A Tem Investigation of Secondary Dislocations in Grain Boundaries in Germanium

1989 ◽  
Vol 163 ◽  
Author(s):  
M. Griss ◽  
M. Seibt ◽  
H.J. Möller
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Low Energy ◽  
Dislocation Network ◽  
Tilt Axis ◽  
Secondary Dislocation ◽  
Tilt Grain Boundary

AbstractGermanium bicrystals containing dissociated low energy grain boundaries with a common [011] tilt axis were studied. The dislocation structure of a grain boundary with a misorientation of about 28° has been investigated in detail and could be interpreted as a near-coincidence Σ 27 - tilt grain boundary. Both conventional and high-resolution techniques were applied to analyze the Burgers vectors of the secondary dislocation network. In all cases non - primitive Burgers vectors were observed. The comparison with previous results indicates that the Burgers vectors of the dislocation network may depend on the degree of misorientation of the bicrystal.

Possible evidence for overcoordination at semiconductor grain boundaries

1990 ◽  
Vol 5 (3) ◽  
pp. 587-592 ◽  
Author(s):  
W. Krakow ◽  
A. A. Levi ◽  
S. T. Pantelides
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Experimental Evidence ◽  
Screw Dislocation ◽  
Electron Micrograph ◽  
Resolution Electron ◽  
Tilt Grain Boundary

The structure of a near coincidence Ge tilt grain boundary, containing a step, has been derived from a high resolution electron micrograph. There are two possible interpretations of portions of this interface, one of which is the existence of a sheet of fivefold coordinated atoms between the Σ = 19 and Σ = 27 coincidence misorientations. This finding may represent the first experimental evidence that overcoordinated atoms are present at semiconductor grain boundaries free of a screw dislocation.

Dislocation - Grain Boundary Interaction in Nickel Bicrystals Evolution of the Resulting Defects under Thermal Treatment

2000 ◽  
Vol 652 ◽  
Author(s):  
Louisette Priester ◽  
Sophie Poulat ◽  
Brigitte Décamps ◽  
Jany Thibault
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Thermal Treatment ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Dislocation Network ◽  
Boundary Interaction ◽  
Transmission Electron

ABSTRACTThe interactions between lattice dislocations and grain boundaries were studied in nickel bicrystals. Three types of grain boundaries, according to their energy, were investigated : singular σ3 {111}, vicinal near σ11 {311} and general near σ11 {332} grain boundaries. The experiments were performed by transmission electron microscopy using a set of techniques : conventional, weak beam, in situ and high resolution transmission electron microscopy. Dislocation transmission from one crystal to the other was only observed for σ3 {111} GB. It consists in a decomposition within the grain boundary of the trapped lattice dislocation followed by the emission of one partial in the neighbouring crystal. A high resolved shear stress is required to promote the emission process. Most often, the absorbed lattice dislocations or extrinsic grain boundary dislocations react with the intrinsic dislocation network giving rise to complex configurations. The evolutions with time and upon thermal treatment of these configurations were followed by in situ transmission electron microscopy. The evolution processes, which differ with the type of grain boundaries, were analyzed by comparison with the existing models for extrinsic grain boundary dislocation accommodation. They were tentatively interpretated on the basis of the grain boundary atomic structures and defects obtained by high resolution transmission electron microscopy studies.

Observations of dislocation interactions with recrystallized grain boundaries

1988 ◽  
Vol 46 ◽  
pp. 628-629
Author(s):  
C. W. Price
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Strain Rate ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Hot Deformation ◽  
Static Recrystallization ◽  
High Dislocation Density ◽  
High Angle ◽  
Dislocation Interactions

Little evidence exists on the interaction of individual dislocations with recrystallized grain boundaries, primarily because of the severely overlapping contrast of the high dislocation density usually present during recrystallization. Interesting evidence of such interaction, Fig. 1, was discovered during examination of some old work on the hot deformation of Al-4.64 Cu. The specimen was deformed in a programmable thermomechanical instrument at 527 C and a strain rate of 25 cm/cm/s to a strain of 0.7. Static recrystallization occurred during a post anneal of 23 s also at 527 C. The figure shows evidence of dissociation of a subboundary at an intersection with a recrystallized high-angle grain boundary. At least one set of dislocations appears to be out of contrast in Fig. 1, and a grainboundary precipitate also is visible. Unfortunately, only subgrain sizes were of interest at the time the micrograph was recorded, and no attempt was made to analyze the dislocation structure.

Σ =13 tilt grain boundary in silicon bicrystal

1990 ◽  
Vol 48 (4) ◽  
pp. 562-563
Author(s):  
M.J. Kim ◽  
Y.L. Chen ◽  
R.W. Carpenter ◽  
J.C. Barry ◽  
G.H. Schwuttke
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Rotation Axis ◽  
Czochralski Method ◽  
High Resolution Electron Microscopy ◽  
Image Simulation ◽  
Simulation Techniques ◽  
Resolution Electron ◽  
The Common ◽  
Tilt Grain Boundary

The structure of grain boundaries (GBs) in metals, semiconductors and ceramics is of considerable interest because of their influence on physical properties. Progress in understanding the structure of grain boundaries at the atomic level has been made by high resolution electron microscopy (HREM) . In the present study, a Σ=13, (510) <001>-tilt grain boundary in silicon was characterized by HREM in conjunction with digital image processing and computer image simulation techniques.The bicrystals were grown from the melt by the Czochralski method, using preoriented seeds. Specimens for TEM observations were cut from the bicrystals perpendicular to the common rotation axis of pure tilt grain boundary, and were mechanically dimpled and then ion-milled to electron transparency. The degree of misorientation between the common <001> axis of the bicrystal was measured by CBED in a Philips EM 400ST/FEG: it was found to be less than 1 mrad. HREM was performed at 200 kV in an ISI-002B and at 400 kv in a JEM-4000EX.

Structural Transformation of a Germanium Σ=13 (510) [001] Tilt Grain Boundary under the Electron Beam

1990 ◽  
Vol 48 (1) ◽  
pp. 52-53 ◽  
Author(s):  
Jean-Luc Rouvière ◽  
Alain Bourret
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Structural Transformation ◽  
Mirror Symmetry ◽  
High Resolution Electron Microscopy ◽  
Structural Transformations ◽  
Covalent Bonds ◽  
Resolution Electron ◽  
Tilt Grain Boundary

The possible structural transformations during the sample preparations and the sample observations are important issues in electron microscopy. Several publications of High Resolution Electron Microscopy (HREM) have reported that structural transformations and evaporation of the thin parts of a specimen could happen in the microscope. Diffusion and preferential etchings could also occur during the sample preparation.Here we report a structural transformation of a germanium Σ=13 (510) [001] tilt grain boundary that occurred in a medium-voltage electron microscopy (JEOL 400KV).Among the different (001) tilt grain boundaries whose atomic structures were entirely determined by High Resolution Electron Microscopy (Σ = 5(310), Σ = 13 (320), Σ = 13 (510), Σ = 65 (1130), Σ = 25 (710) and Σ = 41 (910), the Σ = 13 (510) interface is the most interesting. It exhibits two kinds of structures. One of them, the M-structure, has tetracoordinated covalent bonds and is periodic (fig. 1). The other, the U-structure, is also tetracoordinated but is not strictly periodic (fig. 2). It is composed of a periodically repeated constant part that separates variable cores where some atoms can have several stable positions. The M-structure has a mirror glide symmetry. At Scherzer defocus, its HREM images have characteristic groups of three big white dots that are distributed on alternatively facing right and left arcs (fig. 1). The (001) projection of the U-structure has an apparent mirror symmetry, the portions of good coincidence zones (“perfect crystal structure”) regularly separate the variable cores regions (fig. 2).

Microstructure Evolution in Belt-Casted Strip of Grain Oriented Electrical Steel

2019 ◽  
Vol 810 ◽  
pp. 82-88 ◽  
Author(s):  
Vlastimil Vodárek ◽  
Carl Peter Reip ◽  
Anastasia Volodarskaja
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Microstructure Evolution ◽  
Phase Field ◽  
Liquid Steel ◽  
Electrical Steel ◽  
Low Energy ◽  
Austenite Decomposition ◽  
Plate Martensite ◽  
Displacive Transformation

This paper deals with the formation and decomposition of Widmanstätten austenite during solidification of the thin belt-casted strip made of a grain oriented electrical steel (GOES). Solidification of liquid steel starts with the formation of d-ferrite. Cooling in the delta + gama phase field results in the formation of a small fraction of Widmanstätten austenite by displacive transformation accompanied by carbon partition. Widmanstätten austenite laths have an orientation relationship with the ferrite grain into which they grow. Furthermore, they form a flat low energy interface along the ferrite grain boundary. In order to minimize the interfacial energy, ferrite grain boundaries in the vicinity of flat austenite/ferrite interface facets are forced to migrate which results in straightening of these grain boundaries. If parallel Widmanstätten austenite laths form in two adjacent ferrite grains, zig–zag ferrite grain boundaries arise. Precipitation of sulphides along ferrite/austenite interfaces make it possible to study the early stages of austenite decomposition under the delta + gama phase field. It starts with the formation of epitaxial ferrite accompanied by further partitioning of carbon into remaining austenite. The growth of epitaxial ferrite into the flat ferrite/austenite interface facets along ferrite grain boundaries results in a wavy shape of these ferrite grain boundaries. Finally austenite transforms either to pearlite or to plate martensite.

Analytical Electron Microscopy And High-Resolution Electron Microscopy Studies Of Grain-Boundary Films In Silicon Nitride-Based Ceramics

1991 ◽  
Vol 238 ◽  
Author(s):  
H.-J. Kleebe ◽  
M. Rühle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Film Thickness ◽  
Grain Boundaries ◽  
Liquid Phase Sintering ◽  
Chemical Compositions ◽  
Phase Boundaries ◽  
Intergranular Films ◽  
Boundary Films

ABSTRACTThe microstructures of post-sintered reaction-bonded Si3N4 materials (SRBSN) were investigated. The materials consist of large elongated β-Si3N4 grains embedded in a finegrained matrix. Amorphous secondary phases exist at triple grain junctions owing to the liquid phase sintering involved during densificacition. Those amorphous phases can be crystallized (nearly completely) by post-sintering heat treatment. Apart from these crystalline grain pockets the grains of all materials are covered with thin (<l-2 nm) amorphous intergranular films on both Si3N4/Si3N4 grain boundaries as well as on secondary-phase/Si3N4 phase boundaries. A control of the intergranular films is most desirable since they limit the high-temperature mechanical properties of Si3N4-based ceramics. Therefore, the required characterization was performed by analytical and high-resolution transmission electron microscopy (AEM/HREM). Si3N4 materials with different rare-earth and transition-element oxide additions were studied. AEM and HREM investigations revealed marked differences in thicknesses and chemical compositions of the different intergranular films depending on the system analyzed indicating a strong dependence of film thickness on chemical composition. However, a given composition of each investigated material showed a characteristic intergranular film thickness, independent of grain misorientation, with the only exception of low-energy grain boundaries. The thickness of the intergranular films was constant within 0.2 nm. In addition, the film thickness of phase boundaries was always greater (by 1–2 nm) compared to grain-boundary films.

Precipitation of Copper and Cobalt at Grain Boundaries in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
U. Jendrich ◽  
H. J. Möller
Keyword(s):  
Particle Size ◽  
Mössbauer Spectroscopy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Cooling Rate ◽  
Polycrystalline Silicon ◽  
Mossbauer Spectroscopy ◽  
Low Energy ◽  
Surface Source ◽  
Mößbauer Spectroscopy

AbstractThe precipitation of copper and (radioactive) cobalt at low energy grain boundaries in polycrystalline silicon and bicrystals is investigated. The metals are diffused in from a surface source between 800 - 1000 °C and the precipitation after cooling down is studied by TEM (for Cu) and Mößbauer spectroscopy (for Co). The precipitates are metal suicides. For copper it is shown that they appear in form of colonies containing hundreds of precipitates with a particle size between 5-60 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. In the vicinity of the grain boundary the volume is depleted from the impurities.

Effect of Crack on the Tensile Strength of a Bicrystal Zr - A MD Based Evaluation

2020 ◽  
Vol 978 ◽  
pp. 487-491
Author(s):  
Divya Singh ◽  
Avinash Parashar
Keyword(s):  
Molecular Dynamics ◽  
Tensile Strength ◽  
Grain Boundary ◽  
Tensile Loading ◽  
Strain Response ◽  
Tilt Axis ◽  
Symmetric Tilt ◽  
Tilt Grain Boundary ◽  
The One ◽  
Dynamics Simulations

In this article, molecular dynamics simulations have been performed to study the effect of crack on the tensile strength of a bicrystal of Zr. Bicrystal with a symmetric tilt grain boundary, with crack and without crack, are generated along [0001] tilt axis. This is further subjected to tensile loading and the stress strain response of the bicrystals with and without crack is studied. The strength of the bicrystal with crack is lower than the one without crack.

Characterization of structural units in tilt grain boundaries

1992 ◽  
Vol 50 (1) ◽  
pp. 120-121
Author(s):  
Stuart McKernan ◽  
C. Barry Carter
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Structural Units ◽  
Symmetric Tilt ◽  
Resolution Electron ◽  
Special Cases ◽  
High Resolution Electron Microscope

General tilt grain boundaries can be viewed in terms of small structural units of varying complexity. High-resolution electron microscope (HREM) images of these boundaries in many materials show this repetitive similarity of the atomic structure at the boundary plane. The structure of particular grain boundaries has been examined for several special cases and commonly observed configurations include symmetric tilt grain boundaries and asymmetric tilt grain boundaries with one grain having a prominent, low-index facet. Several different configurations of the boundary structure may possibly occur, even in the same grain boundary. There are thus many possible ways to assemble the basic structural units to form a grain boundary. These structural units and their distribution have traditionally been examined by high-resolution electron microscopy. The images of the projection of the atomic columns (or the tunnels between atomic columns) providing a template for constructing “ball-and-stick ” models of the interface.

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