Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Valence band structure of hydrogenated amorphous silicon-carbon alloys studied by photoelectron spectroscopy

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 947-949 ◽  
Author(s):  
Yoshifumi Katayama ◽  
Toshikazu Shimada ◽  
Keisuke L.I. Kobayashi ◽  
Chang-gen Jiang ◽  
Hiroshi Daimon ◽  
...  
Keyword(s):  
Band Structure ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Valence Band Structure ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor

1996 ◽  
Vol 35 (Part 1, No. 10) ◽  
pp. 5342-5345
Author(s):  
Guang-pu Wei ◽  
Wen-biao Wu ◽  
Takashi Kita ◽  
Hiroshi Nakayama ◽  
Taneo Nishino ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
Double Heterojunction ◽  
Hydrogenated Amorphous

Conduction and Valence Band Offsets at the Hydrogenated Amorphous Silicon-Carbon/Crystalline Silicon Interface Via Capacitance Techniques

1993 ◽  
Vol 297 ◽  
Author(s):  
John M. Essick ◽  
Richard T. Mather ◽  
Murray S. Bennett ◽  
James Newton
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Valence Band ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thick Layer ◽  
Band Offset ◽  
Band Offsets ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Heterostructure Schottky diode samples each composed of a sub-micron thick layer of intrinsic hydrogenated amorphous silicon-carbon (a-Si1−xCx:H) deposited on an n-type crystalline silicon (c-Si) substrate are used to measure the a-Si1−xCx:H/c-Si band offsets via junction capacitance techniques. The samples range in carbon concentration from x=0.0−0.3. First, a thermally activated capacitance step due to the response of defects at the amorphous/crystalline interface is evident in capacitance vs. temperature spectra taken on all these samples. The bias-dependence of this step’s activation energy provides a direct measure of the a-Si1−xCx:H/c-Si interface potential as a function of c-Si depletion width in each sample. By application of Poisson’s equation, we find that the a-Si1−xCx:H/c-Si conduction band offset ΔEc. increases from 0.00 to 0.10 eV as x increases from 0.00 to 0.26. Second, while under reverse-bias at low temperature, we optically pulsed each sample with c-Si band-gap light to create trapped holes at the a-Si1−xCx:H/c-Si valence band offset ΔEV. By noting the threshold for the subsequent optical release of these trapped holes by sub-band gap light, we found that ΔEV increases from 0.67 to ≥0.83 eV as x increases from 0.00 to 0.26.

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