Decomposition Mechanisms of Antimony Source Compounds for Organometallic Vapor-Phase Epitaxy

1990 ◽  
Vol 204 ◽  
Author(s):  
Cory A. Larsen ◽  
Robert W. Gedridge ◽  
Shin Hwa Li ◽  
Gerald B. Stringfellow
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Organometallic Vapor Phase Epitaxy ◽  
Flow Tube ◽  
Methyl Vinyl ◽  
Pyrolysis Mechanism ◽  
Tube Reactor ◽  
Decomposition Mechanisms ◽  
Carrier Gases

ABSTRACTThe decompositions of tertiary stibines (R3Sb, R = methyl, vinyl, isopropyl) were studied in an atmospheric pressure flow tube reactor, using D2 and He as carrier gases. D2 was used to isotopically label the byproducts in order to elucidate the pyrolysis mechanism. The exhaust products were analyzed by a time-of-flight mass spectrometer. The decomposition of these tertiary stibines in the presence of group Ill precursors was studied in order to simulate the conditions of organometallic vapor phase epitaxial growth. A comparison between the pyrolysis temperatures, decomposition mechanisms, and surface area effects of these Sb source compounds is presented.

Pyrolysis Studies and Deposition of Sb Films Using the Novel Omvpe Source (I-Pr)2 SbH

1992 ◽  
Vol 282 ◽  
Author(s):  
Robert W. Gedridge ◽  
Kenneth E. Lee ◽  
Charlotte K. Lowe-Ma
Keyword(s):  
Atmospheric Pressure ◽  
Semiconductor Materials ◽  
Organometallic Vapor Phase Epitaxy ◽  
The Novel ◽  
Gas Analyzer ◽  
X Ray Diffraction ◽  
Temperature Growth ◽  
X Ray ◽  
Residual Gas ◽  
Carrier Gases

ABSTRACTThe novel antimony source compound di-isopropylantimony hydride, (i-Pr)2 was synthesized and evaluated for use as a volatile Sb-source compound for low temperature growth of Sb-containing semiconductor materials. (i-Pr)2SbH was pyrolyzed in a horizontal atmospheric pressure organometallic vapor phase epitaxy (OMVPE) reactor using Arand H2 as carrier gases. The gaseous exhaust products were analyzed by a residual gas analyzer. Complete pyrolysis of (i-Pr)2SbH in our OMVPE reactor occursaround 300°C and 350°C in Ar and H2, respectively. A comparison between the pyrolysis temperatures and pyrolysis byproducts with respect to a proposed decomposition mechanism of (i-Pr)2SbH is presented. Sb films were grown on Si(100) andSi(111) as low as 200° C. The Sb films were analyzed by Auger and X-ray diffraction. These polycrystalline Sb films were free of detectable carbon by AES. X-ray diffraction data indicated that these Sb films were highly oriented in the [000L] direction.

Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

2010 ◽  
Vol 208 (2) ◽  
pp. 445-448 ◽  
Author(s):  
Naoki Furukawa ◽  
Atsushi Nishikawa ◽  
Takashi Kawasaki ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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