High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds

1992 ◽  
Vol 9 (8) ◽  
pp. 444-447 ◽  
Author(s):  
Wang Wanlu ◽  
Gao Jinying ◽  
Liao Kejun
Keyword(s):  
Growth Rate ◽  
Organic Compounds ◽  
Diamond Films ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma

Morphology of Diamond Films Grown by DC Plasma Jet CVD

1989 ◽  
Vol 162 ◽  
Author(s):  
Kazuaki Kurihara ◽  
Ken-Ichi Sasaki ◽  
Motonobu Kawarada ◽  
Nagaaki Koshino
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma ◽  
Synthesis Conditions ◽  
Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

scholarly journals Trial of Diamond Synthesis with High-Growth Rate by DC Plasma CVD Using a Diamond Cathode.

1999 ◽  
Vol 50 (7) ◽  
pp. 650-651
Author(s):  
Toshihide MIKAMI ◽  
Yutaka ISHIKAWA ◽  
Hiroshi YAMANAKA ◽  
Yoichi HIROSE
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Plasma Cvd ◽  
Dc Plasma

High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

2001 ◽  
Vol 66 (1-4) ◽  
pp. 283-288 ◽  
Author(s):  
Koji Endo ◽  
Masao Isomura ◽  
Mikio Taguchi ◽  
Hisaki Tarui ◽  
Seiichi Kiyama
Keyword(s):  
Growth Rate ◽  
Crystalline Silicon ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

2010 ◽  
Vol 443 ◽  
pp. 510-515 ◽  
Author(s):  
Hung Yin Tsai ◽  
Chih Cheng Chang ◽  
Chih Wei Wu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Hot Filament

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

Growth of high-quality homoepitaxial CVD diamond films at high growth rate

2002 ◽  
Vol 235 (1-4) ◽  
pp. 287-292 ◽  
Author(s):  
Tokuyuki Teraji ◽  
Satoshi Mitani ◽  
Chunlei Wang ◽  
Toshimichi Ito
Keyword(s):  
Growth Rate ◽  
Diamond Films ◽  
High Growth ◽  
Cvd Diamond ◽  
High Growth Rate ◽  
High Quality

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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