XPS Investigation of Ion Implanted PMMA

1991 ◽  
Vol 235 ◽  
Author(s):  
R. Kallweit ◽  
U. Roll ◽  
H. Strack ◽  
A. Pocker
Keyword(s):  
Chemical Modification ◽  
Energy Dependence ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Beam Current ◽  
Ion Energy ◽  
X Ray ◽  
Constant Dose ◽  
Energy Dependent

ABSTRACTDuring ion bombardment, polymethylmethacrylate (PMMA) shows degassing of polymer components with a fluence and energy dependent contraction of the material, which leads to a material modification.The ion beam induced chemical modification of the implanted layers was examined by means of X-ray photoelectron spectroscopy (XPS). The dependence of the chemical modification on beam current, ion fluence and ion energy was investigated for nitrogen implantations at energies ranging from 50 keV to 400 keV for ion fluences between 7×1013 / cm2 and 7×1015/cm2. Compared with the C-spectrum of virgin PMMA, the spectra of the implanted layers exhibited an increase of intensity of the 284.5 eV peak and the 286.4 eV peak. The ion beam induced modification led basically to generation of new C-o-groups. These generations show drastical changes in the dependence of the beam current and the ion fluence. Nevertheless, at a constant dose of 2×1014/cm2 the concentrations of the new groups did not indicate any energy dependence.

X-Ray Photoelectron Spectroscopy Investigation of the Interaction of NF3 with Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
T. W. Little ◽  
F. S. Ohuchi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Plasma Processing ◽  
Ion Bombardment ◽  
Nitrogen Trifluoride ◽  
X Ray ◽  
Controlled Conditions

AbstractThe interaction of nitrogen trifluoride (NF3) with silicon (Si) surfaces has been investigated by x-ray photoelectron spectroscopy (XPS). Si (100) surfaces were subjected to NF3 ion bombardment as a means of approximating plasma processing under controlled conditions. Samples were also exposed to actual NF3 DC plasmas and the results compared to ion beam and plasma processing using nitrogen (N2). The results indicate that nitridation of silicon is possible using NF3 although it seems to be limited by simultaneous etching. Additionally, results suggest bonding between both Si-F and Si-N species and perhaps F-N-Si moieties. NF3 plasma processing has lead to curious results for F 1s spectra which are not fully understood at present.

Al / Al-N / Ain Compositional Gradient Film Synthesized by Ion-Beam Assisted Deposition Method

1996 ◽  
Vol 438 ◽  
Author(s):  
Yoshiki Amamoto ◽  
Shingo Uchiyama ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Beam Current ◽  
Deposition Method ◽  
Si Substrate ◽  
Compositional Gradient ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
The Cross

AbstractAl / AI-N / AIN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AIN variation in composition was shown by the change of the Al / N atomic ratio analysed by the energy dispersive X-ray spectroscopy(EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AIN ceramic layer on the Si substrate was revealed by X-ray diffraction(XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline AI-N ceramic material and the flat interface between the Si substrate and the AIN film.

X-Ray Photoelectron Spectroscopy Investigation of the Interaction of NF3 with Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
T. W. Little ◽  
F. S. Ohuchi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Plasma Processing ◽  
Ion Bombardment ◽  
Nitrogen Trifluoride ◽  
X Ray ◽  
Controlled Conditions

AbstractThe interaction of nitrogen trifluoride (NF3) with silicon (Si) surfaces has been investigated by x-ray photoelectron spectroscopy (XPS). Si (100) surfaces were subjected to NF3 ion bombardment as a means of approximating plasma processing under controlled conditions. Samples were also exposed to actual NF3 DC plasmas and the results compared to ion beam and plasma processing using nitrogen (N2). The results indicate that nitridation of silicon is possible using NF3 although it seems to be limited by simultaneous etching. Additionally, results suggest bonding between both Si-F and Si-N species and perhaps F-N-Si moieties. NF3 plasma processing has lead to curious results for F ls spectra which are not fully understood at present.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Effects of ion beam bombardment on electrochromic tungsten oxide films studied by X-ray photoelectron spectroscopy and Rutherford back-scattering

2000 ◽  
Vol 376 (1-2) ◽  
pp. 131-139 ◽  
Author(s):  
H.Y. Wong ◽  
C.W. Ong ◽  
R.W.M. Kwok ◽  
K.W. Wong ◽  
S.P. Wong ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Oxide Films ◽  
Rutherford Back Scattering ◽  
X Ray ◽  
Back Scattering

Ion Bombardment Effect on the Hardness of Ti(C,N,O) Films Prepared by Ion Beam Controlled Deposition (IBCD)

1992 ◽  
Vol 279 ◽  
Author(s):  
Chen Youshan ◽  
Sun Yilin ◽  
Zhang Fumin ◽  
Mou Haichuan ◽  
Tao Wei ◽  
...  
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Advanced Technology ◽  
Preferential Growth ◽  
Ion Energy ◽  
Lattice Constants ◽  
Film Hardness ◽  
Pure Compounds ◽  
Controlled Deposition

Ion beam controlled deposition (IBCD) or ion beam assisted deposition (IB AD) of Ti(C,N,O) films has been investigated much in the last decade for both the advantage of this advanced technology and the promising properties of such materials. Ti(C,N,O) films are various solid solutions of interstitial compounds TiC, TiN and TiO of F.C.C structure with lattice constants lying between the values of the pure compounds. Some content of oxygen improves their wear resistance due to the lower fn;e enthalpies of such films in comparison with pure TiC and TiN films [1]. Many so-synthesizcd titanium carbide and titanium nitride films reported in published papers were actually of this sort as they often had more or less oxygen content from residual gas in vacuum. A number of papers were contributed to depict the texture and composition dependence of film on the arrival ratio of assisting ions versus deposited atoms (AR) as well as their mechanical properties [2–6]. However, the film formation mechanism in IBCD isn't quite clear yet, especially for cases with assisting ion energy of several to tens of keV. During a course to synthesize Ti(C,N,O) films by IBCD with the two beam technique, datum were accumulated. Based on a part of it, a previous paper on ion beam governed preferential growth in IBCD has been published [7]. This paper was aimed to search for the origin of ion bombardment effect on film hardness.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

In situ analysis of Si(100) surface damage induced by low-energy rare-gas ion bombardment using x-ray photoelectron spectroscopy

1997 ◽  
Vol 15 (3) ◽  
pp. 820-824 ◽  
Author(s):  
Masahiko Ishii ◽  
Yoshiharu Hirose ◽  
Toshikazu Sato ◽  
Takeshi Ohwaki ◽  
Yasunori Taga
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Bombardment ◽  
Surface Damage ◽  
Low Energy ◽  
In Situ Analysis ◽  
Rare Gas ◽  
X Ray

EFFECT OF ION-ENERGY ON THE PROPERTIES OF AMORPHOUS GaN FILMS PRODUCED BY ION-ASSISTED DEPOSITION

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1355-1360 ◽  
Author(s):  
UDAY LANKE ◽  
ANNETTE KOO ◽  
SIMON GRANVILLE ◽  
JOE TRODAHL ◽  
ANDREAS MARKWITZ ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Thermal Evaporation ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Nuclear Reaction Analysis ◽  
Ion Energy ◽  
X Ray ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies 40 eV and 90 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN . The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

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