Photoelectric Emission Studies from Crystalline Silicon at 266 Nm
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ABSTRACTThree different photoelectric regimes are observed in the interaction of 15 ps, 266 nm laser pulses with crystalline silicon samples versus light fluence. A superposition of linear and quadratic photoionization is followed by a space charge limited regime up to the critical fluence F4ωth for the surface amorphization where highly nonlinear ion emission is observed. Ion and electron emissions become equal in magnitude at a fluence - ∼ 2F4ωth The absence of observable thermionic effects indicates that thermal equilibrium of the electronhole plasma and the lattice is reached during the laser pulse duration.