Study on the Striitiires, Electrical, Properities of the Multicrystal Multiphase Material Li2Mo2-xWx06

1990 ◽  
Vol 210 ◽  
Author(s):  
Cui Wanqiu ◽  
Shen Zhiqi ◽  
Zhou Debao
Keyword(s):  
Activation Energy ◽  
Ionic Conductivity ◽  
Electrical Properties ◽  
Esr Spectra ◽  
High Conductivity ◽  
Structure Model ◽  
Tungsten Content ◽  
Micro Structure ◽  
Multiphase Material ◽  
Two Phases

AbstractThe multicrystal multiphase ceramics material. Li2Mo2Wx06, with high conductivity is prepared. By XPD, EDX graph, IR and ESR spectra, it's determined that the samples are composed of two phases.Li2MO1-xWx04 and MoO2. The electrical properties are studied by AC admittance bridge and comptex impedance cpectroscopy. The ionic conductivity increases and conducted activation energy decreases with the tungsten content increasing. The micro-structure model. and the ionic conducted mechanism are given in this paper.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

scholarly journals Test of Anderson-Stuart model in sodium silicate glasses and the general Arrhenian conductivity rule in wide composition range

Cerâmica ◽  
2006 ◽  
Vol 52 (321) ◽  
pp. 22-30 ◽  
Author(s):  
M. L. F. Nascimento ◽  
E. Nascimento ◽  
W. M. Pontuschka ◽  
M. Matsuoka ◽  
S. Watanabe
Keyword(s):  
Activation Energy ◽  
Ionic Conductivity ◽  
Sodium Silicate ◽  
Composition Range ◽  
Absolute Temperature ◽  
Alkali Concentration ◽  
Relative Dielectric Permittivity ◽  
Silicate System ◽  
Wide Composition Range ◽  
Sigma E

We collected and analyzed literature data on ionic conductivity sigma and activation energy E A in the binary sodium silicate system in a wide composition range. The Anderson and Stuart model has been considered to describe the decreasing tendency of activation energy E A with alkali concentration in this system. In this analysis were considered experimental parameters, such as shear modulus G and relative dielectric permittivity epsilon. A general conductivity rule is found in 194 of 205 glasses, when one plots log sigma vs. E A/kB T, where kB is the Boltzmann constant and T is the absolute temperature. This fact means that the arrhenian relation has universal uniqueness of form sigma = sigma (E A,T) in wide Na2O composition range. The results also show that there is strong correlation by more than 19 orders of magnitude on conductivity with E A/kBT. An explanation for this behavior links ionic conductivity and microscopic structure. The problem of phase separation in this system is also considered.

Ionic Conduction Response under Extending-Deformation of β-AgI Thin Films

2018 ◽  
Vol 790 ◽  
pp. 3-8 ◽  
Author(s):  
Shin Ichi Furusawa ◽  
Tomosato Ida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Ionic Conductivity ◽  
Tensile Stress ◽  
Polyethylene Terephthalate ◽  
Ionic Conduction ◽  
Ion Conduction ◽  
Polyethylene Terephthalate Film ◽  
Extension Ratio

Tensile stress was applied to β-AgI thin film prepared on a polyethylene terephthalate film, and the ion conduction response in the direction of the tensile extension was investigated. The ionic conductivity of the β-AgI thin film decreases and the activation energy for ionic conduction increases with increasing extension ratio. This behaviour is attributed to the modulation of the crystal framework by the extension of the AgI thin film.

scholarly journals Synthesis and Characterisation of Structural and Electrical Properties of CuMn2O4 Spinel Compound

2021 ◽  
pp. 1-4
Author(s):  
Rasha Yousef ◽  
Alaa Nassif ◽  
Abla Al-Zoubi ◽  
Nasser Al-Din
Keyword(s):  
Activation Energy ◽  
Solid State ◽  
Electrical Properties ◽  
Optimum Temperature ◽  
Prepared Compound ◽  
Solid State Method ◽  
Structural And Electrical Properties ◽  
Cubic Structure ◽  
Experimental Density ◽  
Scherrer Method

CuMn2O4 was synthesized by the solid-state method. MnO2 and CuO were used as precursors. The optimum temperature of synthesis was 850°C. XRD results showed that the prepared compound had a cubic structure with Fd3 ̅m space group. The lattice constant and unit cell volume were a=8.359Å and V=584.14A°3 respectively. The grain size was calculated by the Debye-Scherrer method and was 33.49 nm for CuMn2O4 annealed at 850°C. The experimental density was calculated and compared to the theoretical density. The results were ρt= 5.399 gr/cm3 and ρE = 5.24 gr/cm3. The electrical properties of the compound showed that it behaves like a semiconductor, and the activation energy of the compound was 0.1535 eV. KEYWORDS Activation energy, copper manganite (CuMO), mixed oxide, solid-state reaction, spinel

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Synthesis and Ionic Conductivity of MAlSi3O8 (M = Li, Na, K)

2018 ◽  
Vol 790 ◽  
pp. 9-14
Author(s):  
Shin Ichi Furusawa ◽  
Yohei Minami
Keyword(s):  
Activation Energy ◽  
Ionic Conductivity ◽  
Ionic Radius ◽  
Ionic Conduction ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray

MAlSi3O8 (M = Li, Na, K) was synthesized by solid-phase reaction at 1000 °C using M2CO3 (M = Li, Na, K), Al2O3, and SiO2 as the starting materials, and its ionic conduction was studied in the temperature range 475–800 K. It was confirmed from powder X-ray diffraction profiles that the crystalline phases of the prepared MAlSi3O8 were the same as those of orthoclase. Moreover, the ionic conductivity of NaAlSi3O8 was about 10 times higher than that of LiAlSi3O8 and KAlSi3O8. The activation energies for ionic conduction were estimated to be in the range of 0.70–0.77 eV, with NaAlSi3O8 exhibiting the lowest activation energy. The result suggests that the magnitude of the activation energy cannot be determined only from the ionic radius.

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