Electrical Transport Dissipation Effects in Epitaxial Y1ba2cu3o7.X Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
D. K. Christen ◽  
C. E. Klabunde ◽  
R. Feenstra ◽  
D. H. Lowndes ◽  
D. Norton ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
High Field ◽  
Electrical Transport Properties ◽  
Thermally Activated ◽  
Flux Motion ◽  
Oriented Films ◽  
Activated Flux ◽  
Substrate Surfaces ◽  
Granular Behavior

AbstractThe electrical transport properties of a series of Y1Ba2Cu307.x thin films deposited onto single crystal substrates by thermal coevaporation and laser ablation were investigated. For fully epitaxial, c‐oriented films on (001) substrate surfaces, the critical current density Jc showed large high‐field enhancements for the film aligned with H parallel to the copper‐oxygen planes. With H||c, a precipitous decay of Jc with increasing field is described by thermally activated flux motion. Films on (110) SrTiO3 substrates were comprised of finely‐divided arrays of grains having [110], and <103>‐type orientations, and exhibited granular behavior. For these “triaxial” films, the transport dissipation was also thermally activated but with much smaller energy barriers.

Thermally activated flux motion in YBa2(Cu1−xZnx)3O7−δ epitaxial thin films: influence of magnetic field and Zn doping

1997 ◽  
Vol 278 (1-2) ◽  
pp. 113-121 ◽  
Author(s):  
J. Schroeder ◽  
M. Ye ◽  
J.F. de Marneffe ◽  
M. Mehbod ◽  
R. Deltour ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Epitaxial Thin Films ◽  
Zn Doping ◽  
Thermally Activated ◽  
Flux Motion ◽  
Activated Flux

scholarly journals Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Magnetic Moments ◽  
Structural Disorder ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Strongly Correlated Electron ◽  
Correlated Electron Systems ◽  
Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation

2021 ◽  
pp. 100113
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M.D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Shi Irradiation

Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Oxide Thin Films ◽  
Electrical Transport Properties

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties

Electrical transport properties of thallium-doped p-type Pb0.8Sn0.2Te thin films

1988 ◽  
Vol 23 (3) ◽  
pp. 1002-1008 ◽  
Author(s):  
C. Jagadish ◽  
A. L. Dawar ◽  
P. C. Mathur
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document