Modeling of Damage Enhanced Diffusion of Implanted Boron in Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
V. C. Lo ◽  
S. P. Wong ◽  
Y. W. Lam
Keyword(s):  
High Dose ◽  
Boron Diffusion ◽  
Furnace Annealing ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Boron Implantation ◽  
Dominant Point ◽  
Local Relaxation ◽  
And Diffusion ◽  
Defect Species

AbstractModeling of the damage enhanced diffusion (DED) behaviors of implanted boron in silicon of Powell’s experiment [1] has been performed. In his experiment, Powell showed that the diffusion of implanted boron in silicon was dependent on implantation dosage as well as on the annealing conditions. For low dose boron implantation, the extent of boron diffusion after 15 second RTP is less than that of furnace annealing at 900°C for 30 minutes. But the reverse is true for the high dose case, and a two-step annealing leads to least and minimal diffusion. In this work, implantation induced excess self-interstitials which generate mobile boron atoms at the intersititial sites are considered the dominant point defect species responsible for the DED. Both the local relaxation and diffusion of these excess self-interstitials are considered. The features of the DED reported by Powell are successfully reproduced and explained.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects

2002 ◽  
Vol 717 ◽  
Author(s):  
Masashi Uematsu
Keyword(s):  
Time Dependence ◽  
Diffusion Model ◽  
Low Dose ◽  
Ostwald Ripening ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Transient Enhanced Diffusion ◽  
High Dose Implantation ◽  
Medium Dose

AbstractThe transient enhanced diffusion (TED) of high-dose implanted P is simulated taking into account Ostwald ripening of end-of-range (EOR) defects. First, we integrated a basic diffusion model based on the simulation of in-diffusion, where no implanted damages are involved. Second, from low-dose implantation, we developed a model for TED due to {311} self-interstitial (I) clusters involving Ostwald ripening and the dissolution of {311} clusters. Third, from medium-dose implantation, we showed that P-I clusters should be taken into account, and during the diffusion, the clusters are dissolved to emit self-interstitials that also contribute to TED. Finally, from high-dose implantation, EOR defects are modeled and we derived a formula to describe the time-dependence for Ostwald ripening of EOR defects, which is more significant at higher temperatures and longer annealing times. The simulation satisfactorily predicts the TED for annealing conditions, where the calculations overestimate the diffusion without taking Ostwald ripening into account.

Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

1999 ◽  
Vol 568 ◽  
Author(s):  
Jinning Liu ◽  
Kevin S. Jones ◽  
Daniel F. Downey ◽  
Sandeep Mehta
Keyword(s):  
Defect Formation ◽  
Low Energy ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Diffusion Enhancement ◽  
Spike Anneal ◽  
Low Thermal Budget

ABSTRACTTo meet the challenge of achieving ultra shallow p+/n source/drain extension junctions for 0.1 Oim node devices, ultra low energy boron implant and advanced annealing techniques have been explored. In this paper, we report the extended defect and boron diffusion behavior with various implant and annealing conditions. Boron implants were performed at energies from 0.25keV to lkeV and doses of 5 × 1014 cm−2 and 1 × 1015cm−2. Subsequent anneals were carried out in nitrogen ambient. The effect of energy, dose and oxide capping on extended defect formation and enhanced dopant diffusion was examined. It was observed that a thin screen oxide layer (35Å), grown prior to implantation, reduces the concentration of dopant in the Si by a significant amount as expected. This oxide also reduces the dislocation loops in the lattice and lowers diffusion enhancement of the dopant during annealing. The final junction depth can be optimized by using a low thermal budget spike anneal in a controlled oxygen ambient.

Defects Induced by Helium Implantation: Impact on Boron Diffusivity

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Cayrel ◽  
D. Alquier ◽  
C. Dubois ◽  
R. Jerisian
Keyword(s):  
Defect Density ◽  
Defect Layer ◽  
High Dose ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Helium Implantation ◽  
Buried Layer ◽  
Boron Diffusivity ◽  
Induced Defects ◽  
Metallic Impurities

AbstractHigh dose helium implantation followed by a suitable thermal treatment induces defects such as cavities and dislocations. Gettering efficiency of this technique for metallic impurities has been widely proved. Nevertheless, dopants, as well as point defects, interact with this defect layer. Due to the presence of vacancy type defects after helium implantation, boron diffusion can be largely influenced by such a buried layer. In this paper, we study the influence of helium induced defects on boron diffusion. The boron diffusion in presence of these defects has been analyzed as a function of different parameters such as distance between boron profile and defect layer and defect density. Our results demonstrate that the major impact known as boron enhanced diffusion can be partially or completely suppressed depending on parameters of experiments. Moreover, these results clarify the interaction of boron with extended He-induced defects.

Comparison of Ultra-low-energy Ion Implantation of Boron and BF2

1999 ◽  
Vol 568 ◽  
Author(s):  
Jihwan Park ◽  
Hyunsang Hwang
Keyword(s):  
Sheet Resistance ◽  
Significant Loss ◽  
Oxide Semiconductor ◽  
Computationally Efficient ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Ultrashallow Junctions ◽  
The Monte Carlo Method ◽  
Boron Implantation ◽  
Effect Transistor

ABSTRACTWe have compared the electrical characteristics and the depth profile of an ultrashallow junctions formed by boron implantation at 0.5 keV and BF2 implantation at 2.2 keV. The modeling of the boron profile was performed using the Monte Carlo method for an as-implanted profile and the computationally efficient method for transient-enhanced diffusion. A junction depth of BF2 is shallower than that of boron after annealing. HF dipping prior to rapid thermal annealing causes a significant loss of dopant and high sheet resistance. Considering the 0.1 νn metal-oxide-semiconductor field-effect-transistor (MOSFET) application, the optimizations of implantation and annealing conditions are necessary to satisfy the requirement ofjunction depth and sheet resistance.

Rapid Thermal Annealing of III–V Compound Materials

1983 ◽  
Vol 23 ◽  
Author(s):  
M. Kuzuhara ◽  
H. Kohzu ◽  
Y. Takayama
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Furnace Annealing ◽  
Promising Alternative ◽  
Gaas Mesfet ◽  
Annealing Conditions ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Compound Materials

ABSTRACTRapid thermal process utilizing radiation from halogen lamps has been used to post-anneal ion-implanted GaAs. Annealing conditions for Si implants in GaAs are discussed from the view point of applying this technique to GaAs MESFET fabrication. Also, the properties of S and Mg implants in GaAs followed by rapid thermal annealing are comparatively studied with the results after conventional furnace annealing. High electrical activation and minimized implant diffusion for both low and high dose implants are the principal features of this technique. The fabricated MESFET showed much higher transconductance without any anomalous characteristics, indicating this technique to be a promising alternative to conventional furnace annealing.

Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application

1993 ◽  
Vol 303 ◽  
Author(s):  
H. Kinoshita ◽  
T. H. Huang ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Boron Diffusion ◽  
Defect Model ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Wide Range ◽  
Simulation Results ◽  
Single Set

ABSTRACTThe diffusion and activation of ion implanted boron and BF2 during rapid thermal annealing (RTA) was modeled by considering the reaction kinetics between point defects and boron. The diffusion model uses the Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose BF2 implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF2 implant doses.

Semi-Empirical Model for Boron Diffusion During Rapid Thermal Annealing of BF2 Implanted Silicon

1993 ◽  
Vol 303 ◽  
Author(s):  
Tzu-Hsin Huang ◽  
H. Kinoshita ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Defect Clusters ◽  
Annealing Conditions ◽  
Wide Range ◽  
Point Defect Clusters ◽  
Semi Empirical

ABSTRACTThe mechanism of the enhanced diffusion of boron during rapid thermal annealing (RTA) of BF2-implanted Si has been investigated, and a diffusion model is accordingly developed for a wide range of implant and annealing conditions. Simulation results are in excellent agreement with experiments for BF2 implant doses from 2×1013 to 5×1015cm−2, implant energies from 6 to 45 keV, and annealing temperatures from 950 to 1100°C. This model not only accounts for the transient enhanced diffusion due to the annealing of point-defect clusters and dislocation loops, but also for the retarded diffusion due to dopant precipitation. All the parameters used in this model are analytically determined.

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects

1991 ◽  
Author(s):  
Bruha Raicu ◽  
W. A. Keenan ◽  
Michael I. Current ◽  
David Mordo ◽  
Roger Brennan
Keyword(s):  
High Dose ◽  
Shallow Junction ◽  
Boron Implantation ◽  
Polysilicon Films
Sign in / Sign up

Export Citation Format

Share Document