Self Annealing Ion Implantation in thin Silicon Films

1990 ◽  
Vol 201 ◽  
Author(s):  
J. D. Rubio ◽  
R. P. Vijay ◽  
R. R. Hart
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Annealing Process ◽  
Silicon Films ◽  
The Self ◽  
Sample Temperature ◽  
Strong Correlations ◽  
Medium Energy ◽  
Lattice Damage ◽  
Distinct Temperature

AbstractThe self annealing phenomenon was studied utilizing 1 cm diameter, 1 μm thick, <100> oriented silicon films. Previous results established the viability of the self annealing process for medium energy argon beams incident on similar targets [1]. In the current work, doubly aligned backscatter spectra were obtained to improve the sensitivity of the residual lattice damage measurements. In addition, some implantations were performed at elevated temperatures to independently determine the effect of the flux and the sample temperature on the self annealing process. The results showed strong correlations between the implantation flux, sample temperature and the residual lattice damage. Two distinct temperature regions were observed above and below 330 °C with corresponding activation energies of 1.5 eV and 0.1 eV.

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Ion-Implantation Studies of Graphite

1982 ◽  
Vol 20 ◽  
Author(s):  
B.S. Elman ◽  
M. Hom ◽  
E.W. Maby ◽  
M.S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Elevated Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Pyrolytic Graphite ◽  
Structural Disorder ◽  
Postimplantation Annealing ◽  
Lattice Damage ◽  
Secondary Ion

ABSTRACTIon implantation of highly oriented pyrolytic graphite (HOPG) is studied using various characterization techniques, including Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Particular attention is given to the annealing of the implantation-induced lattice damage using both hot substrate implantation (200 < T1< 1000°C) and postimplantation annealing. The Raman spectra provide detailed information on the implantation-induced structural disorder by analysis of the disorder-induced and Raman-allowed features in the first- and second-order spectra. SIMS measurements show that the implanted profile is essentially the same for hot substrate and room temperature implantation for the case of HOPG. It is shown that implantation at elevated temperatures prevents amorphization more effectively than implantation at room temperature and subsequent annealing at the same elevated temperature. The annealing results show that fundamentally different defects are created during room temperature and hot substrate implantation.

Er+ medium energy ion implantation into lithium niobate

2009 ◽  
Vol 267 (8-9) ◽  
pp. 1332-1335 ◽  
Author(s):  
B. Svecova ◽  
P. Nekvindova ◽  
A. Mackova ◽  
J. Oswald ◽  
J. Vacik ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Ion Implantation ◽  
Medium Energy

P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

2012 ◽  
Vol 101 (11) ◽  
pp. 112101 ◽  
Author(s):  
M. A. Myers ◽  
M. T. Myers ◽  
M. J. General ◽  
J. H. Lee ◽  
L. Shao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Annealing Process ◽  
Zno Thin Films ◽  
P Type

Plasma Immersion Ion Implantation at Elevated Temperatures

2018 ◽  
pp. 187-200
Author(s):  
R. Hutchings ◽  
M. J. Kenny ◽  
D. R. Miller ◽  
W. Y. Yeung
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Plasma Immersion Ion Implantation
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