Automatic Determination of In-Depth Profiles of Recombination Lifetime in Epitaxial Si Layer with P+-N−-N+ Stripe Test Pattern Diodes

1991 ◽  
Vol 225 ◽  
Author(s):  
Akira Usami ◽  
Yoshimaro Fujii ◽  
Hideki Fujiwara ◽  
Tomiyasu Sone ◽  
Takao Wada
Keyword(s):  
Buffer Layer ◽  
Test Pattern ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recombination Lifetime ◽  
Depth Profiles ◽  
Current Voltage ◽  
Photo Response

ABSTRACTRecombination lifetime of a epitaxial layer (epilayer) is automatically measured by using the conductivity modulation technique. A lateral p+-n−-n+ diode test structure on the surface of the epilayer is formed to evaluate the minority carrier lifetime. Depth profiles of the recombination lifetime are obtained from current-voltage curves of a lateral p+-n−-n+ diode and a vertical n+-n−-n+ structure between the substrate and the top surface. We measure the lifetime in epilayers with and without a buffer-layer. In addition, photo-response of photodiodes with and without the buffer-layer is measured. Profiles of the recombination lifetime depend on the thickness of the epilayer but not on the thickness of the buffer-layer. Minority carrier lifetime in the epilayer, and the leakage current and the photo-response of photodiodes are improved by the buffer-layer formation between epilayer and substrate.

The Extraction of Minority Carrier Lifetime from the Current-Voltage Characteristics of Si/Si1−xGex Devices

1991 ◽  
Vol 220 ◽  
Author(s):  
T. Ghani ◽  
J. L. Hoyt ◽  
D. B. Noble ◽  
J. F. Gibbons ◽  
J. E. Turner ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Electrical Measurements ◽  
Active Device ◽  
Strained Layers ◽  
Recombination Lifetime ◽  
Maximum Lifetime ◽  
Current Voltage ◽  
Current Characteristics

ABSTRACTThe extraction of recombination lifetime from the current-vol tage characteristics of diode structures containing Si1−xGex strained layers is discussed. Electrical measurements are used in conjunction with computer simulations to extract minority carrier lifetime in Si1−xGex layers with various oxygen concentrations. The minority carrier lifetime in Si1−xGex increases from several psec at an oxygen concentration of 2×1020 cm−3, to greater than 0.5 μs at concentrations below 3×1017 cm−3. The structures are analyzed for sensitivity of the current characteristics to Si1−xGex minority carrier lifetime. Calculations predict that the maximum lifetime which can be extracted from such structures is greater than 100 μsec. However, due to limitations imposed by perimeter currents, the maximum lifetime which can be extracted from our diode structures is on the order of 3 μsec. Maximizing area to perimeter ratio of the diode structures and moving the Si1−xGex-SiO2 interface away from the active device region is required in order to increase the maximum extracted lifetime from such structures.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method

2018 ◽  
Vol 39 (4) ◽  
pp. 552-555 ◽  
Author(s):  
Maitreya Dutta ◽  
Saptarshi Mandal ◽  
Raghuraj Hathwar ◽  
Alec M. Fischer ◽  
Franz A. M. Koeck ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recovery Method

scholarly journals Study of Photoluminescence Decay by Time-correlated Single Photon Counting for the Determination of the Minority-carrier Lifetime in Silicon

2014 ◽  
Vol 55 ◽  
pp. 121-127 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Alexandru Focsa ◽  
Bachir Semmache ◽  
Erwann Picard ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Photon ◽  
Photon Counting ◽  
Minority Carrier Lifetime ◽  
Single Photon Counting ◽  
Photoluminescence Decay

Experimental determination of minority‐carrier lifetime and recombination mechanisms inp‐type Hg1−xCdxTe

1981 ◽  
Vol 52 (8) ◽  
pp. 5182-5194 ◽  
Author(s):  
D. L. Polla ◽  
S. P. Tobin ◽  
M. B. Reine ◽  
A. K. Sood
Keyword(s):  
Experimental Determination ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

scholarly journals Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods

2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Jialin Wang ◽  
Chaoqun Wang ◽  
Can Liu ◽  
Kaiyun Pi ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Photodetector Array ◽  
Photovoltaic Detectors ◽  
Recovery Technique ◽  
Small Resistance ◽  
Parallel Resistance

This paper presents experiment measurements of minority carrier lifetime using three different methods including modified open-circuit voltage decay (PIOCVD) method, small parallel resistance (SPR) method, and pulse recovery technique (PRT) onpnjunction photodiode of the HgCdTe photodetector array. The measurements are done at the temperature of operation near 77 K. A saturation constant background light and a small resistance paralleled with the photodiode are used to minimize the influence of the effect of junction capacitance and resistance on the minority carrier lifetime extraction in the PIOCVD and SPR measurements, respectively. The minority carrier lifetime obtained using the two methods is distributed from 18 to 407 ns and from 0.7 to 110 ns for the different Cd compositions. The minority carrier lifetime extracted from the traditional PRT measurement is found in the range of 4 to 20 ns forx=0.231–0.4186. From the results, it can be concluded that the minority carrier lifetime becomes longer with the increase of Cd composition and the pixels dimensional area.

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