Some Biassing Effects at the Electrode—Glass Interface

MRS Proceedings ◽

10.1557/proc-210-559 ◽

1990 ◽

Vol 210 ◽

Author(s):

Akira Doi

Keyword(s):

Bulk Properties ◽

Medium Interface ◽

Glass Interface ◽

Electrode Glass

AbstractInformations concerning electrical biassing effects on a medium are derived, usually, from the electrodes. Therefore, we frequently encounter phenomena which are peculiar to the electrode—medium interface(s), besides those due to bulk properties. In this report naive aspect on intrinsic biassing effects at the interfaces was presented first; then, as one of extrinsic origins, the mechanism of silver injection into glass from the silver anode was discussed.

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Electrochemical Corrosion of Electrodes in a Simulated Nuclear Waste Glass Melt

MRS Proceedings ◽

10.1557/proc-500-309 ◽

1997 ◽

Vol 500 ◽

Cited By ~ 3

Author(s):

S. K. Sundaram

Keyword(s):

Nuclear Waste ◽

Electrode Materials ◽

Electrochemical Corrosion ◽

Waste Glass ◽

Potential Candidate ◽

Corrosion Resistant ◽

Nuclear Waste Glass ◽

Glass Interface ◽

Electrode Glass ◽

Corrosion Data

ABSTRACTCorrosion of potential candidate electrode materials, molybdenum and tantalum, in a simulated nuclear waste glass melt was investigated using electrochemical (dc-powered) and non-powered tests. Electrochemical corrosion data showed that tantalum was more corrosion-resistant than molybdenum in this melt. Tantalum also showed passivation. The non-powered test data showed that tantalum corroded more than molybdenum. This was attributed to penetration of protective passivation layer at the tantalum-glass interface by the glass melt. Microstructural features and chemistry across selected electrode-glass interfacial regions supported these results.

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Atomistic Simulation Study of Controlled Nanostructure Patterning

MRS Proceedings ◽

10.1557/proc-775-p9.27 ◽

2003 ◽

Vol 775 ◽

Cited By ~ 1

Author(s):

Byeongchan Lee ◽

Kyeongjae Cho

Keyword(s):

Diffusion Barrier ◽

Atomistic Simulation ◽

Degrees Of Freedom ◽

Embedded Atom Method ◽

Surface Kinetics ◽

Bulk Properties ◽

Embedded Atom ◽

Kinetics Of ◽

Dissociation Barrier ◽

Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

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Basic Physics in Color-Coded EOS Metallization Failures (Differentiating between EOS and ESD)

10.31399/asm.cp.istfa1998p0143 ◽

1998 ◽

Author(s):

Leo G. Henry ◽

J.H. Mazur

Keyword(s):

Failure Analysis ◽

Light Microscope ◽

Structural Changes ◽

Surface Oxide ◽

Aluminum Surface ◽

Surrounding Area ◽

Die Surface ◽

Basic Physics ◽

Direct Contrast ◽

Glass Interface

Abstract The task of differentiating precisely between EOS and ESD failures continues to be a challenging one for Failure Analysis Engineers. Electrical OverStress (EOS) failures on the die surface (burnt/fused metallization) of an IC can be characterized mainly by the discoloration at the site of the failures. This is in direct contrast to the lack of discoloration characteristic of ESD failures, which occur almost exclusively below the die surface (oxide and junction failures). To aid in this distinction, this paper attempts to present the underlying physics behind the discoloration produced in the EOS failures. For the EOS failures, the metal fuses due to the longer pulse widths (sec to msec), while for the ESD failures, the silicon melts because of the shorter pulse widths (< < 500 nsec) and higher energy. After EOS, the aluminum surface becomes dark and rough and the oxide in the surrounding area becomes deformed and distorted, resulting in the discoloration observed in the light microscope. This EOS discoloration could be due to one or more of the following: 1) morphological and structural changes at the metal/glass interface and the glass itself; 2) changes in the thickness and scattering behavior of the glass and metal in the failed areas.

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