Effects of Heating Samples on the Extended Defect Generation During Pulsed Electron Beam Annealing of Silicon

ABSTRACTA non destructive SEM observation method has been applied to investigate the extended defects created by pulsed electron beam annealing of arsenic–implanted silicon. The defect study was performed on bevelled samples after irradiation using variable beam fluences for both a 20°C or a 450°C specimen starting temperature. Dislocation generation resulting in subgrain boundaries formation occurs during regrowth of the silicon layer which has been heated up to the melt point or higher. For the rather penetrating electron beam pulse used in this work the subgrain size and their depth extent depend on the beam fluence and the substrate temperature. For 450°C pre‐heated samples, annealing of the arsenic implant is possible without any stable extended defect creation using the 1.0 – 1.2 J.cm−2 fluence range.

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Pulsed Electron Beam Annealing Induced Deep Level Defects in Virgin Silicon

MRS Proceedings ◽

10.1557/proc-13-449 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 1

Author(s):

D. Barbier ◽

M. Kechouane ◽

A. Chantre ◽

A. Laugier

Keyword(s):

Electron Beam ◽

Thermal Stresses ◽

Deep Level ◽

Broad Band ◽

Extended Defects ◽

Molten Layer ◽

Pulsed Electron Beam ◽

Boron Doped ◽

Most Probable Explanation ◽

Trap Levels

ABSTRACTDLTS has been used to investigate deep level defects induced by Pulsed Electron Beam Annealing (PEBA) in virgin (100) boron doped silicon. Various PEBA conditions were selected resulting in different molten layer thicknesses, melt front velocities and thermal gradient distributions. Discrete hole traps distributed in the regrowth layer were observed in all the annealed samples. The activation energies and thermal signatures of these levels do not correspond to already known defects except for one level which has been assigned to the carbon interstitial substitutional pair. Carbon contamination during irradiation is the most probable explanation for the creation of this defect. Other discrete hole trap levels are likely to be generated by quenching of the molten layer as far as their profiles do not extend beyond the regrowth layer. Moreover, a broad band of levels, characteristic of extended defects, has been observed only on the samples which have suffererd the highest thermal stresses. This band of levels might be related to the generation of dislocation networks as recently observed by means of T.E.M. on the same PEBA processed samples.

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From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.321 ◽

2020 ◽

Vol 1004 ◽

pp. 321-327

Author(s):

Robert Leonard ◽

Matthew Conrad ◽

Edward Van Brunt ◽

Jeffrey Giles ◽

Ed Hutchins ◽

...

Keyword(s):

Large Diameter ◽

Extended Defects ◽

Volume Data ◽

Deep Convolutional Neural Networks ◽

Data Set ◽

Extended Defect ◽

Selective Etch ◽

Edge Dislocations ◽

Non Destructive

A non-destructive, fast and accurate extended defect counting method on large diameter SiC wafers is presented. Photoluminescence (PL) signals from extended defects on 4H-SiC substrates were correlated to the specific etch features of Basal Plane Dislocations (BPDs), Threading Screw Dislocations (TSDs), and Threading Edge Dislocations (TED). For our non-destructive technique (NDT), automated defect detection was developed using modern deep convolutional neural networks (DCNN). To train a robust network, we used our large volume data set from our selective etch method of 4H-SiC substrates, already established based on definitive correlations to Synchrotron X-Ray Topography (SXRT) [1]. The defect locations, classifications and counts determined by our DCNN correlate with the subsequently etch-delineated features and counts. Once our network is sufficiently trained we will no longer need destructive methods to characterize extended defects in 4H-SiC substrates.

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Electron beam induced current study of thin silicon layers on insulator substrate

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176228 ◽

1990 ◽

Vol 48 (4) ◽

pp. 618-619

Author(s):

A. Buczkowski ◽

Z. J. Radzimski ◽

J. C. Russ ◽

G. A. Rozgonyi

Keyword(s):

Electron Beam ◽

Energy Loss ◽

Beam Energy ◽

Collection Efficiency ◽

Silicon Layer ◽

Depletion Layer ◽

Incident Electron Energy ◽

Induced Current ◽

Electron Hole ◽

Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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