Kinetics of NiSi Formation by Solid State Diffusion in Pt/NiCr/Si Via Growth of an Amorphous Cr-Rich Barrier Layer

1990 ◽  
Vol 205 ◽  
Author(s):  
B.K. Patnaik ◽  
Ju Hyeon Lee ◽  
D. Adams ◽  
G.A. Rozgonyi ◽  
N.R. Parikh ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Stage ◽  
Amorphous Layer ◽  
Solid State Diffusion ◽  
Low Temperature Annealing ◽  
Prolonged Annealing ◽  
Transmission Electron ◽  
State Diffusion ◽  
Silicide Growth ◽  
Kinetics Of

AbstractWe have used Rutherford backscattering spectroscopy (RBS) to study the kinetics of NiSi growth during low temperature annealing of a Ni(Cr) layer on Si. During the silicide growth, a Cr-rich amorphous layer was formed between the silicide and the Ni(Cr) layers. This amorphous layer produces a slow and uniform silicide growth rate; the NiSi thickness was 60 nm after a 2h anneal at 475°C. After prolonged annealing, the amorphous layer recrystallized, causing very rapid silicide growth. When a thin (0.5 nm) layer of Pt was deposited between the Si and Ni(Cr) layers, the amorphous layer was thinner, the silicide growth rate was correspondingly greater and the rapid growth stage occurred earlier. The RBS data agreed qualitatively with transmission electron microscopy results for the growth of both the amorphous layer and the silicide.

The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon

1990 ◽  
Vol 205 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
C. Kirschbaum
Keyword(s):  
Growth Rate ◽  
Solid Phase ◽  
Intrinsic Value ◽  
Amorphous Layer ◽  
Inert Gas ◽  
Solid Phase Epitaxy ◽  
Depth Profiles ◽  
Kinetics Of ◽  
Crystal Interface ◽  
Good Agreement

AbstractThis paper discusses the intrusion of H into a-Si layers during solid phase epitaxy and the effect of this H on the growth kinetics. We show that during annealing in the presence of water vapor, H is continuously generated at the oxidizing a-Si surface and diffuses into the amorphous layer, where it causes a reduction in the epitaxial growth rate. The measured variation of growth rate with the depth of the amorphous/crystal interface is correlated with the concentration of H at the interface. The diffusion coefficient for H in a-Si is determined by comparing measured depth profiles with calculated values. Hydrogen intrusion is observed even in layers annealed in vacuum and in inert gas ambients. Thin (<;5000 Åthick) a-Si layers are especially susceptible to this effect, but we show that in spite of the presence of H the activation energy for SPE derived earlier from thin-layer data is in good agreement with the intrinsic value obtained from thick, hydrogen-free layers.

Growth kinetics of phases in solid-state diffusion couples

1995 ◽  
Vol 152 (2) ◽  
pp. 385-392 ◽  
Author(s):  
V. H. Garcia ◽  
C. Scherer ◽  
P. M. Mors
Keyword(s):  
Solid State ◽  
Growth Kinetics ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
State Diffusion ◽  
Kinetics Of

Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

Formation of Amorphous Interlayers by Solid-State Diffusion in Refractory Metal/Silicon Systems

1990 ◽  
Vol 187 ◽  
Author(s):  
J.Y. Cheng ◽  
M.H. Wang ◽  
L.J. Chen
Keyword(s):  
Solid State ◽  
Linear Growth ◽  
Energy Difference ◽  
Heat Of Formation ◽  
Solid State Diffusion ◽  
Free Energy Difference ◽  
Atomic Size ◽  
Transmission Electron ◽  
State Diffusion ◽  
Interface Structures

AbstractFormation and growth of amorphous interlayers (a-interlayers) in nine refractroy metal and silicon systems by solid-state diffusion have been investigated by conventional and high resolution transmission electron microscopy. The amorphous interlayers were found to form in samples annealed at 350–650 °C. The growth was found to follow a linear growth law initially then slow down until a critical thicknees was reached. The interface structures were examined. The correlations among difference in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free energy difference in forming amorphous phase as well as atomic mobility in refractroy metal/silicon systems are discussed.

Models for growth kinetics of A-15 compounds by solid state diffusion

1978 ◽  
Vol 38 (5) ◽  
pp. 559-568 ◽  
Author(s):  
B. V. Reddi ◽  
S. Ray ◽  
V. Raghavan ◽  
A. V. Narlikar
Keyword(s):  
Solid State ◽  
Growth Kinetics ◽  
Solid State Diffusion ◽  
State Diffusion ◽  
Kinetics Of

scholarly journals DISTRIBUTION OF THE STATES AND FEATURES OF THE MASS TRANSFER OF METHANE IN FOSSIL COAL

2013 ◽  
pp. 29-33
Author(s):  
T. Vasilenko ◽  
O. Molchanov ◽  
E. Feldman
Keyword(s):  
Experimental Data ◽  
Mass Transfer ◽  
Coal Bed ◽  
Coal Bed Methane ◽  
Solid State Diffusion ◽  
Fossil Coal ◽  
State Diffusion ◽  
Proposed Model ◽  
Small Times ◽  
Kinetics Of

The paper is devoted to the modern concepts of physical kinetics of coal bed-methane. We consider the nature of the desorption of methane from coal substance as a result of solid-state diffusion and filtration. We propose a two-time diffusion-filtration mechanism of mass transfer of gas in a porous material, based idea of «fast» and «slow» methane. In the proposed model the mass transfer of methane constructed asymptotic behavior for large and small times, which express the time dependence of the concentration of the gas, and a comparison of experimental data with the results of numerical calculation.

Formation of Amorphous Interlayers by Solid–State Diffusion in Ti Thin Films on Si–ge Layers on Silicon and Germanium

1995 ◽  
Vol 379 ◽  
Author(s):  
J.B. Lai ◽  
C.S. Liu ◽  
L.J. Chen ◽  
J.Y. Cheng
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
The Other ◽  
Solid State Diffusion ◽  
Formation Temperature ◽  
Transmission Electron ◽  
State Diffusion ◽  
Silicon And Germanium

ABSTRACTThe formation of amorphous interlayers (a–interlayers) by solid–state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin film on germanium and Sil-xGex alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy.Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as–deposited samples. The growth of a–interlayers was found to vary non–monotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with that of the Ti/Si system. The formation mechanism are discussed in terms of thermodynamic and kinetic factors.

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