Laser Patterning and Electrical Properties of Submicron Lines of Y-Ba-Cu-O

1989 ◽  
Vol 158 ◽  
Author(s):  
J. P Zheng ◽  
Q. Y. Ying ◽  
H. S. Kim ◽  
D. Bhattacharya ◽  
D. T. Shaw ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Critical Current ◽  
Laser Deposition ◽  
Direct Laser Writing ◽  
Laser Patterning ◽  
Post Annealing ◽  
Direct Laser ◽  
Current Densities

ABSTRACT0.6 µm-wide lines of high Tc Y-Ba-Cu-O have been fabricated by direct laser writing on mirror-like thin films which were grown by laser deposition without post annealing. Laser ablation etching had no effect on the Tc and Jc until the lines were < 1µm wide. The 0.6 µm-wide strip showed some degradation of Tc and Jc. The critical current densities for these patterned lines were measured to be ∼5×106 A/cm2 at 50 K.

High Rate Growth of YBa2Cu3O7-x Thin Films using Pulsed Excimer Laser Deposition

1990 ◽  
Vol 191 ◽  
Author(s):  
R. E. Muenchausen ◽  
X. D. Wu ◽  
S. Foltyn ◽  
R. C. Estler ◽  
R. C. Dye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Rate ◽  
High Quality ◽  
Deposition Rates ◽  
Rocking Curve ◽  
X Ray ◽  
Current Densities

ABSTRACTWe report here on the pulsed laser deposition of high quality, superconducting, 200 nm thick films of YBa2Cu3O7-x at rates approaching 15 nm/s. Film crystallinity and electrical properties were studied as a function of deposition rate from 0.1 to 14.5 nm/s. Though some degradation in the film crystallinity is observed by RBS channeling and X-ray rocking curve measurements, critical current densities (Jc = 4 × 106 A/cm2, 77 K, B = 0) are effectively unchanged in going to the higher deposition rates.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

scholarly journals STUDY OF FILMS OF TRANSITION METALS AS MATERIALS FOR LASER NANOSTRUCTURING

2021 ◽  
Vol 8 ◽  
pp. 241-247
Author(s):  
Roman I. Kuts ◽  
Victor P. Korolkov ◽  
Vladimir N. Khomutov ◽  
Anatoly I. Malyshev ◽  
Sergey L. Mikerin
Keyword(s):  
Thin Films ◽  
Transition Metals ◽  
Fused Silica ◽  
Point Of View ◽  
Direct Laser Writing ◽  
Periodic Nanostructures ◽  
Laser Writing ◽  
Oxide Nanostructures ◽  
Direct Laser ◽  
Silica Substrates

This paper presents the results of a study of direct laser writing on thin films of transition metals (Hf, Ti, Zr, Ta, V). The films were deposited on fused silica substrates. A comparison of laser writing on the indicated films is carried out from the point of view of the presence of contour writing. As it was proved earlier, when writing on zirconium films, contour writing leads to formation of periodic nanostructures with a period equal to the writing step (250-500 nm). Materials were identified that are promising from the point of view of writing oxide nanostructures for the further formation of the diffraction phase microrelief of DOEs.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

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