Direct Measurement of the Mobiuty-Lifetime Product of Holes and Electrons in an Amorphous Silicon P-I-N Cell

1989 ◽  
Vol 149 ◽  
Author(s):  
Richard. S. Crandall ◽  
Kyle Sadlon ◽  
Jeffrey Kalina ◽  
Alan E. Delahoy
Keyword(s):  
Amorphous Silicon ◽  
Field Model ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Charge Collection ◽  
Uniform Field ◽  
Drift Length ◽  
Direct Measurements ◽  
Hydrogenated Amorphous ◽  
Photovoltaic Behavior

ABSTRACTDirect measurements of the electron and hole mobility-lifetime products, μτ, on a 10μm thick hydrogenated amorphous silicon (a-Si:H) pi- n solar cell are presented. The μτ products, determined from charge collection using strongly absorbed light are μτ|h = 2.2 × 10−8cm2V−1 and μτ|e = 3.0 × 10−7cm2V−1, for holes,and electrons, respectively. Measurements of the drift length, ld = μτ|e + μτ|h, using uniformly absorbed light and analyzed using the uniform field model,1 give ld = 2.9 × 10−7 cm2 V−1 s−1. These results are the first experimental evidence that the carrier with the larger, μτ product determines the photovoltaic behavior. Evidence for space charge limited transport of photogenerated holes is also be presented.

Boron doping in a-SiO:H,

2014 ◽  
Vol 92 (7/8) ◽  
pp. 586-588 ◽  
Author(s):  
Y. Kitani ◽  
T. Maeda ◽  
S. Kakimoto ◽  
K. Tanaka ◽  
R. Okumoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Boron Doping ◽  
Type A ◽  
Dark Conductivity ◽  
Wide Range ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Oxygen

Boron-doping characteristics in hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility.

The Movement of Mobility Edges in Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
S. Lee ◽  
D. Heller ◽  
C. R Wronski
Keyword(s):  
Amorphous Silicon ◽  
Electron Mobility ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
The Other ◽  
High Quality ◽  
Electrical Field ◽  
Mobility Edge ◽  
Internal Photoemission ◽  
Hydrogenated Amorphous

ABSTRACTInternal photoemission of both electrons and holes is used to investigate the movement of the mobility edges in high quality intrinsic, undoped hy-drogenated amorphous silicon (a-Si:H) with temperature and electrical field. The electron mobility edge is found to move up in energy by ∼40meV between 298K and 120K. On the other hand, the hole mobility edge remains essentially unchanged between 298K and 160K. The injection (and collection) of photoemitted holes is less efficient than that for electrons and in the films studied could not be measured below 160K.

scholarly journals Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
S. Dinca ◽  
G. Ganguly ◽  
Z. Lu ◽  
E. A. Schiff ◽  
V. Vlahos ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Valence Band ◽  
Displacement Field ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Insight Into

AbstractWe present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10-9 cm2/V), hole mobilities reach values as large as 0.01 cm2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

scholarly journals Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon

2014 ◽  
Vol 90 (10) ◽  
Author(s):  
Eric Johlin ◽  
C. B. Simmons ◽  
Tonio Buonassisi ◽  
Jeffrey C. Grossman
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Atomic Structures ◽  
Hydrogenated Amorphous

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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