Effect of Intermediate Thermal Processing on Microstructural Changes of Oxygen Implanted Silicon-on-Insulator Material

1991 ◽  
Vol 235 ◽  
Author(s):  
J. D. Lee ◽  
J. C. Park ◽  
S. J. Krause ◽  
P. Roitman ◽  
M. K. El-Ghor
Keyword(s):  
Thermal Processing ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Ramp Rate ◽  
Microstructural Changes ◽  
Transmission Electron ◽  
Final Microstructure ◽  
Processing Steps ◽  
Very High ◽  
Material Form

ABSTRACTThe microstructural changes in oxygen implanted silicon-on-insulator material (SIMOX) at intermediate annealing steps and the changes by rapid thermal annealing (RTA) were studied with transmission electron microscopy. Defects found in as-implanted SIMOX, including multiply faulted defects, short stacking faults, and {113} defects, were all removed in anneals from 900°C to 1100°C. The threading dislocations in annealed material form at these temperatures during thermal ramping. RTA shows that the microstructure is significantly influenced by the ramp rate. The very high ramp rate in RTA results in very flat interfaces and a buried oxide layer with no Si islands, but significantly increases the defect density. Overall, the results show that intermediate thermal processing steps strongly affect the final microstructure of SIMOX material.

Effects of Nonmelt Laser Annealing on a 5keV Boron Implant in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Susan Earles ◽  
Mark Law ◽  
Kevin Jones ◽  
Rich Brindos ◽  
omit Talwar
Keyword(s):  
Thermal Processing ◽  
Laser Annealing ◽  
Defect Density ◽  
Ramp Rate ◽  
Rapid Thermal Anneal ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Post Annealing ◽  
Laser Anneal ◽  
Laser Thermal Processing

AbstractTo investigate the effects of ramp rate on the transient enhanced diffusion of boron in silicon, laser thermal processing (LTP) in the nonmelt regime has been investigated. A nonmelt laser anneal has been performed on a 5 keV, 1e15 boron implant. The implant energy of 5keV was chosen to simplify analysis. A rapid thermal anneal (RTA) at 1000°C and furnace anneals at 750 °C were used to show the effect of post annealing on the LTPd samples. Results show the sheet resistance drops by up to a factor of two for samples receiving the nonmelt LTP and the RTA compared with the samples just receiving the RTA. An increase in the hall mobility was also observed for the samples receiving the LTP. The nonmelt LTP was also shown to strongly affect the extended defect density. During post anneals, a higher density of smaller defects evolved in the samples receiving the LTP.

Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material

1993 ◽  
Vol 316 ◽  
Author(s):  
J.D. Lee ◽  
J.C. Park ◽  
D. Venables ◽  
S.J. Krause ◽  
P. Roitman
Keyword(s):  
Defect Density ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
High Dose ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Density Reduction ◽  
Transmission Electron ◽  
Pair Density

ABSTRACTDefect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

Integration of Semiconductor and Magnetic Bubble Devices: Soi on Garnet

1985 ◽  
Vol 53 ◽  
Author(s):  
D.W. Greve ◽  
M.H. Kryder ◽  
P.H.L. Rasky
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
Magnetic Bubble ◽  
Multiple Detectors ◽  
Processing Steps ◽  
Soi Technology ◽  
Very High ◽  
Logic Level

ABSTRACTSilicon on insulator (SOI) technology makes it possible to fabricate semiconductor devices on foreign substrates. In this paper, we present results for a process in which fieldeffect transistors are fabricated in recrystallized polysilicon on a magnetic bubble substrate. We report on the characteristics of the field effect transistors and the effect of the necessary processing steps on the magnetic properties of the substrate. A memory constructed in this hybrid technology would have very high density, multiple detectors for high speed, and direct logic level outputs.

Effect of Thermal ramping rate on defect formation in oxygen-implanted silicon-on-insulator material

1992 ◽  
Vol 50 (2) ◽  
pp. 1400-1401
Author(s):  
Ju-Chul Park ◽  
Stephen Krause ◽  
Mohammed El-Ghor
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Defect Formation ◽  
Semiconductor Device ◽  
Defect Density ◽  
Silicon On Insulator ◽  
High Dose ◽  
Ramp Rate ◽  
Rapid Thermal Anneal ◽  
Temperature Capability

Integrated circuits on SIMOX (Separation by IMplantation of OXygen) have higher speed, radiation hardness, and higher temperature capability. Defects in the top Si layer inhibit bipolar applications and may affect CMOS(Complementary Metal-On-Semiconductor) device yield, operation and reliability. As-implanted SIMOX has many types of defects, including short stacking faults(SFs), multiply faulted defects(MFDs), and {113} defects. In annealed SIMOX, new defects form during the ramping cycle. The effect of thermal ramping rate on the development of new defects has received only limited study. In this work, the effects of rapid thermal annealing(RTA) and thermal ramp rate on defect density and structural change were studied.Two set of samples were prepared with different oxygen doses. First, one set of (100) Si wafers was implanted with a high dose of 1.8×l018cm−2 at 200 KeV at 620°C. A rapid thermal anneal(RTA) wafer was obtained from a lamp anneal for 1 minute at 1320°C using a ramp rate of 50°C/sec. A portion of this sample was then conventionally annealed in a tube furnace for 5 hours at 1320°C. Another set of (100) Si wafers was implanted with a low dose of 3×l015cm−2 at 25°C. Different samples were then annealed at 1250°C for 30 sec using three ramp rates of 50°C/sec, l°C/sec and 0.1°C/sec. Cross-sections of the samples were studied with conventional transmission electron microscopy (CTEM) at 200 KeV.

Feasibility of Simox Material Quality Determination Using Spectroellipsometry: Comparison With Raman And Planar View Transmission Electron Microscopy

1991 ◽  
Vol 235 ◽  
Author(s):  
G. M. Crean ◽  
S. Lyncrt ◽  
R. Greef ◽  
J. Stoemenos ◽  
U. Rossow ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Response Model ◽  
Density Measurements ◽  
Substrate Quality ◽  
Transmission Electron

ABSTRACTOne of the most promising silicon on insulator (SOI) fabrication techniques under development is Separation by IMplanted OXygen (SIMOX) substrates. The objective of this paper is to evaluate the feasability of employing spectroscopic ellipsometry (SE) for the determination of SIMOX substrate quality. Defect density measurements obtained from planar view transmission electron microscopy (TEM) studies are presented and concur with the Raman experimental results. The need for the development of a more sophisticated ellipsometric optical response model to mirror the complexity of the annealed Si overlayer microstructure is demonstrated.

Formation of Silicon on Insulator Structures By Implanted Nitrogen

1985 ◽  
Vol 53 ◽  
Author(s):  
L. Nesbit ◽  
S. Stiffler ◽  
G. Slusser ◽  
H. Vinton
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mass Spectroscopy ◽  
Silicon Wafers ◽  
Silicon On Insulator ◽  
High Dose ◽  
Secondary Ion Mass Spectroscopy ◽  
Transmission Electron ◽  
Final Microstructure ◽  
Secondary Ion

ABSTRACTThe formation of a silicon-on-insulator (SOI) structure by implanting a high dose of N+ ions to form a buried Si3N4 layer is studied by transmission electron microscopy (TEM) and by secondary ion mass spectroscopy (SIMS). The SOI structure is formed by implanting silicon wafers with 7.5x1017 N+ ions/cm2 at 160 keV and at wafer temperatures of 400, 500, or 600°C. The implanted wafers are subsequently annealed at 1200°C for times ranging from 10 minutes to 2 hours. The microstructures and nitrogen distributions of the asimplanted and post-annealed wafers are examined in order to elucidate the development of the final microstructure.

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

1998 ◽  
Vol 537 ◽  
Author(s):  
Zhigang Mao ◽  
Stuart McKernan ◽  
C. Barry Carter ◽  
Wei Yang ◽  
Scott A. McPherson
Keyword(s):  
Seed Layer ◽  
Defect Density ◽  
Interface Plane ◽  
Lateral Growth ◽  
Promising Technique ◽  
Seeding Layer ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Quality Material ◽  
Very High

AbstractSelective lateral growth of GaN is a promising technique for producing high quality material for microelectronic and optoelectronic devices. Single-crystal GaN/AIN layers have been grown on Si(111) substrates and subsequently used as the seeding layer for selective lateral overgrowth. GaN pyramids are formed above holes patterned in a Si3N4 mask. Transmission electron microscopy (TEM, which also denotes the microscope) of these structures shows that the GaN pyramid, GaN seed layer, and AIN buffer layer in the samples have the following epitactic relationship with respect to the Si substrate: [1120]GaN || [1120]AIN || [110]Si and (0001)GaN || (0001)AIN || (111)Si. In the core of the pyramid (at or above the seed windows), dislocations thread through the pyramid perpendicular to the interface plane with very high density. Some of these threading dislocations, which originate from the GaN/AIN seed layer, form 90° bends and half loops at the edge of the pyramid core. In the lateral growth part of the GaN pyramid, the dislocation density is relatively low. The majority of dislocations thread through the pyramid parallel to the interface plane. Planar defects, usually parallel to the interface plane, were observed near the interface. The defect density decreases with the distance away from the interface, so that the top several microns of material maybe completely defect free. The mechanism of the growth of GaN pyramids is discussed and related to this defect structure.

Phenomena Associated with Oxygen in Titanium

1967 ◽  
Vol 25 ◽  
pp. 310-311
Author(s):  
E. U. Lee ◽  
P. A. Garner ◽  
J. S. Owens
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Microstructural Changes ◽  
Electrolytic Polishing ◽  
Interstitial Impurities ◽  
Thin Foils ◽  
Transmission Electron ◽  
Iodide Titanium ◽  
Alpha Titanium

Evidence for ordering (1-6) of interstitial impurities (O and C) has been obtained in b.c.c. metals, such as niobium and tantalum. In this paper we report the atomic and microstructural changes in an oxygenated c.p.h. metal (alpha titanium) as observed by transmission electron microscopy and diffraction.Oxygen was introduced into zone-refined iodide titanium sheets of 0.005 in. thickness in an atmosphere of oxygen and argon at 650°C, homogenized at 800°C and furnace-cooled in argon. Subsequently, thin foils were prepared by electrolytic polishing and examined in a JEM-7 electron microscope, operated at 100 KV.

Reduction of Specimen Contamination in Electron-Beam Instruments

1976 ◽  
Vol 34 ◽  
pp. 576-577
Author(s):  
G. Lehmpfuhl ◽  
P. J. Smith
Keyword(s):  
Electron Beam ◽  
Cold Trap ◽  
Beam Diameter ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Hydrocarbon Molecules ◽  
Electron Microscopes ◽  
Combination Of Methods ◽  
Convergent Beam ◽  
Very High

Specimens being observed with electron-beam instruments are subject to contamination, which is due to polymerization of hydrocarbon molecules by the beam. This effect becomes more important as the size of the beam is reduced. In convergent-beam studies with a beam diameter of 100 Å, contamination was observed to grow on samples at very high rates. Within a few seconds needles began forming under the beam on both the top and the underside of the sample, at growth rates of 400-500 Å/s, severely limiting the time available for observation. Such contamination could cause serious difficulty in examining a sample with the new scanning transmission electron microscopes, in which the beam is focused to a few angstroms.We have been able to reduce the rate of contamination buildup by a combination of methods: placing an anticontamination cold trap in the sample region, preheating the sample before observation, and irradiating the sample with a large beam before observing it with a small beam.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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