Ionic Conduction Response under Extending-Deformation of β-AgI Thin Films

2018 ◽  
Vol 790 ◽  
pp. 3-8 ◽  
Author(s):  
Shin Ichi Furusawa ◽  
Tomosato Ida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Ionic Conductivity ◽  
Tensile Stress ◽  
Polyethylene Terephthalate ◽  
Ionic Conduction ◽  
Ion Conduction ◽  
Polyethylene Terephthalate Film ◽  
Extension Ratio

Tensile stress was applied to β-AgI thin film prepared on a polyethylene terephthalate film, and the ion conduction response in the direction of the tensile extension was investigated. The ionic conductivity of the β-AgI thin film decreases and the activation energy for ionic conduction increases with increasing extension ratio. This behaviour is attributed to the modulation of the crystal framework by the extension of the AgI thin film.

Dependence of Ionic Conductivity on the Thickness of β-AgI Thin Film Prepared on Polyethylene Terephthalate

2020 ◽  
Vol 38 ◽  
pp. 47-53
Author(s):  
Shin Ichi Furusawa ◽  
Yuuki Fukuda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionic Conductivity ◽  
Polyethylene Terephthalate ◽  
Crystal Orientation ◽  
Carrier Density ◽  
Structural Disorder ◽  
Thickness Dependence ◽  
Substrate Dependence ◽  
Ion Conducting

β-AgI thin films with thicknesses of 0.09–8.9 µm were prepared on polyethylene terephthalate (PET) substrate. Dependence of ionic conductivity on the thickness of the β-AgI thin film was measured via impedance spectroscopy in the temperature range of 300–330 K. It has been confirmed that the ionic conductivity of the b-AgI thin film is several hundred times higher than the b-AgI bulk. The enhancement of ionic conductivity is considered to be due to the formation of a high ion-conducting region near the hetero-interface region of b-AgI and PET. Furthermore, it has been suggested that the activation energy and carrier density may change depending on the distance from the interface, and the thickness dependence of enhancement in ionic conductivity may be related to the film thickness dependence of crystal orientation and structural disorder of β-AgI thin films.

Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

2014 ◽  
Vol 895 ◽  
pp. 41-44
Author(s):  
Seiw Yen Tho ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Water Contact ◽  
Pre Treatment ◽  
Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

2021 ◽  
Vol 317 ◽  
pp. 477-482
Author(s):  
Aris Doyan ◽  
Susilawati ◽  
Muhammad Taufik ◽  
Syamsul Hakim ◽  
Lalu Muliyadi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Optical Properties ◽  
Tin Oxide ◽  
Electronic Device ◽  
Film Material ◽  
Mass Percentage ◽  
Gap Energy ◽  
As Doping

Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

Experimental Study of the High Cycle Fatigue of Thin Film Metal on Polyethylene Terephthalate for Flexible Electronics Applications

2009 ◽  
Author(s):  
Khalid Alzoubi ◽  
Susan Lu ◽  
Bahgat Sammakia ◽  
Mark Poliks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Flexible Electronics ◽  
Electrical Resistance ◽  
Thermal Stresses ◽  
Electronic Systems ◽  
Total Width ◽  
Flexible Substrates ◽  
Polyethylene Naphthalate

Flexible electronics represent an emerging area in the electronics packaging and systems integration industry with the potential for new product development and commercialization in the near future. Manufacturing electronics on flexible substrates will produce low cost devices that are rugged, light, and flexible. However, electronic systems are vulnerable to failures caused by mechanical and thermal stresses. For electronic systems on flexible substrates repeated stresses below the ultimate tensile strength or even below the yield strength will cause failures in the thin films. It is known that mechanical properties of thin films are different from those of bulk materials; so, it is difficult to extrapolate bulk material properties on thin film materials. The objective of this work is to study the behavior of thin-film metal coated flexible substrates under high cyclic bending fatigue loading. Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are widely used substrates in the fabrication of microelectronic devices. Factors affecting the fatigue life of thin-film coated flexible substrates were studied, including thin film thickness, temperature, and humidity. A series of experiments for sputter-deposited copper on PET substrates were performed. Electrical resistance and crack growth rate were monitored during the experiments at specified time intervals. High magnification images were obtained to observe the crack initiation and propagation in the metal film. Statistical analysis based on design of experiments concepts was performed to identify the main factors and factor’s interaction that affect the life of a thin-film coated substrate. The results of the experiments showed that the crack starts in the middle of the sample and slowly grows toward the edges. Electrical resistance increases slightly during the test until the crack length covers about 90% of the total width of the sample where a dramatic increase in the resistance takes place.

Synthesis and Ionic Conductivity of MAlSi3O8 (M = Li, Na, K)

2018 ◽  
Vol 790 ◽  
pp. 9-14
Author(s):  
Shin Ichi Furusawa ◽  
Yohei Minami
Keyword(s):  
Activation Energy ◽  
Ionic Conductivity ◽  
Ionic Radius ◽  
Ionic Conduction ◽  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray

MAlSi3O8 (M = Li, Na, K) was synthesized by solid-phase reaction at 1000 °C using M2CO3 (M = Li, Na, K), Al2O3, and SiO2 as the starting materials, and its ionic conduction was studied in the temperature range 475–800 K. It was confirmed from powder X-ray diffraction profiles that the crystalline phases of the prepared MAlSi3O8 were the same as those of orthoclase. Moreover, the ionic conductivity of NaAlSi3O8 was about 10 times higher than that of LiAlSi3O8 and KAlSi3O8. The activation energies for ionic conduction were estimated to be in the range of 0.70–0.77 eV, with NaAlSi3O8 exhibiting the lowest activation energy. The result suggests that the magnitude of the activation energy cannot be determined only from the ionic radius.

Structural, Electrical and Optical Properties of Laser Deposited Thin Films of Srco0.8Fe0.2O3-δ

1994 ◽  
Vol 369 ◽  
Author(s):  
C. Zhang ◽  
H. Deng ◽  
J. Varon ◽  
B. Abeles ◽  
Y. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Optical Properties ◽  
Optical Absorption ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Thermally Activated ◽  
Characteristic Features

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.

Flame made nanoparticles permit processing of dense, flexible, Li+ conducting ceramic electrolyte thin films of cubic-Li7La3Zr2O12 (c-LLZO)

2016 ◽  
Vol 4 (33) ◽  
pp. 12947-12954 ◽  
Author(s):  
Eongyu Yi ◽  
Weimin Wang ◽  
John Kieffer ◽  
Richard M. Laine
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionic Conductivity ◽  
High Density ◽  
Conventional Casting ◽  
Ceramic Electrolyte

Conventional casting–sintering of flame made nanoparticles result in high density and ionic conductivity c-LLZO flexible thin film membranes.

Grain Growth by Digm in Ni Thin Film Under High Tensile Stress

1998 ◽  
Vol 516 ◽  
Author(s):  
Zhengyi Jia ◽  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Tensile Stress ◽  
Grain Growth ◽  
Experimental Result ◽  
Calculated Stress

AbstractElectron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.

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