Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

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Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

MRS Proceedings ◽

10.1557/proc-1-407 ◽

1980 ◽

Vol 1 ◽

Author(s):

S.W. Chiang ◽

Y.S. Liu ◽

R.F. Reihl

Keyword(s):

Ion Implantation ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

A Cell ◽

Ft Ir ◽

Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

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Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

MRS Proceedings ◽

10.1557/proc-4-689 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 2

Author(s):

Douglas H. Lowndes ◽

Bernard J. Feldman

Keyword(s):

Radiative Recombination ◽

Laser Annealing ◽

Laser Energy ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Recombination Centers ◽

Pl Intensity ◽

P Type ◽

Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

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Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors

Physical Review B ◽

10.1103/physrevb.53.4757 ◽

1996 ◽

Vol 53 (8) ◽

pp. 4757-4769 ◽

Cited By ~ 18

Author(s):

G. Vitali ◽

L. Palumbo ◽

M. Rossi ◽

G. Zollo ◽

C. Pizzuto ◽

...

Keyword(s):

Low Power ◽

Laser Annealing ◽

Solid Phase ◽

Pulsed Laser ◽

Compound Semiconductors ◽

Solid Phase Epitaxy ◽

Pulsed Laser Annealing

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TA-A2 sheet resistivity reduction in polycrystalline silicon by pulsed laser and CW laser annealing

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1979.19714 ◽

1979 ◽

Vol 26 (11) ◽

pp. 1833-1833

Author(s):

T. Shibata ◽

K.F. Lee ◽

J.F. Gibbons

Keyword(s):

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

Sheet Resistivity ◽

Cw Laser

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Activation of Si-N Modes in Silicon by Pulsed Laser Annealing

MRS Proceedings ◽

10.1557/proc-35-315 ◽

1984 ◽

Vol 35 ◽

Author(s):

H. J. Stein ◽

P. S. Peercy ◽

C. R. Hills

Keyword(s):

Fine Structure ◽

Laser Annealing ◽

Pulsed Laser ◽

Realistic Model ◽

Vibrational Modes ◽

Annealing Furnace ◽

Furnace Annealing ◽

Structure Defects ◽

Pulsed Laser Annealing ◽

Transmission Electron

ABSTRACTRetention and bonding of nitrogen implanted into crystalline Si were examined by infrared absorption (ir) and transmission electron microscopy (TEM) after furnace and pulsed laser annealing. Localized Si-N vibrational modes for N-N pairs are observed, and the associated ir band intensities increase upon pulsed annealing. Furnace annealing above 600°C decreases the ir intensity for N-N pairs and fine structure defects appear in TEM. Subsequent laser annealing removes most of the fine structure and reactivates the pair spectrum which we interpret as dissolution of N precipitates and pair formation upon quenching from the melt. Any realistic model for N in Si must include the formation and consequences of N-N pairs.

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Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing

MRS Proceedings ◽

10.1557/proc-13-155 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 2

Author(s):

J. Narayan ◽

O. W. Holland ◽

G. L. Olson

Keyword(s):

Laser Annealing ◽

Solid Phase ◽

Furnace Annealing ◽

Plan View ◽

Dopant Segregation ◽

Cw Laser ◽

Retrograde Solubility ◽

Section Electron ◽

Residual Damage ◽

Section Electron Microscopy

ABSTRACTThe nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported [1] and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

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