multilayer thin-films with bilayer thicknesses ranging from 10 nm to 333 nm have been studied. The films were deposited with an overall stoichiometry of XAl3 (X = Nb,Ti) and subsequently annealed to different stages of the reaction in a differential scanning calorimeter (DSC). Data obtained from cross-sectional transmission electron microscopy (XTEM), and in situ synchrotron X-ray diffraction (XRD) experiments have provided evidence for a two-stage reaction mechanism for the formation of NbAl3. Microscopy results from a film with a bilayer period of 333 nm showed a microstructure that was consistent with two-dimensional growth in the plane of the interface. A uniform, 10 nm thick continuous layer of the product phase was formed followed by growth normal to the interface that initially consisted of larger, faceted grains. By the end of the reaction, an equiaxed NbAl3 grain structure was observed. High resolution elemental mapping using a scanning transmission electron microscope (STEM) revealed penetration of Nb into the Al layer and enhanced growth in regions where Al grain boundaries intersected the interface. Characterization of microstructure evolution in the Ti/Al system was complicated by the formation of two metastable structures consisting of cubic Ll2 followed by tetragonal DO23, and finally the equilibrium, tetragonal DO22 structure. However, the metastable phase transition temperatures were clearly isolated using the in situ XRD technique.

scholarly journals Thin Ni Silicide Formation by Low Temperature-Induced Metal Atom Reaction with Ion Implanted Amorphous Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Yu.N. Erokhin ◽  
B. K. Patnaik ◽  
S. Pramanick ◽  
F. Hong ◽  
C. W. White ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Silicon Layer ◽  
Amorphous Layer ◽  
Vacuum Furnace ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Silicon Area ◽  
Transmission Electron ◽  
Silicide Growth

ABSTRACTWe have extended our recent work [1,2] on buried suicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si+ ion implantation has been investigated at temperature ≤400 °C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), X-ray diffraction and four-point-probe measurements were used to determine the structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360 °C for 8 hours followed by an additional step at 400 °C for one hour produces a continuos NiSi2 layer with a resistivity 44 μΩ cm.

Deposition Rate Effect on Critical Thickness of BaTiO3 Epitaxial Thin Film Grown on SrTiO3 (001)

2007 ◽  
Vol 1034 ◽  
Author(s):  
Masanori Kawai ◽  
Daisuke Kan ◽  
Seiichi Isojima ◽  
Hiroki Kurata ◽  
Seiji Isoda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Critical Thickness ◽  
High Deposition Rate ◽  
Misfit Dislocations ◽  
Epitaxial Thin Films ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractBaTiO3/SrTiO3(001) epitaxial thin films were prepared at various growth rates by pulsed laser deposition, and their heterostructures were evaluated by synchrotron x-ray diffraction measurements and cross-sectional scanning transmission electron microscopy observations. In a film grown at a low deposition rate (0.01 nm/s), misfit dislocations are found near the interface and a fully relaxed BaTiO3 thin film grows epitaxially on the substrate. On the other hand, a film grown at a high deposition rate (0.04 nm/s) consists of strained and relaxed BaTiO3 lattices. Our results showed that the critical thickness of BaTiO3/SrTiO3(001) epitaxial thin films can be controlled by the deposition rate and that the critical thickness increases with increasing the deposition rate, and by adjusting the deposition rate we were able to prepare epitaxial thin films consisting of fully strained BaTiO3, partially strained BaTiO3 or fully relaxed BaTiO3. We have also achieved the growth controlling of BaTiO3 thin films on SrTiO3(001) substrates with SrRuO3 bottom electrode layer.

ChemInform Abstract: Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/ Amorphous-Silicon Multilayer Thin Films

ChemInform ◽  
2010 ◽  
Vol 22 (37) ◽  
pp. no-no
Author(s):  
C. V. THOMPSON ◽  
L. A. CLEVENGER ◽  
R. DEAVILLEZ ◽  
E. MA ◽  
H. MIURA
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Kinetics And Thermodynamics

Silicide Formation by Pulsed Excimer Laser Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
Connie Lew ◽  
Michael O. Thompson
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Interface Reaction ◽  
Silicide Formation ◽  
Metal Interface ◽  
Excimer Laser Annealing ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Si Films

AbstractSilicide formation may occur at the interface of metal and a-Si films upon annealing with a pulsed excimer laser (XeCl 308 nm; 30 ns). During laser-induced melting, the melt front reaches the Si/metal interface, where liquid phase kinetics allow reaction to occur to form a silicide, despite the <100 ns time-scale. It is thought that silicide reaction would occur if TM, metal ≍ TM, a-Si (1480 ± 50K). The a-Si/metal film stacks that have been investigated include a-Si/Al/Cr, a-Si/Ti, and a-Si/W on thermally oxidized Si. Samples were laser-annealed at varying energy densities in order to determine the onset of melt, and the fluence at which Si/metal interface reaction and film ablation occurs. Rutherford backscattering (RBS), optical inspection, cross-sectional scanning transmission electron microscopy (STEM), as well as parallel and serial electron energy loss spectroscopy (EELS) were used to analyze the films. For the a-Si/Al/Cr and a-Si/W films, no reaction is observed at the Si/metal interface. With a-Si/Ti, intermixing of Si and Ti at the interface is observed, as indicated by RBS and parallel EELS analysis. Laser annealing at higher fluences and further characterization is needed to determine if this mechanism does allow for silicide reaction to take place.

Metal Induced Crystallization of Amorphous Silicon Thin Films

1992 ◽  
Vol 279 ◽  
Author(s):  
T. Hempel ◽  
O. Schoenfeld ◽  
P. Veit
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Near Infrared ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
State Diffusion ◽  
Needle Morphology ◽  
Scanning Transmission

ABSTRACTThe crystallization behaviour of Ni doped magnetron co-sputtered amorphous silicon thin films (MSP-a-Si(Ni)) has been investigated by means of near infrared-visible-ultraviolet (NIR-VIS-UV) transmission spectroscopy, transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Using the change in optical transmission spectra of crystallized a-Si(Ni) thin films the crystallization kinetics is described. At the crystallization frontier a needle morphology of single crystals is observed with STEM, which is followed by solid state diffusion of nickel through the amorphous matrix. Using a long term thermal treatment we have studied the formation of expansed monocrystalline networks.

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