Analysis of the Amorphous Silicon Carbide/Crystalline Silicon Interface

1990 ◽  
Vol 192 ◽  
Author(s):  
M. M. Rahman ◽  
T. Harjono ◽  
K. H. Lui ◽  
F. E. Pagaduan ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Debye Length ◽  
Mis Structure ◽  
Electrical Characteristics ◽  
Hetero Structure ◽  
Dopant Profile ◽  
High Resolution Tem ◽  
Silicon Based ◽  
Substrate Doping ◽  
Silicon Interface

ABSTRACTThe performance and reliability of silicon-based hetero-structure devices depend critically on their interfacial characteristics. Here we present high-resolution TEM (HRTEM) results for the a-SiC:H/c-Si (100) interface, substrate doping, and interface electrical characteristics derived from an Al/undoped a-SiC:H/p-Si metal-insulator-semiconductor (MIS) structure. The HRTEM study reveals an interface with a maximum asperity of three atomic planes. The substrate dopant profile for depths less than an extrinsic Debye length from the interface is computed from an iterative fit to the C-V data. A density of interface traps (Dit) of 1011 eV−1cm−2 at midgap is obtained.

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions

2014 ◽  
Vol 7 (6) ◽  
pp. 065504 ◽  
Author(s):  
Jieyu Bian ◽  
Liping Zhang ◽  
Wanwu Guo ◽  
Dongliang Wang ◽  
Fanying Meng ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Chemical Solutions ◽  
Silicon Interface

Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)

2014 ◽  
Vol 16 (29) ◽  
pp. 15400-15410 ◽  
Author(s):  
Yiming Liu ◽  
Yun Sun ◽  
Wei Liu ◽  
Jianghong Yao
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thin Layer ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cell ◽  
Heterojunction Solar Cells ◽  
Silicon Based

A novel high-efficiency c-Si heterojunction solar cell with using compound hetero-materials is proposed and denominated HCT (heterojunction with a compound thin-layer).

scholarly journals Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

2011 ◽  
Vol 99 (12) ◽  
pp. 123506 ◽  
Author(s):  
A. Descoeudres ◽  
L. Barraud ◽  
Stefaan De Wolf ◽  
B. Strahm ◽  
D. Lachenal ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Interface Passivation ◽  
Silicon Interface

Analysis of Grain-Boundary in SrCoO3–Doped ZnO Varistors and its Electrical Characteristics

2013 ◽  
Vol 582 ◽  
pp. 181-184 ◽  
Author(s):  
Eiichi Koga ◽  
Masayuki Hogiri ◽  
Yoshiko Higashi
Keyword(s):  
Grain Boundary ◽  
Schottky Barrier ◽  
Boundary Region ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Hetero Structure ◽  
Characteristic Behavior ◽  
Zno Varistors ◽  
Doped Zno ◽  
Barrier Model

The grain-boundary and its electrical characteristics in SrCoO3doped ZnO varistors were studied. The grain-boundary around ZnO-grain is probably composed of SrCoO3, and its electrical behavior is clearly different from two conventional types of Bi-and Pr-based ZnO varitors. The non-linearity and characteristic behavior could be explained by considering the n-p-n hetero-structure at the grain boundary. SrCoO3 in the grain-boundary region should play crucial roles of not only the appearance of non-liner property but also the formation of different hetero-structure from double Schottky-barrier model on conventional varistors.

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