Single Source Precursors for III-V OMCVD Growth and Pyrolysis Studies

1990 ◽  
Vol 204 ◽  
Author(s):  
Richard A. Jones ◽  
Alan H. Cowley ◽  
John G. Ekerdt
Keyword(s):  
Growth Rates ◽  
Film Growth ◽  
Single Source ◽  
Oriented Growth ◽  
Single Source Precursors ◽  
Group Iii ◽  
Temperature Range

ABSTRACTCompounds of the type (L2MEL'2)x, where M and E are the group III and V elements, respectively, and L and L' are ligands which may be thermally eliminated are being studied as single source precursors to III-V semiconductors. An array of these compounds have been synthesized with various III-V combinations, and hydride and alkyl ligands. Film growth was studied over the temperature range of 450-600 °C and at 10−4 Torr. Growth rates of 1 μm/hr are typical when the compounds are maintained at 125-140 °C. (Me2Ga(μ-t-Bu2As) [2 led to films which were polygrained with the grains oriented in the (111) direction and retained the 1:1 stoichiometry of the precursor. Films from [Me2Ga(μ-i-Pr2As)]3 did not retain the 1:1 stoichiometry and did not show the preference for (111)- oriented growth.

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

GaN Film Growth Using Single-Source Precursors

1995 ◽  
Vol 7 (3) ◽  
pp. 546-552 ◽  
Author(s):  
Vikas Lakhotia ◽  
Deborah A. Neumayer ◽  
A. H. Cowley ◽  
R. A. Jones ◽  
J. G. Ekerdt
Keyword(s):  
Film Growth ◽  
Single Source ◽  
Single Source Precursors ◽  
Gan Film

ChemInform Abstract: GaN Film Growth Using Single-Source Precursors.

ChemInform ◽  
2010 ◽  
Vol 26 (29) ◽  
pp. no-no
Author(s):  
V. LAKHOTIA ◽  
D. A. NEUMAYER ◽  
A. H. COWLEY ◽  
R. A. JONES ◽  
J. G. EKERDT
Keyword(s):  
Film Growth ◽  
Single Source ◽  
Single Source Precursors ◽  
Gan Film

Single-Source Precursors to Niobium Nitride and Tantalum Nitride Films

1993 ◽  
Vol 327 ◽  
Author(s):  
Charles H. Winter ◽  
Kumudini C. Jayaratne ◽  
James W. Proscia
Keyword(s):  
Thin Films ◽  
Niobium Nitride ◽  
Tantalum Nitride ◽  
Single Source ◽  
Single Source Precursors ◽  
Temperature Range ◽  
Glass Substrates

AbstractHerein we report our efforts to prepare new precursors to niobium nitride (NbN) and tantalum nitride (TAN, Ta3N5) thin films. Treatment of MC15 (M = Nb, Ta) with tertbutylamine in benzene solvent affords complexes of the formula [MCI2 (NtBu)(NHtBu)(NH2tBu)]2. The niobium complex [NbC12(NtBu)(NHtBu)- (NH2tBu)]2 affords NbN films on glass substrates between 500-600 °C, while the tantalum analog [TaC12(NtBu)(NHtBu)(NH2tBu)]2 gives films of Ta3N5 in this temperature range. Treatment of MCI5 (M = Nb, Ta) with 1,1-dimethylhydrazine in dichloromethane solvent affords complexes of the formula [MC12(NNMe2)(NHNMe2)(NH2NMe2)]n. These hydrazido complexes afford cubic MN films upon glass substrates at ≥400°C. Analyses of the films are presented.

Single Source Precursors to Group III (13) Metal Nitrides

1995 ◽  
Vol 17 (2) ◽  
pp. 79-94 ◽  
Author(s):  
Thomas D. Getman ◽  
Gary W. Franklin
Keyword(s):  
Metal Nitrides ◽  
Single Source ◽  
Single Source Precursors ◽  
Group Iii

Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

1997 ◽  
Vol 482 ◽  
Author(s):  
Roland A. Fischer ◽  
Wolfram Rogge
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Decomposition Temperature ◽  
The Novel ◽  
Single Source ◽  
Single Source Precursors ◽  
Group Iii ◽  
Group Iii Nitride

AbstractThe OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

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